IRFPE30PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRFPE30PBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总8页 (文件大小:1765K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-95716
IRFPE30PbF
Lead-Free
www.irf.com
1
8/3/04
IRFPE30PbF
2
www.irf.com
IRFPE30PbF
www.irf.com
3
IRFPE30PbF
4
www.irf.com
IRFPE30PbF
www.irf.com
5
IRFPE30PbF
6
www.irf.com
IRFPE30PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For N Channel HEXFETS
www.irf.com
7
IRFPE30PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
035H
57
AS SEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
56
DAT E CODE
YEAR 0 = 2000
WEE K 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/04
8
www.irf.com
相关型号:
IRFPE450
TRANSISTOR 5.4 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power
VISHAY
IRFPE450PBF
TRANSISTOR 5.4 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
VISHAY
IRFPE50-201
Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247, 3 PIN
VISHAY
IRFPE50-201PBF
Power Field-Effect Transistor, 7.8A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明