IRFR13N15DPBF_15 [INFINEON]
High frequency DC-DC converters;
| 型号： | IRFR13N15DPBF_15 |
| 厂家： | 
Infineon |
| 描述： | High frequency DC-DC converters |
| 文件： | 总11页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95549A
IRFR13N15DPbF
IRFU13N15DPbF
HEXFET® Power MOSFET
SMPS MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
150V
RDS(on) max
ID
14A
0.18Ω
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR13N15D
I-Pak
IRFU13N15D
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
14
9.8
56
A
PD @TC = 25°C
Power Dissipation
86
W
W/°C
V
Linear Derating Factor
0.57
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
3.8
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Typical SMPS Topologies
l Telecom 48V input Active Clamp Forward Converter
Notes through ꢀare on page 10
www.irf.com
1
12/9/04
IRFR/U13N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.18
3.0 ––– 5.5
Ω
V
VGS = 10V, ID = 8.3A
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
V
DS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
GS = 30V
VGS = -30V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
IGSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
5.0 ––– –––
––– 19 29
5.5 8.2
9.4 14
Conditions
gfs
S
VDS = 50V, ID = 8.3A
ID = 8.3A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
nC VDS = 120V
VGS = 10V,
VDD = 75V
8.0 –––
26 –––
12 –––
11 –––
ID = 8.3A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 11Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 620 –––
––– 130 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 780 –––
––– 62 –––
––– 110 –––
38 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
–––
Max.
130
8.3
Units
mJ
EAS
IAR
A
EAR
Repetitive Avalanche Energy
8.6
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.75
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
14
56
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 110 –––
––– 520 –––
V
TJ = 25°C, IS = 8.3A, VGS = 0V
ns
TJ = 25°C, IF = 8.3A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U13N15DPbF
100
10
1
100
10
VGS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
BOTTOM 5.0V
BOTTOM 5.0V
1
5.0V
5.0V
0.1
20µs PULSE WIDTH
T = 175 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
0.01
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
14A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5
6
7
8
9
10
11
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U13N15DPbF
20
16
12
8
10000
I
D
= 8.3A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 120V
= 75V
= 30V
C
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
10
100
1000
0
V
, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U13N15DPbF
RD
14
12
10
8
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
V
DS
2
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U13N15DPbF
240
200
160
120
80
15V
I
D
TOP
3.4A
5.9A
BOTTOM 8.3A
DRIVER
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
40
V
(BR)DSS
0
t
25
50
75
100
125
150
175
p
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U13N15DPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U13N15DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MB LY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 9 = 1999
WEE K 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
AS S E MB L Y
LOT CODE
indicates "Lead-F ree"
OR
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 16
A = AS S E MB L Y S IT E CODE
8
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IRFR/U13N15DPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S E MB LY
DATE CODE
YEAR 9 = 1999
WEE K 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
ASS EMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
pos iti on indicates "Lead-F ree"
OR
PART NUMBER
DAT E CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
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9
IRFR/U13N15DPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Starting TJ = 25°C, L = 3.8mH
RG = 25Ω, IAS = 8.3A.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 8.3A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
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TAC Fax: (310) 252-7903
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10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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INFINEON
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