IRFR24N15DPBF [INFINEON]
HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET
| 型号： | IRFR24N15DPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢Power MOSFET |
| 文件： | 总11页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95370A
IRFR24N15DPbF
IRFU24N15DPbF
HEXFET® Power MOSFET
SMPS MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
150V
RDS(on) max
ID
24A
95mΩ
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR24N15D
I-Pak
IRFU24N15D
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
24
17
A
96
PD @TC = 25°C
Power Dissipation
140
W
W/°C
V
Linear Derating Factor
0.92
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
4.9
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.1
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
Notes through ꢀare on page 10
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1
1/17/05
IRFR/U24N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
82
95
mΩ VGS = 10V, ID = 14A
––– 5.0
V
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 14A
ID = 14A
gfs
8.2
–––
–––
–––
–––
–––
–––
–––
––– –––
S
Qg
30
7.4
17
45
11
26
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 120V
VGS = 10V,
VDD = 75V
11 –––
53 –––
19 –––
15 –––
ID = 14A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 890 –––
––– 220 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 1460 –––
––– 95 –––
––– 200 –––
46 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
170
14
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
14
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
24
96
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 110 –––
––– 450 –––
V
TJ = 25°C, IS = 14A, VGS = 0V
ns
TJ = 25°C, IF = 14A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U24N15DPbF
100
10
1
1000
100
10
VGS
15V
12V
VGS
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
1
5.0V
5.0V
0.1
0.01
0.001
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100
24A
=
I
D
°
T = 175
C
J
2.5
2.0
1.5
1.0
0.5
0.0
10
1
°
T = 25
J
C
V
= 50V
DS
V
= 10V
GS
20µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4
6
8
10
12 14
16
T , Junction Temperature
(
C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U24N15DPbF
12
10
8
10000
I
= 14A
V
= 0V,
f = 1 MHZ
D
V
V
V
= 120V
= 75V
= 30V
GS
DS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
6
Coss
Crss
4
2
0
1
10
100
1000
0
5
10
15
20
25
30
35
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175
J
C
10
100µsec
°
T = 25
C
J
1msec
1
1
Tc = 25°C
Tj = 175°C
10msec
Single Pulse
V
= 0 V
GS
2.0
0.1
0.1
0.0
0.5
1.0
1.5
2.5
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U24N15DPbF
RD
25
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
SINGLE PULSE
0.02
t
2
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U24N15DPbF
320
240
160
80
15V
I
D
TOP
5.9A
10A
14A
BOTTOM
DRIVER
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
0
t
25
50
75
100
125
°
( C)
150
175
p
Starting Tj, Junction Temperature
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U24N15DPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U24N15DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
PART NUMBER
WIT H AS S EMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
ASSEMBLY
LOT CODE
indicates "Lead-F ree"
OR
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WEE K 16
A = AS S E MB L Y S IT E CODE
8
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IRFR/U24N15DPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WITH ASSEMBLY
DAT E CODE
YEAR 9 = 1999
WEEK 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
ASSEMBLED ON WW 19, 1999
IN THE ASSEMBLYLINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
Note : "P" in assembly line
pos ition indicates "L ead-F ree"
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE E K 19
A = AS S E MB L Y S I T E CODE
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9
IRFR/U24N15DPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 1.7mH
RG = 25Ω, IAS = 14A.
as Coss while VDS is rising from 0 to 80% VDSS
.
ISD ≤ 14A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/05
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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