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IRFR3410TRLPBF [INFINEON]

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IRFR3410TRLPBF
型号： IRFR3410TRLPBF
厂家： Infineon    Infineon
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晶体 晶体管 功率场效应晶体管 开关 脉冲
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PD - 94505  
IRFR3410  
IRFU3410  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
100V  
RDS(on) max  
ID  
31A  
†
39mΩ  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR3410  
I-Pak  
IRFU3410  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
VDS  
Drain-Source Voltage  
100  
V
VGS  
Gate-to-Source Voltage  
± 20  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
31†  
22  
A
125  
PD @TC = 25°C  
PD @TA = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
110  
W
3.0  
0.71  
mW°C  
V/ns  
°C  
dv/dt  
TJ  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
15  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
1.4  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
40  
°C/W  
110  
Notes  through †are on page 10  
www.irf.com  
1
9/23/02  
IRFR/U3410  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
100 ––– –––  
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA „  
Static Drain-to-Source On-Resistance ––– 34 39 mΩ VGS = 10V, ID = 18A „  
––– 4.0  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = 250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
RDS(on)  
VGS(th)  
Gate Threshold Voltage  
2.0  
V
VDS = VGS, ID = 250µA  
VDS = 100V, VGS = 0V  
VDS = 80V, VGS = 0V, TJ = 150°C  
VGS = 20V  
––– ––– 20  
––– ––– 250  
––– ––– 200  
––– ––– -200  
IDSS  
Drain-to-Source Leakage Current  
µA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
IGSS  
nA  
VGS = -20V  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
33 ––– –––  
––– 37 56  
Conditions  
VDS = 25V, ID = 18A  
ID = 18A  
gfs  
S
Qg  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
–––  
–––  
–––  
–––  
–––  
–––  
10 –––  
11 –––  
12 –––  
27 –––  
40 –––  
13 –––  
nC VDS = 50V  
VGS = 10V, „  
VDD = 50V  
ID = 18A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 9.1Ω  
VGS = 10V „  
Ciss  
Coss  
Crss  
Coss  
Coss  
Coss eff.  
Input Capacitance  
––– 1690 –––  
––– 220 –––  
VGS = 0V  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
VDS = 25V  
–––  
26 –––  
ƒ = 1.0MHz  
––– 1640 –––  
––– 130 –––  
––– 250 –––  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 80V, ƒ = 1.0MHz  
VGS = 0V, VDS = 0V to 80V ꢀ  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy‚  
Typ.  
–––  
Max.  
140  
18  
Units  
mJ  
EAS  
IAR  
Avalanche Current  
–––  
A
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
(Body Diode)  
MOSFET symbol  
––– –––  
31†  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
––– ––– 125  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.3  
––– 84 –––  
––– 260 –––  
V
TJ = 25°C, IS = 18A, VGS = 0V „  
ns  
TJ = 25°C, IF = 18A  
Qrr  
ton  
nC di/dt = 100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
2
www.irf.com  
IRFR/U3410  
100  
10  
1
1000  
100  
10  
VGS  
15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
VGS  
15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
TOP  
TOP  
BOTTOM 4.5V  
BOTTOM 4.5V  
4.5V  
4.5V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
Tj = 175°C  
Tj = 25°C  
1
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000  
100  
3.0  
2.0  
1.0  
0.0  
I
= 30A  
D
V
= 10V  
GS  
T
= 175°C  
J
T
= 25°C  
J
10  
V
= 50V  
DS  
20µs PULSE WIDTH  
1
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
-60 -40 -20  
T
0
20 40 60 80 100 120 140 160 180  
V
, Gate-to-Source Voltage (V)  
, Junction Temperature (°C)  
GS  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRFR/U3410  
20  
16  
12  
8
100000  
V
= 0V,  
f = 1 MHZ  
GS  
I = 18A  
D
V
= 80V  
C
= C + C  
,
C
SHORTED  
DS  
iss  
gs  
gd  
ds  
VDS= 50V  
VDS= 20V  
C
= C  
rss  
gd  
C
= C + C  
10000  
1000  
100  
oss  
ds  
gd  
Ciss  
Coss  
Crss  
4
0
10  
0
10  
Q
20  
30  
40  
50  
60  
1
10  
100  
Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000.0  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
100.0  
10.0  
1.0  
T
= 175°C  
J
100µsec  
1msec  
1
Tc = 25°C  
Tj = 175°C  
Single Pulse  
10msec  
T
= 25°C  
J
V
= 0V  
GS  
0.1  
0.1  
1
10  
100  
1000  
0.0  
0.5  
1.0  
1.5  
2.0  
V
, Drain-toSource Voltage (V)  
V
, Source-toDrain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRFR/U3410  
RD  
32  
28  
24  
20  
16  
12  
8
VDS  
LIMITED BY PACKAGE  
VGS  
D.U.T.  
RG  
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
4
DS  
90%  
0
25  
50  
75  
100  
125  
150  
175  
T
, Case Temperature (°C)  
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
10  
1
0.1  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
0.01  
SINGLE PULSE  
( THERMAL RESPONSE )  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFR/U3410  
250  
200  
150  
100  
50  
ID  
7.3A  
13A  
15V  
TOP  
BOTTOM 18A  
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
V
GS  
Ω
0.01  
t
p
Fig 12a. Unclamped Inductive Test Circuit  
V
(BR)DSS  
0
t
p
25  
50  
75  
100  
125  
150  
175  
Starting T , Junction Temperature (°C)  
J
Fig 12c. Maximum Avalanche Energy  
Vs. Drain Current  
I
AS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
.3µF  
Q
G
+
VGS  
V
DS  
D.U.T.  
-
Q
Q
GD  
GS  
V
GS  
V
G
3mA  
I
I
D
G
Current Sampling Resistors  
Charge  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
6
www.irf.com  
IRFR/U3410  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFET® Power MOSFETs  
www.irf.com  
7
IRFR/U3410  
TO-251AA (I-Pak) Package Outline  
Dimensions are shown in millimeters (inches)  
6.73 (.265)  
6.35 (.250)  
2.38 (.094)  
2.19 (.086)  
- A -  
0.58 (.023)  
0.46 (.018)  
1.27 (.050)  
5.46 (.215)  
0.88 (.035)  
5.21 (.205)  
LEAD ASSIGNMENTS  
1 - GATE  
4
2 - DRAIN  
6.45 (.245)  
5.68 (.224)  
3 - SOURCE  
4 - DRAIN  
6.22 (.245)  
5.97 (.235)  
1.52 (.060)  
1.15 (.045)  
1
2
3
- B -  
NOTES:  
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
2 CONTROLLING DIMENSION : INCH.  
2.28 (.090)  
1.91 (.075)  
9.65 (.380)  
8.89 (.350)  
3 CONFORMS TO JEDEC OUTLINE TO-252AA.  
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,  
SOLDER DIP MAX. +0.16 (.006).  
1.14 (.045)  
0.76 (.030)  
1.14 (.045)  
0.89 (.035)  
3X  
0.89 (.035)  
0.64 (.025)  
3X  
0.25 (.010)  
M A M B  
0.58 (.023)  
0.46 (.018)  
2.28 (.090)  
2X  
TO-251AA (I-Pak) Part Marking Information  
PART NUMBER  
EXAMPLE: THIS IS AN IRFR120  
INTERNATIONAL  
WITH ASSEMBLY  
DATE CODE  
YEAR 9 = 1999  
WEEK 19  
RECTIFIER  
IRFU120  
919A  
78  
LOT  
CODE 5678  
L
OGO  
ASSEMB  
LED ON WW 19, 1999  
56  
IN THE ASSE  
MBLY LINE "A"  
LINE A  
ASSEMBLY  
LOT CODE  
8
www.irf.com  
IRFR/U3410  
TO-252AA (D-Pak) Package Outline  
Dimensions are shown in millimeters (inches)  
2.38 (.094)  
2.19 (.086)  
6.73 (.265)  
6.35 (.250)  
1.14 (.045)  
0.89 (.035)  
- A -  
1.27 (.050)  
5.46 (.215)  
0.58 (.023)  
0.46 (.018)  
0.88 (.035)  
5.21 (.205)  
4
6.45 (.245)  
5.68 (.224)  
6.22 (.245)  
5.97 (.235)  
10.42 (.410)  
9.40 (.370)  
1.02 (.040)  
1.64 (.025)  
LEAD ASSIGNMENTS  
1 - GATE  
1
2
3
2 - DRAIN  
0.51 (.020)  
MIN.  
- B -  
3 - SOURCE  
4 - DRAIN  
1.52 (.060)  
1.15 (.045)  
0.89 (.035)  
0.64 (.025)  
3X  
0.58 (.023)  
0.46 (.018)  
1.14 (.045)  
0.76 (.030)  
2X  
0.25 (.010)  
M A M B  
NOTES:  
2.28 (.090)  
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
2 CONTROLLING DIMENSION : INCH.  
4.57 (.180)  
3 CONFORMS TO JEDEC OUTLINE TO-252AA.  
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,  
SOLDER DIP MAX. +0.16 (.006).  
TO-252AA (D-Pak) Part Marking Information  
EXA  
MPLE:  
THIS  
IS AN IRFR120  
PART NUMBER  
DATE CODE  
WIT  
H ASSEMBLY  
INTERNATIONAL  
RECTIFIER  
LOT CODE 1234  
IRFU120  
916A  
ASSEMBLED ON WW 16  
, 1999  
YEA  
R 9 = 1999  
L
OGO  
IN THE ASSEMBLY LINE "A"  
1
3
4
2
WEEK 16  
LINE A  
ASSEMBLY  
LOT CODE  
www.irf.com  
9
IRFR/U3410  
D-Pak (TO-252AA) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TR  
TRL  
TRR  
16.3 ( .641 )  
15.7 ( .619 )  
16.3 ( .641 )  
15.7 ( .619 )  
12.1 ( .476 )  
11.9 ( .469 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
FEED DIRECTION  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
13 INCH  
16 mm  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481.  
Notes:  
 Repetitive rating; pulse width limited by  
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
max. junction temperature.  
ꢀ Coss eff. is a fixed capacitance that gives the same charging time  
‚ Starting TJ = 25°C, L = 0.85mH  
RG = 25Ω, IAS = 18A.  
as Coss while VDS is rising from 0 to 80% VDSS  
†
Calculated continuous current based on maximum allowable  
junction temperature. Package limitation current is 30A.  
ƒ ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 175°C  
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).  
For recommended footprint and soldering techniques refer to application note #AN-994.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.9/02  
10  
www.irf.com  

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