IRFR48ZTRRPBF [INFINEON]

Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
IRFR48ZTRRPBF
型号: IRFR48ZTRRPBF
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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文件: 总11页 (文件大小:348K)
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IRFR5305

Ultra Low On-Resistance

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410 KERSEMI

IRFR5305

Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)

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1699 IRF

IRFR5305HR

暂无描述

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2 IRF

IRFR5305PBF

Ultra Low On-Resistance

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33 KERSEMI

IRFR5305PBF

Ultra Low On-Resistance

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34 KERSEMI

IRFR5305PBF

HEXFET㈢ Power MOSFET ( VDSS = -55V , RDS(on) = 0.065ヘ , ID = -31A )

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308 IRF

IRFR5305PBF

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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4 INFINEON

IRFR5305TRL

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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0 IRF

IRFR5305TRLPBF

Ultra Low On-Resistance

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70 IRF

IRFR5305TRLPBF

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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2 INFINEON

IRFR5305TRPBF

Ultra Low On-Resistance

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-
40 KERSEMI

IRFR5305TRPBF

HEXFET® Power MOSFET

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285 IRF

IRFR5305TRR

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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0 IRF

IRFR5305TRRPBF

暂无描述

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0 IRF

IRFR5305TRRPBF

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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2 INFINEON