IRFR540ZTRLPBF [INFINEON]
Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR540ZTRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96141B
IRFR540ZPbF
IRFU540ZPbF
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
VDSS = 100V
Halogen-Free
RDS(on) = 28.5mΩ
G
Description
ThisHEXFET® PowerMOSFETutilizesthelatest
processing techniques to achieve extremely low
on-resistancepersiliconarea.Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combinetomakethisdesignanextremelyefficient
and reliable device for use in a wide variety of
applications.
ID = 35A
S
D-Pak
I-Pak
IRFR540ZPbF
IRFU540ZPbF
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
I
I
I
@ T = 25°C
C
35
D
D
@ T = 100°C
C
25
140
91
A
DM
P
@T = 25°C Power Dissipation
W
D
C
Linear Derating Factor
0.61
± 20
W/°C
V
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
GS
EAS (Thermally limited)
39
75
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
Operating Junction and
EAR
mJ
T
J
-55 to + 175
T
Storage Temperature Range
°C
STG
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.64
40
Units
Junction-to-Case
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET® isaregisteredtrademarkofInternationalRectifier.
www.irf.com
1
09/30/10
IRFR/U540ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆
∆
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient ––– 0.092 ––– V/°C Reference to 25°C, ID = 1mA
mΩ
V
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
22.5 28.5
VGS = 10V, ID = 21A
VDS = VGS, ID = 50µA
VDS = 25V, ID = 21A
–––
–––
–––
–––
–––
–––
39
4.0
–––
20
Forward Transconductance
28
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
250
200
-200
59
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
ID = 21A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
11
–––
–––
–––
–––
–––
–––
–––
nC VDS = 50V
VGS = 10V
12
14
VDD = 50V
Rise Time
42
ID = 21A
td(off)
tf
Turn-Off Delay Time
43
ns RG = 13 Ω
VGS = 10V
Fall Time
34
LD
Internal Drain Inductance
4.5
Between lead,
D
nH 6mm (0.25in.)
G
LS
Internal Source Inductance
–––
7.5
–––
from package
S
and center of die contact
Ciss
Input Capacitance
––– 1690 –––
VGS = 0V
Coss
Crss
Coss
Coss
Output Capacitance
–––
–––
–––
–––
–––
180
100
720
110
190
–––
–––
–––
–––
–––
V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
35
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
140
integral reverse
SM
(Body Diode)
p-n junction diode.
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
32
1.3
48
60
V
T = 25°C, I = 21A, V = 0V
J S GS
SD
t
ns T = 25°C, I = 21A, VDD = 50V
J F
rr
di/dt = 100A/µs
Q
40
nC
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRFR/U540ZPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
60µs PULSE WIDTH
≤
TOP
TOP
Tj = 25°C
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
BOTTOM
4.5V
60µs PULSE WIDTH
≤
Tj = 175°C
4.5V
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
70
T
= 25°C
J
60
50
40
30
20
10
0
100
10
1
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 10V
V
= 25V
DS
380µs PULSE WIDTH
DS
60µs PULSE WIDTH
≤
0.1
2
3
4
5
6
7
8
0
10
20
30
40
50
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRFR/U540ZPbF
3000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 21A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
C
= C
DS
2500
2000
1500
1000
500
rss
gd
VDS= 50V
VDS= 20V
C
= C + C
ds
oss
gd
C
iss
4
C
C
oss
rss
0
0
0
10
20
30
40
50
60
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.0
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 175°C
J
T
= 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U540ZPbF
2.5
2.0
1.5
1.0
0.5
40
30
20
10
0
I
= 21A
= 10V
D
V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Junction Temperature (°C)
T
, CaseTemperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
1
0.1
D = 0.50
0.20
0.10
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
R1
τ
0.05
J τJ
τ
τ
Cτ
2.626
0.000052
τ
1τ1
τ
0.02
0.01
2 τ2
3τ3
0.6611 0.001297
0.7154 0.01832
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U540ZPbF
160
120
80
40
0
15V
I
D
TOP
6.5A
9.4A
21A
DRIVER
+
L
V
BOTTOM
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
GS
GD
I
= 1.0mA
D
ID = 250µA
= 50µA
V
I
G
D
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
1K
T
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U540ZPbF
100
10
1
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
40
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 21A
Single Pulse
I
D
30
20
10
0
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs.Temperature
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7
IRFR/U540ZPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRFR/U540ZPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S EMB L Y
LOT CODE 1234
ASSEMBLED ON WW16, 2001
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 1 = 2001
WEE K 16
IRFR120
116A
12
34
LINE A
Note: "P" in assemblylineposition
AS S E MB L Y
LOT CODE
indicates "L ead-Free"
"P" in assemblylineposition indicates
"Lead-F ree" qualification to the cons umer-level
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TOTHE
CONSUMER LEVEL (OPTIONAL)
AS S EMB L Y
LOT CODE
YEAR 1 = 2001
WEEK 16
A = AS S E MB L Y S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRFR/U540ZPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S E MB LY
DATE CODE
YEAR 1 = 2001
WEEK 19
RECTIFIER
LOGO
IRFU120
119A
78
LOT CODE 5678
ASSEMBLED ON WW19, 2001
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S EMBL Y
LOT CODE
Note: "P" in assembly lineposition
indicates Lead-Free"
OR
PART NUMBER
DATE CODE
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 1 = 2001
ASSEMBLY
LOT CODE
WE E K 19
A= ASSEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRFR/U540ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.17mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
as Coss while VDS is rising from 0 to 80% VDSS
.
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
www.irf.com
11
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