IRFR825TRPBF [INFINEON]

ZERO VOLTAGE SWITCHING SMPS;


型号：	IRFR825TRPBF
厂家：	Infineon
描述：	ZERO VOLTAGE SWITCHING SMPS 开关
文件：	总9页 (文件大小：216K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 96433A

IRFR825TRPbF

HEXFET^®Power MOSFET

Applications

Trr _typ.

V_DSSR_DS(on)

I_D

typ.

• Zero Voltage Switching SMPS

• Uninterruptible Power Supplies

• Motor Control applications

500V

92ns 6.0A

1.05

Features and Benefits

• Fast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Higher Gate voltage threshold offers improved noise

immunity.

D-Pak

IRFR825TRPbF

Absolute Maximum Ratings

Parameter

Max.

6.0

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

3.9

I_DM

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

119

Linear Derating Factor

Gate-to-Source Voltage

1.0

± 20

W/°C

V_GS

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

9.9

V/ns

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

MOSFET symbol

––– ––– 6.0

(Body Diode)

Pulsed Source Current

showing the

integral reverse

I_SM

––– ––– 24

(Body Diode)

p-n junction diode.

V_SD

t_rr

T_J= 25°C, I_S= 6.0A, V_GS= 0V

Diode Forward Voltage

––– ––– 1.2

T_J= 25°C, I_F= 6.0A

Reverse Recovery Time

Reverse Recovery Charge

––– 92 138 ns

––– 152 228

T_J= 125°C, di/dt = 100A/μs

Q_rr

T_J= 25°C, I_S= 6.0A, V_GS= 0V

T_J= 125°C, di/dt = 100A/μs

T_J= 25°C, I_S= 6.0A, V_GS= 0V

di/dt = 100A/μs

––– 167 251 nC

––– 292 438

I_RRM

t_on

Reverse Recovery Current

Forward Turn-On Time

––– 3.6 5.4

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes through are on page 2

www.irf.com

12/19/12

IRFR825TRPbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250μA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

500

–––

3.0

–––

0.33

1.05

–––

Reference to 25°C, I_D= 1mA

_(BR)DSS/ T_J

––– V/°C

_GS= 10V, I_D= 3.7A

V_DS= V_GS, I_D= 250μA

_DS= 500V, V_GS= 0V

R_DS(on)

V_GS(th)

I_DSS

1.3

5.0

Drain-to-Source Leakage Current

–––

μA

V_DS= 400V, V_GS= 0V, T_J= 125°C

V_GS= 20V

2.0

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

100

-100

V_GS= -20V

Dynamic @ T_J= 25°C (unless otherwise specified)

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

V_DS= 50V, I_D= 3.7A

I_D= 6.0A

gfs

Q_g

7.5

–––

8.5

–––

V_DS= 400V

Q_gs

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

V_GS= 10V, See Fig.14a &14b

V_DD= 250V

Q_gd

t_d(on)

–––

I_D= 6.0A

t_r

t_d(off)

_G=7.5

_GS= 10V, See Fig. 15a & 15b

V_GS= 0V

_DS= 25V

Turn-Off Delay Time

Fall Time

t_f

C_iss

Input Capacitance

––– 1346 –––

C_oss

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

(Energy Related)

–––

C_rss

ƒ = 1.0KHz, See Fig. 5

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

C_oss

––– 1231 –––

_GS= 0V, V_DS= 400V, ƒ = 1.0MHz

_GS= 0V,V_DS= 0V to 400V

C_oss

–––

C_osseff.

C_osseff. (ER)

–––

Avalanche Characteristics

Parameter

Typ.

–––

Max.

178

Units

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

E_AR

11.9

Repetitive Avalanche Energy

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.05

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

Notes:

ꢀ

C_osseff. is a fixed capacitance that gives the same charging timeas

_osswhile V_DSis rising from 0 to 80% V_DSS. C_osseff.(ER) is a fixed

capacitance that stores the same energy as C_osswhile V_DSis rising

from 0 to 80% V_DSS

Repetitive rating; pulse width limited by max.

junction temperature. (See Fig. 11)

Starting T_J= 25°C, L = 40mH, R_G= 25Ω,I_AS= 3.0A.

(See Figure 13).

R_θis measured at T_Japproximately 90°C

I_SD= 6.0A, di/dt ≤ 416A/μs, V_DDV_(BR)DSS,T_J≤ 150°C.

Pulse width ≤ 300μs; duty cycle ≤ 2%.

When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniquea refer to applocation

note # AN- 994 echniques refer to application note #AN-994.

www.irf.com

IRFR825TRPbF

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.8V

5.5V

5.3V

VGS

15V

10V

8.0V

7.0V

6.0V

5.8V

5.5V

TOP

5.3V

BOTTOM

5.3V

0.1

0.01

0.1

0.01

60μs

≤

PULSE WIDTH Tj = 150°C

60μs

≤

PULSE WIDTH Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.5

100

= 6.0A

2.2

1.9

1.6

1.3

1.0

0.7

0.4

= 10V

= 150°C

T = 25°C

= 50V

≤

60μs PULSE WIDTH

0.1

-60 -40 -20

20 40 60 80 100 120 140160

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

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IRFR825TRPbF

625

600

575

550

525

500

100000

= 0V,

= C

f = 1 KHZ

Id = 1mA

+ C , C

SHORTED

iss

= C

rss

oss

10000

1000

100

= C + C

iss

oss

rss

-60 -40 -20

20 40 60 80 100 120140 160

100

1000

T , Temperature ( °C )

, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Fig 6. Typ. Breadown Voltage

Drain-to-Source Voltage

vs. Temperature

100

I = 6.0A

= 400V

= 250V

VDS= 100V

= 150°C

T = 25°C

= 0V

0.1

0.2

0.4

0.6

0.8

1.0

1.2

Q , Total Gate Charge (nC)

, Source-to-Drain Voltage (V)

www.irf.com

IRFR825TRPbF

2.0

1.8

1.6

1.4

1.2

1.0

0.8

= 10V

100

125

150

, Drain Current (A)

, Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Fig 9. Typical Rdson Vs. Drain Current

Case Temperature

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.001

Notes:

SINGLE PULSE

( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFR825TRPbF

800

700

600

500

400

300

200

100

OPERATION IN THIS AREA

LIMITED BY R (on)

TOP

0.59A

1.02A

BOTTOM 3.0A

100μsec

1msec

10msec

Tc = 25°C

Tj = 150°C

Single Pulse

0.1

100

1000

100

125

150

, Drain-toSource Voltage (V)

Starting T , Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy

Fig 12. Maximum Safe Operating Area

vs. Drain Current

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01

Fig 13b. Unclamped Inductive Waveforms

Fig 13a. Unclamped Inductive Test Circuit

Vds

Vgs

VCC

DUT

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 14b. Gate Charge Waveform

Fig 14a. Gate Charge Test Circuit

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IRFR825TRPbF

R_D

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

10%

V_GS

10V

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1

t_d(on)

t_d(off)

t_r

t_f

Fig 15a. Switching Time Test Circuit

Fig 15b. Switching Time Waveforms

Driver Gate Drive

P.W.

Period

D =

D.U.T

Period

P.W.

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

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IRFR825TRPbF

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: THIS IS AN IRFR120

PART NUMBER

WITH ASSEMBLY

LOT CODE 1234

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

YEAR 1 = 2001

WEE K 16

IRFR120

116A

ASSEMBLED ON WW 16, 2001

IN THE ASSEMBLY LINE "A"

LINE A

Note: "P" in assembly lineposition

ASS EMBLY

LOT CODE

indicates "L ead-F ree"

"P" in assembly line position indicates

"Lead-F ree" qualification to the cons umer-level

PART NUMBER

DATE CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

INTERNATIONAL

RECTIFIER

IRFR120

12 34

LOGO

P = DESIGNATES LEAD-FREE

PRODUCT QUALIFIED TO THE

CONSUMER LEVEL (OPTIONAL)

ASSEMBLY

LOT CODE

YEAR 1 = 2001

WEEK 16

A = AS S E MB L Y S IT E CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRFR825TRPbF

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/2012

www.irf.com

IRFR825TRPBF [INFINEON]

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