IRFR8314PBF [INFINEON]

Optimized for UPS/Inverter Applications;


型号：	IRFR8314PBF
厂家：	Infineon
描述：	Optimized for UPS/Inverter Applications
文件：	总9页 (文件大小：549K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFR8314PbF

HEXFET^®Power MOSFET

Application

V_DSS

Optimized for UPS/Inverter Applications

Low Voltage Power Tools

R_DS(on)max

(@ V_GS= 10V)

2.2

m

(@ V_GS= 4.5V)

Qg _(typical)

3.1

Benefits

I_{D (Silicon Limited)}

I_{D (Package Limited)}

179

90A

Fully Characterized Avalanche Voltage and Current

Lead-Free, RoHS Compliant

D-Pak

Gate

Drain

Source

Standard Pack

Base part number Package Type

IRFR8314PbF D-Pak

Orderable Part Number

Form

Quantity

Tape and Reel

2000

IRFR8314TRPbF

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

V_GS

± 20

179

127

I_D@ T_C= 25°C

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

357

125

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

P_D@T_C= 100°C Maximum Power Dissipation

Linear Derating Factor

0.83

T_J

Operating Junction and

-55 to + 175

300

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ.

Max.

1.2

Units

Junction-to-Case 

R_JC

R_JA

–––

Junction-to-Ambient (PCB Mount) 

Junction-to-Ambient 

°C/W

110

Notes through are on page 9

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IRFR8314PbF

Static @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

––– –––

V_GS= 0V, I_D= 250µA

–––

1.6

2.6

––– mV/°C Reference to 25°C, I_D= 1mA 

BV_DSS/T_J

R_DS(on)

2.2

3.1

V_GS= 10V, I_D= 90A 

_GS= 4.5V, I_D= 72A 

m



V_GS(th)

Gate Threshold Voltage

1.2

1.7

2.2

V_DS= V_GS, I_D= 100µA

Gate Threshold Voltage Coefficient

––– -7.0 ––– mV/°C

V_GS(th)/T_J

––– –––

1.0

_DS=24 V, V_GS= 0V

I_DSS

Drain-to-Source Leakage Current

µA

––– ––– 150

––– ––– 100

––– ––– -100

189 ––– –––

V_DS=24V,V_GS= 0V,T_J=125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

_GS= 20V

_GS= -20V

_DS= 15V, I_D=72A

I_GSS

gfs

Q_g

–––

7.7

8.3

2.0

Q_gs1

Q_gs2

Q_gd

Q_godr

Q_sw

R_G

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Gate Resistance

–––

V_DS= 15V

nC V_GS= 4.5V

I_D= 72A



t_d(on)

t_r

Turn-On Delay Time

V_DD= 15V

ns I_D= 72A

Rise Time

t_d(off)

Turn-Off Delay Time

–––

R_G= 1.8

t_f

Fall Time

V_GS= 4.5V 

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 4945 –––

––– 908 –––

––– 493 –––

V_GS= 0V

pF V_DS= 15V

ƒ = 1.0MHz

Avalanche Characteristics

E_{AS (Thermally limited)}

E_{AS (tested)}

I_A

180

279

Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy Tested Value 

Avalanche Current

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Continuous Source Current

(Body Diode) 

I_S

––– ––– 179

Pulsed Source Current

(Body Diode)

I_SM

––– ––– 357

V_SD

Diode Forward Voltage

––– –––

1.0

T_J= 25°C,I_S= 72A,V_GS= 0V 

t_rr

Reverse Recovery Time

Reverse Recovery Charge

–––

ns T_J= 25°C I_F= 72A ,V_DD=15V

Q_rr

130 nC di/dt = 360A/µs 

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IRFR8314PbF

1000

100

1000

100

VGS

10V

VGS

10V

TOP

9.0V

7.0V

5.5V

4.5V

4.0V

3.5V

3.0V

5.5V

4.5V

4.0V

3.5V

3.3V

3.0V

2.8V

BOTTOM

2.8V

60µs PULSE WIDTH



60µs PULSE WIDTH



Tj = 175°C

Tj = 25°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

100

2.0

1.5

1.0

0.5

= 90A

= 10V

= 175°C

= 25°C

= 15V

60µs PULSE WIDTH

0.1

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

10000

1000

= 0V,

= C

f = 1 MHZ

I = 72A

+ C , C

SHORTED

iss

= C

rss

oss

= 24V

= 15V

= C + C

iss

oss

rss

100

, Drain-to-Source Voltage (V)

100

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

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IRFR8314PbF

1000

100

100µsec

1msec

100

= 175°C

LIMITED BY PACKAGE

OPERATION IN THIS

AREA LIMITED BY R

= 25°C

(on)

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

, Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

2.5

2.0

1.5

1.0

0.5

0.0

200

180

Limited By Package

160

140

120

100

= 150µA

ID = 250µA

= 1.0mA

= 1.0A

-75 -50 -25

25 50 75 100 125 150 175 200

, Temperature ( °C )

100

125

150

175

, Case Temperature (°C)

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs. Case Temperature

0.1

0.01

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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July 01, 2014

IRFR8314PbF

800

700

600

500

400

300

200

100

= 90A

TOP

16A

33A

BOTTOM 72A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

Starting T , Junction Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 13. Maximum Avalanche Energy vs. Drain Current

Fig 12. Typical On-Resistance vs. Gate Voltage

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IRFR8314PbF

Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 15a. Unclamped Inductive Test Circuit

Fig 15b. Unclamped Inductive Waveforms

Fig 16a. Switching Time Test Circuit

Fig 16b. Switching Time Waveforms

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 17b. Gate Charge Waveform

Fig 17a. Gate Charge Test Circuit

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IRFR8314PbF

D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: THIS IS AN IRFR120

PART NUMBER

WITH ASSEMBLY

LOT CODE 1234

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

YEAR 1 = 2001

WEEK 16

IRFR120

116A

ASSEMBLED ON WW 16, 2001

IN THE ASSEMBLY LINE "A"

LINE A

Note: "P" in assembly line position

ASSEMBLY

LOT CODE

indicates "Lead-Free"

"P" in assembly line position indicates

"Lead-Free" qualification to the consumer-level

PART NUMBER

DATE CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

INTERNATIONAL

RECTIFIER

IRFR120

12 34

LOGO

P = DESIGNATES LEAD-FREE

PRODUCT QUALIFIED TO THE

CONSUMER LEVEL (OPTIONAL)

ASSEMBLY

LOT CODE

YEAR 1 = 2001

WEEK 16

A = ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFR8314PbF

D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches)

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFR8314PbF

Qualification Information^†

Qualification Level

Industrial

(per JEDEC JESD47F) ^††

D-Pak

MSL1

Yes

Moisture Sensitivity Level

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is

90A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with

some lead mounting arrangements. (Refer to AN-1140)



Repetitive rating; pulse width limited by max. junction temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.07mH, R_G= 50, I_AS= 72A, V_GS=10V. 

Pulse width  400µs; duty cycle  2%.



R_is measured at T_Japproximately 90°C.

This value determined from sample failure population, starting T_J=25°C,

L=0.07mH, R_G= 50, I_AS= 72A, V_GS=10V.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf



Revision History

Date

Comments

07/01/2014

The Device is active without bulk part which is removed from Table on page 1

IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA

To contact Internaꢀonal Recꢀﬁer, please visit hꢁp://www.irf.com/whoto‐call/

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IRFR8314PBF [INFINEON]

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