IRFR9214TRR [INFINEON]
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3;
| 型号： | IRFR9214TRR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1658A
IRFR/U9214
PRELIMINARY
HEXFET® Power MOSFET
D
l P-Channel
VDSS = -250V
RDS(on) = 3.0Ω
ID = -2.7A
l Surface Mount (IRFR9214)
l Straight Lead (IRFU9214)
l Advanced Process Technology
l Fast Switching
G
l Fully Avalanche Rated
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
I-Pa k
D -Pa k
T O -2 52 A A
TO -2 5 1 AA
The D-Pak is designed for surface mounting using vapor
phase, infrared, orwavesolderingtechniques. Thestraight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-2.7
-1.7
A
-11
PD @TC = 25°C
Power Dissipation
50
W
W/°C
V
Linear Derating Factor
0.40
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Avalanche Current
100
mJ
-2.7
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
5.0
mJ
-5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
260 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
2.5
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
110
9/23/97
IRFR/U9214
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-250 ––– –––
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.25 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 3.0
Ω
V
S
VGS = -10V, ID = -1.7A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -1.7A
VDS = -250V, VGS = 0V
VDS = -200V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 ––– -4.0
0.9 ––– –––
Forward Transconductance
––– ––– -100
––– ––– -500
––– ––– 100
––– ––– -100
––– ––– 14
––– ––– 3.1
––– ––– 6.8
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -1.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = -200V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
14 –––
20 –––
17 –––
VDD = -125V
RiseTime
ID = -1.7A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG =21 Ω
RD =70 See Fig. 10
Between lead,
6mm (0.25in.)
D
4.5
7.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
from package
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 220 –––
Output Capacitance
–––
–––
75 –––
11 –––
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-2.7
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -11
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– -5.8
––– 150 220
V
TJ = 25°C, IS = -2.7A, VGS = 0V
ns
TJ = 25°C, IF = -1.7A
Qrr
ton
––– 870 1300 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 27 mH
RG = 25Ω, IAS = -2.7A. (See Figure 12)
ISD ≤ -2.7A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9214
10
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM -4.5V
BOTTOM -4.5V
1
1
-4.5V
-4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
10
-2.7A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
1
V
= -50V
DS
20µs PULSE WIDTH
V
= -10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
4
5
6
7
8
9
10
°
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFR/U9214
20
16
12
8
400
I = -1.7 A
D
V
iss
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
V
V
V
=-200V
=-125V
=-50V
gs
gd ,
gd
ds
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds
300
200
100
0
C
iss
C
C
4
oss
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
3
6
9
12
15
1
10
100
Q
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
100us
1
1
1ms
°
T = 25 C
J
10ms
T = 25°C
C
°
T = 150 C
J
V
= 0 V
Single Pulse
GS
0.1
1.0
0.1
10
100
1000
2.0
3.0
4.0
5.0
V
,Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFR/U9214
RD
VDS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC
J
DM
C
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR/U9214
L
V
D S
200
160
120
80
I
D
-
+
TOP
-1.3A
-1.8A
BOTTOM -2.8A
D .U .T
AS
R
G
VDD
I
A
D R IVER
-20V
0 .0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
40
I
AS
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFR/U9214
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRFR/U9214
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
2
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
3
0.51 (.020)
MIN.
2 - DRAIN
- B -
3 - SOUR CE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOWN ARE BEFORE SOLD ER DIP,
SOLDER DIP MAX. +0.16 (.006).
Part Marking Information
TO-252AA (D-Pak)
EXAM PLE : THIS IS AN IRFR120
W ITH ASSEMBL Y
A
INTERNATIONAL
RECT IFIER
LOGO
LOT CODE 9U1P
FIRST PORTION
OF PART NUMBER
IRFR
12 0
9 U 1P
ASSEMBL Y
SECOND PORTION
OF PART NUM BER
L OT CODE
IRFR/U9214
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
- A -
0.58 (.023)
0.46 (.018)
1.27 (.050)
5.46 (.215)
0.88 (.035)
5.21 (.205)
LEAD ASSIGNMENTS
1 - GATE
4
2 - DRAIN
6.45 (.245)
5.68 (.224)
3 - SOURCE
4 - DRAIN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
- B -
NOTES:
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLIN G DIMENSION : INCH.
2.28 (.090)
1.91 (.075)
9.65 (.380)
8.89 (.350)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.76 (.030)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M A M B
0.58 (.023)
0.46 (.018)
2.28 (.090)
2X
Part Marking Information
TO-251AA (I-Pak)
EXAM PLE : THIS IS AN IRF U1 20
W ITH ASSEM BLY
INTE RNATIONAL
RECTIFIER
LOGO
LOT CODE 9U1P
FIRST PORTION
OF PART NUM BER
IRFU
120
9U 1 P
SECOND PORTION
OF PART NUM BER
ASSEM BLY
LOT CODE
IRFR/U9214
Tape & Reel Information
TO-252AA
T R
T R L
T R R
16 .3 ( .64 1
15 .7 ( .61 9
)
)
1 6 .3 ( .6 4 1
1 5 .7 ( .6 1 9
)
)
1 2 .1 ( .4 76
1 1 .9 ( .4 69
)
)
8 .1 ( .3 1 8
7 .9 ( .3 1 2
)
)
F EE D D IR EC TIO N
F EE D D IR EC TIO N
N O T ES :
1 . C O N T R O LL IN G D IM EN S IO N : M IL LIM ET ER .
2 . AL L D IM E N SIO N S AR E S H O W N IN M IL L IM ET E R S ( IN C H ES ).
3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA-5 4 1 .
1 3 IN C H
1 6 m m
N O T ES
:
1 . O U T L IN E C O N F O R M S T O EIA-4 8 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
9/97
相关型号：
IRFR9214TRRPBF
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
VISHAY
IRFR9214TRRPBF
Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRFR9220
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
SAMSUNG
IRFR9220
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明