IRFS17N20DTRRPBF [INFINEON]

Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3;


型号：	IRFS17N20DTRRPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 16A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 开关脉冲晶体管
文件：	总12页 (文件大小：277K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD- 95325

IRFB17N20DPbF

IRFS17N20DPbF

SMPS MOSFET

IRFSL17N20DPbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

200V

R_DS(on)max

I_D

16A

0.17Ω

l Lead-Free

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRFS17N20D

TO-262

IRFSL17N20D

TO-220AB

IRFB17N20D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

140

Linear Derating Factor

0.90

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

2.7

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Typical SMPS Topologies

l Telecom 48V input Forward Converter

Notes through ꢀ are on page 11

www.irf.com

6/1/04

IRFB/IRFS/IRFSL17N20DPbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

200 ––– –––

––– 0.25 ––– V/°C Reference to 25°C, I_D= 1mA

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

R_DS(on)

V_GS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.17

3.0 ––– 5.5

Ω

V_GS= 10V, I_D= 9.8A

V_DS= V_GS, I_D= 250µA

V_DS= 200V, V_GS= 0V

V_DS= 160V, V_GS= 0V, T_J= 150°C

V_GS= 30V

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

I_GSS

V_GS= -30V

Dynamic @ T_J= 25°C (unless otherwise specified)

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

V_DS= 50V, I_D= 9.8A

I_D= 9.8A

g_fs

5.3

–––

––– –––

Q_g

8.4

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 160V

V_GS= 10V,

11 –––

19 –––

18 –––

6.6 –––

V_DD= 100V

I_D= 9.8A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 5.1Ω

V_GS= 10V

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

––– 1100 –––

––– 190 –––

V_GS= 0V

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V_DS= 25V

–––

––– 1340 –––

––– 76 –––

––– 130 –––

44 –––

ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 160V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 160V ꢀ

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Typ.

Max.

240

9.8

Units

E_AS

I_AR

–––

Avalanche Current

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.1

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Junction-to-Ambient

–––

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.3

––– 160 240

T_J= 25°C, I_S= 9.8A, V_GS= 0V

T_J= 25°C, I_F= 9.8A

Q_rr

t_on

––– 900 1350 nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

www.irf.com

IRFB/IRFS/IRFSL17N20DPbF

100

VGS

15V

12V

10V

8.0V

7.0V

6.0V

5.5V

VGS

TOP

15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM5.0V

BOTTOM 5.0V

5.0V

0.1

0.01

5.0V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 175 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.5

100

16A

3.0

2.5

2.0

1.5

1.0

0.5

0.0

T = 175 C

T = 25 C

= 50V

20µs PULSE WIDTH

=10V

0.1

5.0

-60 -40 -20

20 40 60 80 100 120 140 160 180

6.0

7.0

8.0 9.0

10.0

T , Junction Temperature ( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRFB/IRFS/IRFSL17N20DPbF

10000

= 9.8A

= 0V,

f = 1 MHZ

= 160V

= 100V

= 40V

= C + C

SHORTED

iss

= C

rss

= C + C

oss

1000

100

Ciss

Coss

Crss

FOR TEST CIRCUIT

SEE FIGURE 13

100

1000

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 175 C

10us

100us

T = 25 C

1ms

10ms

T = 25 C

T = 175 C

Single Pulse

= 0 V

0.1

0.2

100

1000

0.5

0.8

1.1

1.4

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRFB/IRFS/IRFSL17N20DPbF

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T =P

x Z

+ T

thJC C

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB/IRFS/IRFSL17N20DPbF

500

15V

TOP

4.0A

7.0A

400

300

200

100

BOTTOM 9.8A

DRIVER

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

10 V

.3µF

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRFB/IRFS/IRFSL17N20DPbF

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T

R_G

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

Period

D =

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET^®Power MOSFETs

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IRFB/IRFS/IRFSL17N20DPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

3.78 (.149)

- B -

10.29 (.405)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

3.54 (.139)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

LEAD ASSIGNMENTS

1.15 (.045)

MIN

HEXFET

IGBTs, CoPACK

1 - GATE

2 - DRAIN

3 - SOURCE

2- DRAIN

3- SOURCE

4 - DRAIN

1- GATE

2- COLLECTOR

3- EMITTER

4- COLLECTOR

4- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

CONTROLLING DIMENSION : INCH

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010

LOT CODE 1789

PART NUMBER

AS S EMB LED ON WW 19, 1997

IN THE AS S EMBLY LINE "C"

INTE RNAT IONAL

RECT IFIER

LOGO

Note: "P" in assembly line

position indicates "Lead-Free"

DAT E CODE

YEAR 7 = 1997

WEEK 19

AS S EMBLY

LOT CODE

LINE C

www.irf.com

IRFB/IRFS/IRFSL17N20DPbF

D²Pak Package Outline

Dimensions are shown in millimeters (inches)

D²Pak Part Marking Information (Lead-Free)

T H IS IS AN IR F 530S WIT H

P AR T N U MB E R

L OT CODE 8024

IN T E R N AT IONAL

R E CT IF IE R

L OGO

AS S E MB L E D ON WW 02, 2000

IN T H E AS S E MB L Y L INE "L "

F 530S

DAT E CODE

YE AR 0 = 2000

WE E K 02

N ote: "P " in as s embly line

pos ition indicates "L ead-F ree"

AS S E MB L Y

L OT CODE

L INE

P AR T N U MB E R

IN T E R N AT ION AL

R E CT IF IE R

L OGO

F 530 S

D AT E CODE

D E S IGN AT E S L E AD -F R E E

P R OD U CT (OP T ION AL )

AS S E M B L Y

L OT CODE

YE AR

WE E K 02

A = AS S E MB L Y S IT E COD E

0 = 2000

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IRFB/IRFS/IRFSL17N20DPbF

TO-262 Package Outline

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

TO-262 Part Marking Information

E XAMPLE : THIS IS AN IRL3103L

LOT CODE 1789

PART NUMBER

INTERNATIONAL

ASSEMBLED ON WW 19, 1997

RECTIFIER

IN THE ASSEMBLY LINE "C"

LOGO

DATE CODE

YEAR 7 = 1997

WEEK 19

Note: "P" in assembly line

pos ition indicates "Lead-Free"

AS S E MBL Y

LOT CODE

LINE C

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

DATE CODE

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 7 = 1997

ASSEMBLY

LOT CODE

WE EK 19

A= ASSEMBLY SITE CODE

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IRFB/IRFS/IRFSL17N20DPbF

D²Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature.

R_G= 25Ω, I_AS= 9.8A.

ꢀ C_osseff. is a fixed capacitance that gives the same charging time

Starting T_J= 25°C, L = 5.0mH

as C_osswhile V_DSis rising from 0 to 80% V_DSS

I_SD≤ 9.8A, di/dt ≤ 110A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

This is only applied to TO-220AB package

This is applied to D²Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/04

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

IRFS17N20DTRRPBF [INFINEON]

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