IRFS23N20DTRLP [INFINEON]
High frequency DC-DC converters;
| 型号： | IRFS23N20DTRLP |
| 厂家： | 
Infineon |
| 描述： | High frequency DC-DC converters 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95536
IRFB23N20DPbF
IRFS23N20DPbF
IRFSL23N20DPbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
RDS(on) max
ID
24A
0.10Ω
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D2Pak
TO-262
TO-220AB
IRFB23N20D
IRFS23N20D
IRFSL23N20D
Absolute Maximum Ratings
Parameter
Max.
24
17
96
Units
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
Power Dissipation
170
Linear Derating Factor
1.1
W/°C
V
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
3.3
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through ꢀ are on page 11
www.irf.com
1
7/20/04
IRFB/IRFS/IRFSL23N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.10
3.0 ––– 5.5
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
V
VGS = 10V, ID = 14A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 14A
ID = 14A
gfs
13
––– –––
S
Qg
–––
–––
–––
–––
–––
–––
–––
57
14
27
86
21
40
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 160V
VGS = 10V,
14 –––
32 –––
26 –––
16 –––
VDD = 100V
ID = 14A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.6Ω
VGS = 10V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1960 –––
––– 300 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
65 –––
pF
ƒ = 1.0MHz
––– 2200 –––
––– 120 –––
––– 220 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
250
14
Units
mJ
A
EAS
IAR
–––
–––
–––
EAR
Repetitive Avalanche Energy
17
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.90
–––
62
Units
RθJC
RθCS
RθJA
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
Junction-to-Ambient
–––
40
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
24
96
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 200 300
V
TJ = 25°C, IS = 14A, VGS = 0V
ns
TJ = 25°C, IF = 14A
Qrr
ton
2
––– 1300 1940 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRFB/IRFS/IRFSL23N20DPbF
100
100
10
VGS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
TOP
BOTTOM 5.0V
BOTTOM5.0V
1
10
5.0V
5.0V
0.1
0.01
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 175 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
100
24A
=
I
D
°
T = 175 C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
5.0
6.0
7.0
8.0 9.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
°
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFB/IRFS/IRFSL23N20DPbF
20
16
12
8
I
D
= 14A
100000
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
= 160V
= 100V
= 40V
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
10
0
0
20
40
60 80
100
1
10
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10
10us
°
T = 25 C
100us
1ms
J
1
°
T = 25 C
C
°
10ms
T = 175 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
1000
0.5
0.8
1.1
1.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFB/IRFS/IRFSL23N20DPbF
RD
25
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
2
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB/IRFS/IRFSL23N20DPbF
600
15V
I
D
TOP
5.9A
10A
500
400
300
200
100
0
BOTTOM 14A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
10 V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFB/IRFS/IRFSL23N20DPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFB/IRFS/IRFSL23N20DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INTE RNAT IONAL
RECT IFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
8
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IRFB/IRFS/IRFSL23N20DPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT COD E 8024
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
F 530S
D AT E CODE
Y E AR 0 = 2000
W E E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT COD E
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530 S
D AT E CODE
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E M B L Y
L OT CODE
YE AR
WE E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
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9
IRFB/IRFS/IRFSL23N20DPbF
TO-262 Package Outline
TO-262 Part Marking Information
E XAMPL E : T H IS IS AN IR L 3103L
L OT CODE 1789
PAR T NU MB E R
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y LINE "C"
DAT E CODE
YE AR 7 = 1997
WE E K 19
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
L INE
C
O R
PAR T NU MB E R
DAT E CODE
INT E R NAT IONAL
R E CT IF IE R
L OGO
P
=
DE S IGNAT E S L E AD-F R E E
PR ODU CT (OPT IONAL)
AS S E MB L Y
L OT CODE
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
10
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IRFB/IRFS/IRFSL23N20DPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
3.90 (.153)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 2.6mH
R
G = 25Ω, IAS = 14A.
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 14A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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