IRFS42N20DPBF [INFINEON]
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| 型号： | IRFS42N20DPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 转换器 |
| 文件： | 总6页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94114
PROVISIONAL
IRFB42N20D
IRFS42N20D
IRFSL42N20D
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
ID
42.6A
0.055Ω
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D2Pak
IRFS42N20D
TO-262
IRFSL42N20D
TO-220AB
IRFB42N20D
Absolute Maximum Ratings
Parameter
Max.
42.6
Units
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
170
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
Power Dissipation
300
Linear Derating Factor
2
W/°C
V
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
TBD
-55 to + 175
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
260 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes through are on page 6
www.irf.com
1
03/05/01
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– TBD ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.055
VGS(th)
Ω
VGS = 10V, ID = 25.5A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
Gate Threshold Voltage
3.0
––– 5.5
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 25.5A
ID = 25.5A
gfs
TBD ––– –––
––– 103 –––
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
26 –––
48 –––
nC VDS = 160V
VGS = 10V
VDD = 100V
––– TBD –––
––– TBD –––
––– TBD –––
––– TBD –––
––– 3470 –––
––– 560 –––
––– 120 –––
––– TBD –––
––– TBD –––
––– TBD –––
ID = 25.5A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = TBDΩ
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
TBD
25.5
30
Units
mJ
EAS
IAR
–––
–––
–––
A
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.5
Units
RθJC
RθCS
RθJA
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
–––
62
°C/W
Junction-to-Ambient
–––
40
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
42.6
170
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– TBD TBD
––– 2.4 3.6
V
TJ = 25°C, IS = 25.5A, VGS = 0V
TJ = 25°C, IF = 25.5A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415 )
10.29 (.405 )
-
B
-
3.78 (.149)
3.54 (.139)
2.87 (.1 13)
2.62 (.1 03)
4 .69 (.18 5)
4 .20 (.16 5)
1.3 2 (.05 2)
1.2 2 (.04 8)
-
A
-
6.4 7 (.2 55)
6.1 0 (.2 40)
4
15 .24 (.60 0)
14 .84 (.58 4)
1.15 (.04 5)
M IN
LE A D A S S IG N M E N TS
1 - G A T E
1
2
3
2 - D R A IN
3 - S O U R C E
4 - D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30)
4.06 (.160)
3.55 (.140)
0.93 (.0 37)
0.69 (.0 27)
0.55 (.02 2)
0.46 (.01 8)
3X
3 X
1 .40 (.05 5)
3 X
1 .15 (.04 5)
0.3 6 (.014 )
M
B
A
M
2.9 2 (.115 )
2.6 4 (.104 )
2 .54 (.10 0)
2X
N O TE S :
1
2
D IME N S IO N IN G
&
TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982.
3
4
O U TL IN E C O N F O R MS TO JE D E C O U T LIN E T O -2 20A B .
C O N TR O LLIN G D IM E N S IO N : IN C H
H E A T S IN K
&
LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E XAM PL E : TH IS IS AN IR F 1010
W ITH ASS E MB LY
A
IN TE R N A TIO N AL
R EC TIF IER
PA R T N U M BE R
LO T C O DE 9B 1M
IR F 1010
9246
LO G O
9B
1M
D ATE C O D E
(YYW W )
A SS EM BLY
LO T
C O D E
YY
=
YEA R
= W EE K
W W
www.irf.com
3
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
4.69 (.185)
4.20 (.165)
1.40 (.055)
MAX.
- A -
1.32 (.052)
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SO LDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
4
www.irf.com
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
TO-262 Package Outline
TO-262 Part Marking Information
www.irf.com
5
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
D2Pak Tape & Reel Information
T R R
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
F E E D D IRE CT IO N
TR L
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
F E E D D IR E C TIO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = TBDmH
as Coss while VDS is rising from 0 to 80% VDSS
RG = TBDΩ, IAS = 25.5A.
This is only applied to TO-220AB package
ISD ≤ 25.5A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 9/00
6
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