IRFS9N60APBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRFS9N60APBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总9页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95538
SMPS MOSFET
IRFS9N60APbF
HEXFET® Power MOSFET
Applications
VDSS
600V
RDS(on) max
ID
9.2A
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High Speed Power Switching
l Lead-Free
0.75Ω
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
G D S
D2Pak
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
9.2
5.8
A
37
PD @TC = 25°C
Power Dissipation
170
W
W/°C
V
Linear Derating Factor
1.3
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Applicable Off Line SMPS Topologies:
l Active Clamped Forward
l Main Switch
Notes through ꢀ are on page 9
www.irf.com
1
7/21/04
IRFS9N60APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
600 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.75
2.0 ––– 4.0
Ω
V
VGS = 10V, ID = 5.5.A
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 600V, VGS = 0V
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
5.5 ––– –––
Conditions
VDS = 25V, ID = 3.1A
ID = 9.2A
gfs
S
Qg
––– ––– 49
––– ––– 13
––– ––– 20
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
13 –––
25 –––
30 –––
22 –––
VDD = 300V
ID = 9.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 35.5Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1400 –––
––– 180 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
7.1 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V ꢀ
––– 1957 –––
–––
–––
49 –––
96 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
290
9.2
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
17
mJ
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)
Typ.
–––
–––
Max.
0.75
40
Units
RθJC
RθJA
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
9.2
37
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 530 800
––– 3.0 4.4
V
TJ = 25°C, IS = 9.2A, VGS = 0V
ns
TJ = 25°C, IF = 9.2A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFS9N60APbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
BOTTOM 4.7V
4.7V
4.7V
20µs PULSE WIDTH
T = 150 C
20µs PULSE WIDTH
°
°
J
T = 25 C
J
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
9.2A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4.0
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFS9N60APbF
20
16
12
8
2400
I
D
= 9.2A
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
400V
= 300V
= 120V
V
V
V
=
= C
DS
DS
DS
2000
1600
1200
800
400
0
= C + C
ds
gd
C
iss
C
oss
4
C
rss
V
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
50
1
10
100
1000
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
10us
°
T = 150 C
J
100us
1
1ms
°
T = 25 C
1
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.5
0.7
1.0
1.2
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFS9N60APbF
RD
10.0
8.0
6.0
4.0
2.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFS9N60APbF
600
500
400
300
200
100
0
I
D
TOP
4.1A
5.8A
15V
BOTTOM 9.2A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFS9N60APbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFS9N60APbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT COD E 8024
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
F 530S
D AT E CODE
Y E AR 0 = 2000
W E E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT COD E
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
8
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IRFS9N60APbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 6.8mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 9.2A. (See Figure 12)
ISD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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9
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