IRFSL3306_技术文档

IRFB3306PbF

IRFS3306PbF

IRFSL3306PbF

HEXFET^®Power MOSFET

60V

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

D

V_DSS

R_DS(on)typ.

3.3m

4.2m

160A

max.

l Hard Switched and High Frequency Circuits

G

I_D

(Silicon Limited)

Benefits

I_{D (Package Limited)}

120A

S

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

D

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D

S

D

S

D

G

l RoHSCompliant,Halogen-Free

D²Pak

TO-262

TO-220AB

IRFS3306PbF

IRFSL3306PbF

IRFB3306PbF

G

D

S

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

IRFB3306PbF

IRFSL3306PbF

TO-220

TO-262

Tube

50

IRFB3306PbF

Tube

50

IRFSL3306PbF

IRFS3306PbF

D2Pak

Tape and Reel Left

Tape and Reel Right

800

IRFS3306TRLPbF

IRFS3306TRRPbF

Absolute Maximum Ratings

Symbol

Parameter

Max.

160

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

110

A

120

620

230

P_D@T_C= 25°C

Maximum Power Dissipation

W

1.5

Linear Derating Factor

W/°C

V

± 20

V_GS

Gate-to-Source Voltage

14

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

184

mJ

A

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

mJ

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Typ.

Max.

0.65

–––

62

Units

R_θ

–––

0.50

–––

JC

R_θ

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

CS

°C/W

R_θ

JA

R_θ

JA

40

1

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min. Typ. Max. Units

60 ––– –––

––– 0.07 ––– V/°C Reference to 25°C, I_D= 5mA

Conditions

V_GS= 0V, I_D= 250μA

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V

ΔV_(BR)DSS/ΔT_J

R_DS(on)

–––

2.0

3.3

4.2

4.0

20

V_GS= 10V, I_D= 75A

mΩ

V

V_GS(th)

–––

V_DS= V_GS, I_D= 150μA

I_DSS

Drain-to-Source Leakage Current

––– –––

μA V_DS= 60V, V_GS= 0V

––– ––– 250

––– ––– 100

––– ––– -100

V_DS= 48V, V_GS= 0V, T_J= 125°C

I_GSS

R_G

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

nA

V_GS= 20V

V_GS= -20V

–––

0.7

–––

Ω

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

gfs

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

V_DS= 50V, I_D= 75A

nC I_D= 75A

_DS=30V

230 ––– –––

S

Q_g

–––

85

20

26

59

15

76

40

77

120

–––

Q_gs

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

V

Q_gd

V_GS= 10V

Q_sync

–––

I_D= 75A, V_DS=0V, V_GS= 10V

t_d(on)

ns V_DD= 30V

t_r

Rise Time

I_D= 75A

t_d(off)

Turn-Off Delay Time

R = 2.7

Ω

G

t_f

Fall Time

V_GS= 10V

pF V_GS= 0V

V_DS= 50V

C_iss

Input Capacitance

––– 4520 –––

––– 500 –––

––– 250 –––

––– 720 –––

––– 880 –––

C_oss

Output Capacitance

C_rss

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

C_osseff. (ER)

C_osseff. (TR)

V_GS= 0V, V_DS= 0V to 48V , See Fig. 11

V_GS= 0V, V_DS= 0V to 48V

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

––– –––

A

MOSFET symbol

160

D

(Body Diode)

Pulsed Source Current

showing the

integral reverse

G

I_SM

––– ––– 620

A

S

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

––– –––

1.3

V

T_J= 25°C, I_S= 75A, V_GS= 0V

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 51V,

Reverse Recovery Time

Reverse Recovery Charge

–––

31

35

34

45

1.9

ns

I_F= 75A

di/dt = 100A/μs

Q_rr

nC

A

I_RRM

t_on

Reverse Recovery Current

Forward Turn-On Time

–––

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 120A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

I_SD≤ 75A, di/dt ≤ 1400A/μs, V_DD≤ V_(BR)DSS, T_J≤ 175°C.

ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.

C_osseff. (TR) is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

C_osseff. (ER) is a fixed capacitance that gives the same energy as

C_osswhile V_DSis rising from 0 to 80% V_DSS

.

Limited by T_Jmax, starting T_J= 25°C, L = 0.04mH

R_G= 25Ω, I_AS= 96A, V_GS=10V. Part not recommended for use

above this value.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

R_θis measured at T_Japproximately 90°C

2

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

1000

100

10

VGS

15V

VGS

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

TOP

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

BOTTOM

100

4.5V

60μs PULSE WIDTH

Tj = 175°C

≤

60μs PULSE WIDTH

≤

Tj = 25°C

10

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

10

2.5

2.0

1.5

1.0

0.5

I

= 75A

D

V

= 10V

GS

T

= 175°C

J

T

= 25°C

J

1

V

= 25V

DS

≤ 60μs PULSE WIDTH

0.1

2.0

3.0

V

4.0

5.0

6.0

7.0

8.0

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

, Gate-to-Source Voltage (V)

GS

T

, Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

8000

6000

4000

2000

0

20

V

C

= 0V,

f = 1 MHZ

I = 75A

D

GS

= C + C , C SHORTED

iss

gs

gd ds

V

= 48V

DS

C

= C

rss

gd

16

12

8

VDS= 30V

VDS= 12V

C

= C + C

oss

ds

gd

Ciss

4

Coss

Crss

0

20

40

60

80

100 120 140

1

10

100

Q

Total Gate Charge (nC)

G

V

, Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

1000

100

10

10000

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

1000

100

10

T

= 175°C

J

1msec

100μsec

T

= 25°C

J

10msec

1

Tc = 25°C

DC

Tj = 175°C

Single Pulse

V

= 0V

GS

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

, Source-to-Drain Voltage (V)

0.1

1

10

100

V

, Drain-toSource Voltage (V)

V

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

180

160

140

120

100

80

70

60

50

I

= 5mA

D

Limited By Package

60

40

20

0

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

25

50

75

100

125

150

175

T

, Junction Temperature (°C)

T

, Case Temperature (°C)

J

C

Fig 9. Maximum Drain Current vs.

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

1.5

1.0

0.5

0.0

800

I

D

TOP

13A

18A

96A

600

400

200

0

BOTTOM

0

10

V

20

30

40

50

60

25

50

75

100

125

150

175

Drain-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

DS,

J

Fig 11. Typical C_OSSStored Energy

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

1

0.1

D = 0.50

0.20

0.10

0.05

0.02

R₁

R₂

0.01

τι (sec)

Ri (°C/W)

τ_J

τ_C

τ_J

τ₁

0.249761 0.00028

τ

²τ₂

τ₁

0.400239 0.005548

Ci= τi/Ri

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

10

1

Duty Cycle = Single Pulse

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and

Tstart =25°C (Single Pulse)

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

200

160

120

80

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

TOP

BOTTOM 1% Duty Cycle

= 96A

Single Pulse

I

D

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

40

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

0

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

25

50

75

100

125

150

175

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Starting T , Junction Temperature (°C)

J

Fig 15. Maximum Avalanche Energy vs. Temperature

5

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

16

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

I

= 1.0A

D

= 1.0mA

= 250μA

12

8

ID = 150μA

I

= 30A

F

4

V

= 51V

R

T

= 125°C

= 25°C

J

T

0

100 200 300 400 500 600 700 800 900 1000

-75 -50 -25

0

J

25 50 75 100 125 150 175

, Temperature ( °C )

di / dt - (A / μs)

T

f

Fig. 17 - Typical Recovery Current vs. di_f/dt

Fig 16. Threshold Voltage Vs. Temperature

16

350

300

250

200

150

12

8

I

= 45A

= 51V

I

= 30A

= 51V

100

50

0

F

4

0

V

R

T

= 125°C

= 25°C

T

= 125°C

= 25°C

J

T

J

100 200 300 400 500 600 700 800 900 1000

di / dt - (A / μs)

f

Fig. 18 - Typical Recovery Current vs. di_f/dt

Fig. 19 - Typical Stored Charge vs. di_f/dt

350

300

250

200

150

100

50

I

= 45A

F

V

= 51V

R

T

= 125°C

= 25°C

J

T

J

0

100 200 300 400 500 600 700 800 900 1000

di / dt - (A / μs)

f

Fig. 20 - Typical Stored Charge vs. di_f/dt

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

Driver Gate Drive

P.W.

D.U.T

Period

D =

Period

P.W.

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Current

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

I

AS

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

L_D

V_DS

90%

+

-

V_DD

10%

V_GS

D.U.T

V_GS

Pulse Width < 1μs

Duty Factor < 0.1%

t_d(on)

t_d(off)

t_r

t_f

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Id

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

INTERNATIONAL

RECTIFIER LOGO

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

DATE CODE

P = LEAD-FREE

Y = LAST DIGIT OF YEAR

WW = WORK WEEK

? = ASSEMBLY SITE CODE

IRFB3306

PYWW?

IRFB3306

YWWP

DATE CODE

OR

ASSEMBLY

LOT CODE

ASSEMBLY

LOT CODE

Y = LAST DIGIT OF YEAR

WW = WORK WEEK

P = LEAD-FREE

LC

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

8

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

D²Pak Package Outline (Dimensions are shown in millimeters (inches))

D²PakPartMarkingInformation

INTERNATIONAL

RECTIFIER LOGO

INTERNATIONAL

RECTIFIER LOGO

PART NUMBER

FS3306

OR

PYWW?

YWWP

ASSEMBLY

LOT CODE

ASSEMBLY

LOT CODE

DATE CODE

P = LEAD-FREE

LC

Y = LAST DIGIT OF YEAR

WW = WORK WEEK

P = LEAD-FREE

Y = LAST DIGIT OF YEAR

WW = WORK WEEK

? = ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

9

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

TO-262 Package Outline ^{(Dimensions are shown in millimeters (inches))}

TO-262 Part Marking Information

PART NUMBER

INTERNATIONAL

RECTIFIER LOGO

INTERNATIONAL

RECTIFIER LOGO

FSL3306

OR

PYWW?

YWWP

ASSEMBLY

LOT CODE

ASSEMBLY

LOT CODE

DATE CODE

P = LEAD-FREE

Y = LAST DIGIT OF YEAR

WW = WORK WEEK

Y = LAST DIGIT OF YEAR

WW = WORK WEEK

P = LEAD-FREE

LC LC

? = ASSEMBLY SITE CODE

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

10

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

D²Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

0.368 (.0145)

3.90 (.153)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

11.60 (.457)

11.40 (.449)

1.65 (.065)

24.30 (.957)

15.42 (.609)

23.90 (.941)

15.22 (.601)

TRL

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

4

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

26.40 (1.039)

24.40 (.961)

4

3

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

11

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IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF

Qualification information^†

Industrial

Qualification level

(per JEDEC JESD47F^††guidelines)

TO-220

N/A

Moisture Sensitivity Level

RoHS compliant

D2Pak

TO-262

MS L 1

Yes

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comment

•

Updated data sheet with new IR corporate template.

Updated package outline & part marking on page 8, 9 & 10.

4/24/2014

Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

of

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.


型号：	IRFSL3306
厂家：	Infineon
描述：	The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
文件：	总13页 (文件大小：328K)
中文：	中文翻译
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IRFSL3306 [INFINEON]

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