IRFTS9342PBF [INFINEON]
Industry-Standard TSOP-6 Package; 行业标准TSOP -6封装
| 型号： | IRFTS9342PBF |
| 厂家： | 
Infineon |
| 描述： | Industry-Standard TSOP-6 Package |
| 文件： | 总8页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96411A
IRFTS9342PbF
HEXFET® Power MOSFET
VDS
-30
20
V
V
A
D
1
2
6
5
4
D
D
VGS max
±
RDS(on) max
(@VGS = -10V)
40
m
Ω
Ω
D
RDS(on) max
(@VGS = -4.5V)
Qg typ
3
G
S
66
12
m
TSOP-6
nC
A
Top View
ID
-5.8
(@TA= 25°C)
Applications
l Battery operated DC motor inverter MOSFET
l System/Load Switch
Features and Benefits
Features
Benefits
Industry-Standard TSOP-6 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
results in
⇒
MSL1, Consumer Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Quantity
IRFTS9342TRPbF
TSOP-6
Tape and Reel
3000
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
-30
±20
-5.8
-4.6
-46
V
V
GS
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
A
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
Power Dissipation
2.0
D
D
W
1.3
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Notes through are on page 2
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1
02/29/12
IRFTS9342PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250μA
––– mV/°C Reference to 25°C, ID = -1mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
6.8
–––
–––
V
ΔΒVDSS/ΔTJ
RDS(on)
19
32
40
66
VGS = -10V, ID = -5.8A
GS = -4.5V, ID = -4.6A
mΩ
53
V
VGS(th)
Gate Threshold Voltage
–––
-5.5
–––
–––
–––
–––
–––
12
-2.4
V
VDS = VGS, ID = -25μA
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
-1.0
μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
-150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
-100
nA
100
VGS = 20V
gfs
Qg
–––
–––
–––
–––
S
nC
Ω
VDS = -10V, ID = -4.6A
VDS = -15V
–––
–––
–––
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
1.8
3.1
VGS = -10V
ID = -4.6A
RG
td(on)
–––
–––
–––
–––
–––
–––
–––
–––
17
4.6
13
–––
–––
VDD = -15V, VGS = -10V
tr
–––
–––
–––
–––
–––
–––
ID = -4.6A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
45
RG = 6.8
28
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
595
133
85
VGS = 0V
VDS = -25V
ƒ = 1.0KHz
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
S
–––
–––
-2.0
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
-46
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
20
-1.2
30
V
T = 25°C, I = -4.6A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = -4.6A, VDD = -24V
J F
Qrr
ton
di/dt = 100A/μs
11
17
nC
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
Max.
Units
Rθ
Junction-to-Ambient
–––
62.5
°C/W
JA
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
2
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IRFTS9342PbF
100
10
1
100
10
1
VGS
-10V
VGS
-10V
TOP
TOP
-7.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-7.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM
BOTTOM
-2.8V
-2.8V
1
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
0.1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
1.6
1.4
1.2
1.0
0.8
0.6
I
= -5.8A
D
V
= -10V
GS
T
= 150°C
J
T
3
= 25°C
J
V
= -15V
DS
≤60μs PULSE WIDTH
0.1
1
2
4
5
6
7
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
ds
I = -4.6A
D
iss
gs
gd
12.0
= C
rss
oss
gd
V
V
V
= -24V
= -15V
= -6.0V
= C + C
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
10
0
2
4
6
8
10 12 14 16
1
10
-V , Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFTS9342PbF
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100μsec
10
1
1msec
T
= 25°C
J
10msec
1
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V
, Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
6
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
5
4
3
2
1
0
ID = -25μA
I
= -250μA
D
I
= -1.0mA
D
ID = -10mA
= -1.0A
I
D
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Ambient Temperature (°C)
T
, Temperature ( °C )
A
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFTS9342PbF
100
80
60
40
20
0
220
200
180
160
140
120
100
80
I
= -5.8A
D
Vgs = -4.5V
T = 125°C
J
Vgs = -10V
T
= 25°C
J
60
40
20
2
4
6
8
10 12 14 16 18 20
0
10
20
30
40
50
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
120
100
90
80
70
60
50
40
30
20
10
0
I
D
TOP
-0.91A
-1.4A
BOTTOM -4.6A
100
80
60
40
20
0
0.0001 0.001
0.01
0.10
1
10
25
50
75
100
125
150
Time (sec)
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 15. Typical Power vs. Time
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T *
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
InductorCurrent
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
* Reverse Polarity of D.U.T for P-Channel
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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5
IRFTS9342PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
DRIVER
-VGS
0.01
Ω
t
p
t
p
V
(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
VGS
V
GS
D.U.T.
10%
RG
-
VDD
+
-VGS
90%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
6
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IRFTS9342PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
Y = YEAR
W = WEE K
DATE CODE MARKING INSTRUCTIONS
WW= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
PART NUMBER
WORK
YEAR
Y
WEEK
W
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
LOT
CODE
TOP
PART NUMBER CODE REFERENCE:
A = SI3443DV
B = IRF5800
C = IR F 5850
D = IRF5851
E = IRF5852
F = IRF5801
G = IRF5803
H = IRF5804
I = IRF5805
J = IRF5806
K = IRF5810
N = IRF5802
O = IRLTS6342TRPBF
P = IRFTS8342TRPBF
R = IRFTS9342TRPBF
S = Not applicable
24
25
26
X
Y
Z
WW = (27-52) IF PRECEDED BY A LETTER
WORK
T = IRLTS2242TRPBF
YEAR
Y
WEEK
W
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
K
50
51
52
X
Y
Z
Note: A line above the work week
(as shown here) indicates Lead-Free.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFTS9342PbF
TSOP-6 Tape and Reel Information
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
TSOP-6
(per IP C/JE DE C J-S T D-020D†††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2012
8
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