IRFU024N [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A); 功率MOSFET ( VDSS = 55V , RDS(ON) = 0.075ohm ,ID = 17A )型号: | IRFU024N |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A) |
文件: | 总10页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD- 9.1336A
IRFR/U024N
HEXFET® Power MOSFET
PRELIMINARY
l Ultra Low On-Resistance
l Surface Mount (IRFR024N)
l Straight Lead (IRFU024N)
l Advanced Process Technology
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.075Ω
G
l Fully Avalanche Rated
ID = 17Aꢀ
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
D -Pak
TO -252AA
I-Pak
TO -251AA
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
17
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
12
A
68
PD @TC = 25°C
Power Dissipation
45
W
W/°C
V
Linear Derating Factor
0.30
± 20
71
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
10
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
4.5
5.0
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
3.3
50
Units
RθJC
RθJA
RθJA
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
–––
110
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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1
IRFR/U024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.075
Ω
V
S
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10A
2.0
4.5
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 5.3
––– ––– 7.6
VDS = 55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
IGSS
VGS = -20V
ID = 10A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
4.9 –––
34 –––
19 –––
27 –––
VDD = 28V
ID = 10A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
RD = 2.6Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
nH
pF
G
–––
7.5
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 370 –––
––– 140 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
65 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
17 ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
68
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 56 83
––– 120 180
V
TJ = 25°C, IS = 10A, VGS = 0V
ns
TJ = 25°C, IF = 10A
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRFZ24N data and test conditions.
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
2
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IRFR/U024N
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 175°C
T
= 25°C
C
C
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
100
I
= 17A
D
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25°C
TJ = 175°C
10
V
DS = 25V
V
= 10V
20µs PU LSE W ID TH
GS
1
A
10 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
4
5
6
7
8
9
T
J
, Junction Tem perature (°C)
VG S , G ate-to-Source Voltage (V )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U024N
700
20
16
12
8
V
C
C
C
= 0V,
f = 1M Hz
I
= 10A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
= 44V
= 28V
DS
DS
600
500
400
300
200
100
0
rss
oss
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
T
= 175°C
J
T
= 25°C
J
10µs
100µs
1m s
T
T
= 25°C
= 175°C
Single Pulse
C
J
V
= 0V
10m s
G S
A
1
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U024N
RD
20
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
A
175
0
25
50
75
100
125
150
T
, Case Tem perature (°C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
0.01
DM
0.1
t
S INGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. D uty factor D =
t
/ t
1
2
2. Peak T = P
x Z
+ T
C
DM
J
thJC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U024N
140
120
100
80
I
D
TOP
4.2A
7.2A
10A
15V
BOTTOM
DRIVER
L
V
D S
D.U.T
R
G
+
-
60
V
D D
I
A
AS
20V
40
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test
20
Circuit
V
= 25V
50
DD
0
A
175
25
75
100
125
150
Starting T , Junction Tem perature (°C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U024N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFR/U024N
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
0.51 (.020)
MIN.
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M
A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
EXA M PLE : THIS IS AN IRFR120
W ITH ASSEM BLY
A
INTERNATIO NAL
RE CTIFIE R
LO GO
LOT CODE 9U1P
FIRST PO RTIO N
OF PA RT NUM BER
IRFR
120
1P
9U
ASSEMB LY
SECO ND PORTION
O F PART NUM BER
LO T
CODE
8
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IRFR/U024N
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
- A -
0.58 (.023)
0.46 (.018)
1.27 (.050)
5.46 (.215)
0.88 (.035)
5.21 (.205)
LEAD ASSIGN M ENTS
1 - GATE
4
2 - D RAIN
6.45 (.245)
5.68 (.224)
3 - SOU RC E
4 - D RAIN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
- B -
N OTES:
1
2
3
4
D IM ENS ION ING & TOLERAN C IN G PER AN SI Y14.5M , 1982.
C ONTROLLIN G DIM ENSION : IN CH.
2.28 (.090)
1.91 (.075)
9.65 (.380)
8.89 (.350)
C ONFOR MS TO JEDEC OUTLIN E TO-252AA.
D IM ENS ION S SHOW N AR E BEFORE SOLD ER D IP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.76 (.030)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.090)
2X
Part Marking Information
TO-251AA(I-PARK)
EXAM PLE : THIS IS AN IRFU120
W ITH ASSEM BLY
INTE RNATIONAL
RECTIFIER
LO GO
LO T CODE 9U1P
FIRST PO RTION
OF PART NUM BER
IRFU
120
1P
9U
SECOND PO RTIO N
OF PART NUM B ER
AS SEM BLY
LOT
CO DE
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9
IRFR/U024N
Tape & Reel Information
TO-252AA
Dimensions are shown in millimeters (inches)
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIR ECTIO N
FEED DIR ECTIO N
N O TES :
1. C O NTRO LLING D IM EN SIO N : M ILLIM ETER.
2. ALL D IM EN SIO N S ARE SH O W N IN M ILLIM ETERS ( INC HES ).
3. O U TLINE C O N FO RM S TO EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO N FO RM S TO EIA-481.
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Data and specifications subject to change without notice.
4/98
10
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