IRFU3412PBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET型号: | IRFU3412PBF |
厂家: | Infineon |
描述: | SMPS MOSFET |
文件: | 总10页 (文件大小:225K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95498A
IRFR3412PbF
IRFU3412PbF
HEXFET® Power MOSFET
SMPS MOSFET
Applications
VDSS
RDS(on) max
ID
l Switch Mode Power Supply (SMPS)
l Motor Drive
100V
0.025Ω
48A
l
Bridge Converters
l
All Zero Voltage Switching
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
D-Pak
IRFR3412
I-Pak
IRFU3412
Absolute Maximum Ratings
Parameter
Max.
48
34
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
190
PD @TC = 25°C
Power Dissipation
140
W
W/°C
V
Linear Derating Factor
0.95
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
6.4
V/ns
°C
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
300(1.6mm from case )
10 lbf•in (1.1N•m)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
(Body Diode)
––– ––– 48
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 190
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
––– ––– 1.3
––– 68 100
––– 160 240
––– 4.5 6.8
V
TJ = 25°C, IS = 29A, VGS = 0V
TJ = 125°C, IF = 29A
ns
Qrr
IRRM
ton
nC di/dt = 100A/µs
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
12/03/04
IRFR/U3412PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.025
3.5 ––– 5.5
Ω
V
VGS = 10V, ID = 29A
VDS = VGS, ID = 250µA
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 95V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
V
GS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
25 ––– –––
––– 59
Conditions
gfs
S
VDS = 50V, ID = 29A
ID = 29A
Qg
89
32
26
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
21
17
nC VDS = 50V
VGS = 10V,
19 –––
68 –––
44 –––
37 –––
VDD = 50V
ID = 29A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3430 –––
––– 270 –––
––– 150 –––
––– 1040 –––
––– 170 –––
––– 270 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
pF
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
–––
Max.
160
29
Units
mJ
EAS
IAR
A
EAR
Repetitive Avalanche Energy
14
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.05
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
110
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See Fig. 11)
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 0.38mH, RG = 25Ω,
IAS = 29A, (See Figure 12a)
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
ISD ≤ 29A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
IRFR/U3412PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
0.1
0.01
4.5V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 175
J
C
T = 25
C
J
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
48A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
°
T = 175 C
J
°
T = 25 C
J
V
= 25V
DS
V
= 10V
GS
20µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4.0
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature
( C)
V
, Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFR/U3412PbF
20
16
12
8
100000
V
= 0V,
f = 1 MHZ
I = 29A
GS
D
C
= C
+
C
,
C
iss
SHORTED
gs
gd
ds
V
= 80V
DS
VDS= 50V
VDS= 20V
C
= C
gd
rss
C
= C + C
oss
ds gd
10000
1000
100
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
1
T
= 25°C
1.5
J
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.0
0.5
1.0
2.0
2.5
3.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFR/U3412PbF
RD
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
( C)
T
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFR/U3412PbF
300
250
200
150
100
50
15V
I
D
TOP
12A
21A
29A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFR/U3412PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
IRFR/U3412PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 9 = 1999
WE EK 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
AS S E MB L Y
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WEE K 16
A= ASSEMBLY SITE CODE
8
www.irf.com
IRFR/U3412PbF
I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
WIT H AS S E MB LY
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 19
IRFU120
919A
78
LOT CODE 5678
AS S EMBLED ON WW 19, 1999
56
IN THE ASSEMBLY LINE "A"
LINE A
AS S E MB L Y
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
56
78
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE E K 19
A = AS S E MB L Y S I T E CODE
www.irf.com
9
IRFR/U3412PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
www.irf.com
相关型号:
©2020 ICPDF网 联系我们和版权申明