IRFZ22-006PBF [INFINEON]
14A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET;
| 型号： | IRFZ22-006PBF |
| 厂家： | 
Infineon |
| 描述： | 14A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件： | 总1页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFZ22-009PBF
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ22-010PBF
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ22-011PBF
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ22-012
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ22-012PBF
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ22-013
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFZ22-013PBF
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFZ22A16A
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
IRFZ22AJ
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
IRFZ22C
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
IRFZ22D1
Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
©2020 ICPDF网 联系我们和版权申明