IRFZ24-024PBF [INFINEON]

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;
IRFZ24-024PBF
型号: IRFZ24-024PBF
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

文件: 总6页 (文件大小:166K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRFZ24-029PBF

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON

IRFZ24-030

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON

IRFZ24-031

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON

IRFZ24A

ADVANCED POWER MOSFET
FAIRCHILD

IRFZ24AJ69Z

Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD

IRFZ24F

Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
INFINEON

IRFZ24FPBF

Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON

IRFZ24L

HEXFET Power MOSFET
INFINEON

IRFZ24L

Power MOSFET
VISHAY

IRFZ24LPBF

Power MOSFET
VISHAY

IRFZ24N

N-channel enhancement mode TrenchMOS transistor
NXP

IRFZ24N

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
INFINEON