IRFZ44VPBF [INFINEON]
Ultra Low On-Resistance; 超低导通电阻
| 型号： | IRFZ44VPBF |
| 厂家： | 
Infineon |
| 描述： | Ultra Low On-Resistance |
| 文件： | 总8页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94826
IRFZ44VPbF
HEXFET® Power MOSFET
ꢀ Advanced Process Technology
ꢀ Ultra Low On-Resistance
ꢀ Dynamic dv/dt Rating
D
VDSS = 60V
ꢀ 175°C Operating Temperature
ꢀ Fast Switching
ꢀ Fully Avalanche Rated
RDS(on) = 16.5mΩ
G
ꢀ Optimized for SMPS Applications
ꢀ Lead-Free
ID = 55A
S
Description
AdvancedHEXFET® PowerMOSFETsfromInternational
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETpowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢀ
55
39
A
220
PD @TC = 25°C
Power Dissipation
115
W
W/°C
V
Linear Derating Factor
0.77
± 20
115
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢁ
Avalanche Currentꢀ
mJ
A
55
EAR
dv/dt
TJ
Repetitive Avalanche Energyꢀ
Peak Diode Recovery dv/dt ꢂ
Operating Junction and
11
mJ
V/ns
4.5
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
1.3
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
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1
11/10/03
IRFZ44VPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 16.5 mΩ VGS = 10V, ID = 31A ꢀ
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 31Aꢀ
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
24
––– –––
S
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 67
––– ––– 18
––– ––– 25
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 51A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
13 –––
97 –––
40 –––
57 –––
VDD = 30V
ID = 51A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 0.6Ω, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
nH
G
–––
7.5
Ciss
Coss
Crss
Input Capacitance
––– 1812 –––
––– 393 –––
––– 103 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
pF
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
55
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)ꢀ
integral reverse
––– ––– 220
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 2.5
––– 70 105
––– 146 219
V
TJ = 25°C, IS = 51A, VGS = 0V ꢁ
ns
TJ = 25°C, IF = 51A
Qrr
ton
nC di/dt = 100A/µs ꢁ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Repetitive rating; pulse width limited by
ꢃ ISD ≤ 51A, di/dt ≤ 227A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
ꢁ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢂ Starting TJ = 25°C, L = 89µH
RG = 25Ω, IAS = 51A. (See Figure 12)
2
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IRFZ44VPBF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM4.5V
4.5V
4.5V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 175 C
J
0.1
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
55A
I =
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
10
1
°
T = 175 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4
5
6
7
8
9
10 11
12
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFZ44VPbF
20
16
12
8
4000
I =
D
51A
V
C
= 0V,
f = 1 MHZ
V
V
V
= 48V
= 30V
= 12V
GS
DS
DS
DS
= C + C , C SHORTED
is
gs
gd ds
C
= C
rss
gd
C
= C + C
oss
ds gd
3000
2000
1000
0
Ciss
4
Coss
Crss
0
0
20
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100
10
1
°
T = 25 C
J
100us
1ms
1
10ms
°
T = 25 C
C
J
°
T = 175 C
V
= 0 V
Single Pulse
GS
0.1
0.2
1
10
100
1000
0.7
1.2
1.7
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFZ44VPBF
RD
VDS
60
50
40
30
20
10
0
VGS
10V
D.U.T.
RG
+
-
VDD
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
10%
T , Case Temperature( C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
P
2
DM
0.05
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFZ44VPbF
250
200
150
100
50
I
D
15V
TOP
21A
36A
BOTTOM 51A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFZ44VPBF
Peak Diode Recovery dv/dt Test Circuit
+
ꢀ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ44VPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
- B -
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/03
8
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