IRG4BC15MD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.88V ， @ VGE = 15V ， IC = 8.6A ）
| 型号： | IRG4BC15MD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A) |
| 文件： | 总10页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 94151A
IRG4BC15MD
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Fast IGBT
C
Features
• Rugged: 10µsec short circuit capable at VGS = 15V
VCES = 600V
• Low VCE(on) for 4 to 10kHz applications
• IGBT co-packaged with ultra-soft-recovery anti-parallel
diodes
VCE(on) typ. = 1.88V
G
• Industry standard TO-220AB package
Benefits
@VGE = 15V, IC = 8.6A
E
• Best Value for Appliance and Industrial applications
• Offers highest efficiency and short circuit capability for
n-channel
intermediate applications
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance and Industrial applications up to
1HP
• High noise immune "Positive Only" gate drive - Negative
bias gate drive not necessary
• For Low EMI designs - requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Drive IC's
• Allows simpler gate drive
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
14
IC @ TC = 100°C
8.6
ICM
28
A
ILM
28
IF @ TC = 100°C
4.0
tsc
12
µs
A
IFM
VGE
16
± 20
V
P
D @ TC = 25°C
Maximum Power Dissipation
49
W
PD @ TC = 100°C Maximum Power Dissipation
19
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
2.7
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
–––
7.0
°C/W
0.50
–––
80
–––
2 (0.07)
–––
g (oz)
www.irf.com
1
5/25/01
IRG4BC15MD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.65 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.88 2.3
––– 2.6 –––
IC = 8.6A
VGE = 15V
V
IC = 14A
––– 2.1 –––
IC = 8.6A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
4.0 ––– 6.5
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.3 3.4 –––
––– ––– 250
––– ––– 1400
––– 1.5 1.8
––– 1.4 1.7
S
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 4.0A
VFM
IGES
Diode Forward Voltage Drop
V
IC = 4.0A, TJ = 150°C
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– 46 –––
IC = 8.6A
Qge
Qgc
td(on)
tr
––– 4.2 –––
––– 15 –––
––– 21 –––
––– 38 –––
––– 540 810
––– 350 530
––– 0.32 –––
––– 1.93 –––
––– 2.25 3.6
––– 20 –––
––– 42 –––
––– 650 –––
––– 590 –––
––– 3.0 –––
––– 7.5 –––
––– 340 –––
––– 35 –––
––– 8.8 –––
nC VCC = 400V
VGE = 15V
TJ = 25°C
ns
IC = 8.6A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
ns
TJ = 150°C,
IC = 8.6A, VCC = 480V
VGE = 15V, RG = 75Ω
Energy losses include "tail" and
td(off)
tf
Turn-Off Delay Time
Fall Time
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
ƒ = 1.0MHz
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
––– 28
––– 38
42
57
IF = 4.0A
Irr
Diode Peak Reverse Recovery Current ––– 2.9 5.2
––– 3.7 6.7
VR = 200V
di/dt 200A/µs
Qrr
Diode Reverse Recovery Charge
––– 40
60
nC TJ = 25°C
TJ = 125°C
––– 70 110
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
––– 280 ––– A/µs TJ = 25°C
––– 240 ––– TJ = 125°C
IRG4BC15MD
10
8
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
6
Power Dissipation = 11W
60% of rated
voltage
4
Ideal diodes
2
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
100
10
°
T = 150 C
J
°
T = 150 C
J
1
1
°
T = 25 C
J
°
T = 25 C
J
V
= 15V
V
= 50V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
0.1
0.1
0.1
5.0
1
10
10.0
15.0 20.0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRG4BC15MD
15
12
9
4.0
3.0
2.0
1.0
V
= 15V
GE
80µs PULSE WIDTH
I
= 17A
C
I
I
= 9.0A
= 4.3A
C
C
6
3
0
-60 -40 -20
0
20 40 60 80 100 120 140
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
T
J
, Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRG4BC15MD
500
400
300
200
100
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 9.0A
GE
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
4
C
C
oes
res
0
1
10
100
0
10
20
30
40
50
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
2.30
2.20
2.10
2.00
100
V
V
= 480V
= 15V
CC
GE
R
= 75Ω
G
V
V
= 15V
GE
T = 25°C
J
= 480V
CC
I
= 8.6A
C
I
= 17A
C
10
I
= 9.0A
= 4.3A
C
I
C
1
0.1
0
10
20
R
30
40
50
60
70
80
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate Resistance (
)
Ω
T , Junction Temperature (°C)
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
IRG4BC15MD
100
10
1
10.0
V
T
= 20V
GE
= 125°
R
= 75Ω
G
TJ = 150°C
J
V
= 15V
GE
CC
8.0
6.0
4.0
2.0
0.0
V
= 480V
SAFE OPERATING AREA
1
10
100
1000
2
4
6
8
10
12
14
16
18
V
, Drain-to-Source Voltage (V)
I
, Collector Current (A)
DS
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
10
1
T
J
= 150°C
= 125°C
T
J
T
=
25°C
J
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - VFM ( )
V
IRG4BC15MD
50
45
40
35
30
25
20
14
12
10
8
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 8.0A
= 4.0A
F
F
I
I
I
= 8.0A
= 4.0A
F
F
6
4
2
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I
I
= 8.0A
= 4.0A
I
I
= 8.0A
= 4.0A
F
F
F
F
120
80
40
0
A
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
IRG4BC15MD
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
90% Ic
D.U.T.
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
t1
Eoff =
VceIcdt
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RM S
5% Vce
tr
td(on)
t2
VceIcdt
t1
E on =
t2
t4
Erec = V
Vd Ic dt
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
IRG4BC15MD
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
IRG4BC15MD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
VCC=80%(VCES), VGE=20V, L=10µH, RG = 75Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline — TO-220AB
10.54 (.415)
10.29 (.405)
N O TE S :
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
1
D IM E N S IO N S & T O LE R A N C IN G
4.69 (.185)
4.20 (.165)
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H ES ).
C O N FO R M S TO JE D E C O U TLIN E
T O -220AB .
1.32 (.052)
1.22 (.048)
- A -
2
3
6.47 (.255)
6.10 (.240)
4
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LE A D A S S IG N M E N T S
1
2
3
1
2
3
4
- G A TE
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
3.96 (.160)
3.55 (.140)
3 X
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3 X
3 X
1.40 (.055)
1.15 (.045)
3 X
0.36 (.014)
M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s)
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/01
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