IRG4BC20U [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.85V ， @ VGE = 15V ， IC = 6.5A ）
| 型号： | IRG4BC20U |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
| 文件： | 总8页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91448D
IRG4BC20U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES =600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCE(on) typ. = 1.85V
G
@VGE = 15V, IC = 6.5A
E
• Industry standard TO-220AB package
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
13
IC @ TC = 100°C
6.5
A
ICM
52
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
52
VGE
20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5.0
mJ
PD @ TC = 25°C
60
24
W
°C
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
2.1
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.50
–––
80
–––
2.0 (0.07)
–––
g (oz)
www.irf.com
1
4/17/2000
IRG4BC20U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
1.4
—
—
—
—
0.69
V/°C VGE = 0V, IC = 1.0mA
1.85 2.1
IC = 6.5A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.27
1.87
—
—
—
IC = 13A
V
See Fig.2, 5
IC = 6.5A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
4.3
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
100 nA VGE = 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
27 41
4.5 6.8
Conditions
IC = 6.5A
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
10
21
13
16
—
—
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
FallTime
86 130
120 180
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.10
0.12
—
—
mJ
ns
E
ts
0.22 0.4
td(on)
tr
td(off)
tf
20
14
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 13, 14
Turn-Off Delay Time
FallTime
190
140
0.42
7.5
530
39
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
7.4
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4BC20U
25
20
15
10
5
F or both:
T ria ngu lar w ave :
D uty cycle: 50%
I
T
T
=
sink
125°C
= 90°C
J
G ate drive as specifie d
Pow er D is sipa tion 13 W
=
C la mp voltage:
80% of rated
S q u a re w ave :
60% of rated
v oltage
I
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
10
1
100
TJ = 25°C
TJ = 150°C
TJ = 1 5 0°C
10
TJ = 25 °C
1
V
= 1 0 V
C C
VG E = 15V
5 µs P U LS E W ID TH
20µs PULSE WIDTH
A
0.1
0.1
4
6
8
10 12
0.1
1
10
V
, Ga te -to-Em itter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
G E
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
A
www.irf.com
3
IRG4BC20U
14
12
10
8
2.6
2.2
1.8
1.4
1.0
V
= 15V
G E
V G E = 1 5 V
80 µ s P U LS E W IDTH
C
I
= 1 3 A
IC = 6.5 A
6
4
C
I
= 3 .3A
2
0
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Case Temperature (°C)
C
T
, Ju nction Tem perature (°C )
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. D uty factor D
=
t
/ t
1
Z
2
2. P eak
0.1
T
=
P
x
+ T
C
DM
J
th JC
1
0.01
0.00001
0.0001
0.001
0.01
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
4
IRG4BC20U
1000
800
600
400
200
0
20
16
12
8
V
C
C
C
= 0V,
= C
f = 1MHz
VC E = 4 0 0V
I C = 6.5 A
G E
ies
+ C
+ C
,
C
SHORTE D
ge
gc
ce
= C
res
oes
gc
ce
= C
gc
C
C
ies
o es
C
re s
4
A
A
30
0
1
10
100
0
5
10
15
20
25
V
, C olle ctor-to-Em itte r Voltage (V)
Q , Total Gate C harge (n C )
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
0.23
1
V C C = 4 8 0V
V G E = 1 5 V
IC
= 13 A
T J
= 2 5 °C
I C = 6.5 A
I C = 6 .5 A
0.22
0.21
0.20
C
I
= 3 .3 A
0.1
R G = 5 0
Ω
V G E = 1 5 V
C C = 4 8 0 V
V
A
A
100 120 140 160
0.01
-60
-40
-20
0
20
40
60
80
0
10
20
30
40
50
60
T
, Ju nctio n Tem pe ra tu re (°C )
R
, G ate R esistan ce (
)
Ω
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
www.irf.com
5
IRG4BC20U
1.0
1000
100
10
V
T
= 20V
G E
R G = 50
Ω
= 125°C
T
V
V
J
= 1 50 °C
= 48 0 V
= 15 V
J
C C
G E
0.8
0.6
0.4
0.2
0.0
SAFE OPE RATING A REA
1
A
0.1
0
2
4
6
8
10
12
14
1
10
100
1000
I
, C olle ctor-to-Em itte r C u rrent (A)
V
, Collector-to-Emitter Voltage (V)
C
C E
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
www.irf.com
IRG4BC20U
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
www.irf.com
7
IRG4BC20U
Case Outline and Dimensions TO-220AB
0.55 (.022)
0.46 (.018)
3 X
2.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
www.irf.com
相关型号：
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
INFINEON
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
INFINEON
IRG4BC20UD-STRLPBF
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG4BC20UD-STRRPBF
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG4BC20UDS
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
INFINEON
©2020 ICPDF网 联系我们和版权申明