IRG4PC30FDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT; 超快软恢复二极管快速CoPack 1GBT绝缘栅双极晶体管
| 型号： | IRG4PC30FDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT |
| 文件： | 总11页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95556
IRG4PC30FDPbF
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
VCES = 600V
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
Generation 3
IGBT co-packaged with HEXFREDTM ultrafast,
E
ultra-soft-recovery anti-parallel diodes for use in
n-channel
bridge configurations
Industry standard TO-247AC package
Lead-Free
Benefits
Generation -4 IGBT's offer highest efficiencies available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
31
Units
V
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
I
IC @ TC = 100°C
17
ICM
120
120
12
A
ILM
IF @ TC = 100°C
IFM
120
± 20
100
42
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating
W
PD @ TC = 100°C
TJ
Junction
and-55
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Typ.
Max.
1.2
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
2.5
0.24
40
°C/W
g (oz)
6 (0.21)
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1
7/26/04
IRG4PC30FDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.69 V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage 1.59 1.8
1.99
IC = 17A
VGE = 15V
V
IC = 31A
See Fig. 2, 5
1.70
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -11 mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
6.1
10
S
VCE = 100V, IC = 17A
ICES
Zero Gate Voltage Collector Current
250
2500
1.4 1.7
1.3 1.6
µA
VGE = 0V, VCE = 600V
V
GE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
51
7.9
19
77
12
28
IC = 17A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
42
26
230 350
160 230
0.63
1.39
2.02 3.9
42
27
310
310
3.2
13
1100
74
14
IC = 17A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 9, 10, 11, 18
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 17A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail" and
td(off)
tf
Turn-Off Delay Time
Fall Time
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
VCC = 30V
See Fig. 7
= 1.0MHz
42
80 120
Diode Peak Reverse Recovery Current 3.5 6.0
5.6 10
60
TJ = 25°C See Fig.
ns
A
TJ = 125°C
14
IF = 12A
Irr
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
15
See Fig.
16
VR = 200V
Qrr
Diode Reverse Recovery Charge
80 180
220 600
180
120
nC
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
See Fig.
17
A/µs
2
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IRG4PC30FDPbF
25
20
15
10
5
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 24W
60% of rated
voltage
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
10
1000
T = 25°C
J
100
10
1
TJ
= 150°C
TJ = 150°C
TJ = 25°C
VCC = 50V
5µs PULSE WIDTH
VGE = 15V
20µs PULSE WIDTH
A
A
1
5
6
7
8
9
10
11
12
13
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4PC30FDPbF
40
2.5
2.0
1.5
1.0
V
= 15V
GE
VGE = 15V
80µs PULSE WIDTH
IC = 34A
30
20
10
0
IC = 17A
IC = 8.5A
A
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Case Temperature (°C)
C
T , Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
0.02
t
2
SINGLE PULSE
0.01
Notes:
(THERMAL RESPONSE)
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC30FDPbF
2000
1600
1200
800
400
0
20
16
12
8
VGE = 0V
f = 1 MHz
VCE = 400V
IC = 17A
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
oes
4
C
res
A
A
0
1
10
100
0
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
10
2.20
2.10
2.00
1.90
1.80
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 17A
IC = 34A
IC = 17A
IC = 8.5A
1
RG = 23
VGE = 15V
Ω
VCC = 480V
A
A
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
20
40
60
80
T , Junction Temperature (°C)
R
, Gate Resistance (
)
Ω
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC30FDPbF
8.0
1000
100
10
V = 20V
GE
RG = 23
Ω
T
= 125°C
TJ = 150°C
VCC = 480V
VGE = 15V
J
6.0
4.0
2.0
0.0
SAFE OPERATING AREA
A
1
1
10
100
1000
0
10
20
30
40
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
CE
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
T = 150°C
J
T = 125°C
J
10
T = 25°C
J
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PC30FDPbF
100
10
1
160
120
80
40
0
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 24A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
I
= 6.0A
F
I
= 6.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
1000
I
= 6.0A
F
I
= 24A
F
I
= 12A
F
I
= 12A
F
200
100
I
= 24A
F
I
= 6.0A
F
0
100
10
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4PC30FDPbF
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff = Vce ic dt
∫
t1
Fig. 18a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
I
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PC30FDPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e.
18 '
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20.
Figure 19.
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9
IRG4PC30FDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
035H
57
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 0 = 2000
WE EK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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