IRG4PC40UD-EPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG4PC40UD-EPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：3089K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94937
IRG4PC40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz
in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-
soft recovery anti-parallel diodes for use in bridge
configurations
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Generation -4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTsꢀ
Minimized recovery characteristics require less/no snubbing
• Designed to be a drop-in replacement for equivalent
industry-standard Generation 3 IR IGBTs
www.irf.com
1
1/12/04
IRG4PC40UDPbF
2
www.irf.com
IRG4PC40UDPbF
www.irf.com
3
IRG4PC40UDPbF
4
www.irf.com
IRG4PC40UDPbF
www.irf.com
5
IRG4PC40UDPbF
6
www.irf.com
IRG4PC40UDPbF
www.irf.com
7
IRG4PC40UDPbF
8
www.irf.com
IRG4PC40UDPbF
www.irf.com
9
IRG4PC40UDPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -Gate1-Gate
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
2 - Drain2 - Collector
3 - Source 3 - Emitter
2.60 (.102)
2.20 (.087)
0.25 (.010)
A
C
M
S
5.45 (.215)
4 - Drain
4 - Collector
3.40 (.133)
3.00 (.118)
2X
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
IRFPE30
035H
57
56
DATE CODE
YEAR 0 = 2000
WE EK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRG4PC40W
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
INFINEON
IRG4PC40W-E
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC40W-EPBF
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC50F
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
INFINEON
IRG4PC50FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
INFINEON
IRG4PC50FD-E
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC50FD-EPBF
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明