IRG4PC60FPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT; 绝缘栅双极晶体管速度快IGBT
| 型号： | IRG4PC60FPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT |
| 文件： | 总9页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95566
IRG4PC60FPbF
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES=600V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
VCE(on)typ. =1.50V
G
Industry standard TO-247AC package.
Lead-Free
@VGE = 15V, IC = 60A
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed for best performance when used with
IR Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
90
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
60
A
ICM
120
120
± 20
200
520
210
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
VGE
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
PD @ TC = 25°C
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.24
40
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
6 (0.21)
g (oz)
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1
07/15/04
IRG4PC60FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
V
V
Emitter-to-Collector Breakdown Voltage 16
3.0
36
0.13
V/°C VGE = 0V, IC = 1.0mA
IC = 60A
1.5 1.8
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.7
1.5
IC = 90A
V
See Fig.2, 5
IC = 60A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
69
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
S
V
CE = 100V, IC = 60A
VGE = 0V, VCE = 600V
250
2.0
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
1000
IGES
Gate-to-Emitter Leakage Current
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 40A
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
290 340
40 47
100 130
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
42
66
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
FallTime
310 360
170 220
IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
0.30
4.6
mJ
ns
Total
Switching
Delay
Loss
Time
4.96.3
39
td(on)
tr
td(off)
tf
Turn-On
J =T150°C,
RiseTime
66
IC = 60A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 13, 14
Turn-Off Delay Time
FallTime
470
300
8.8
13
Ets
Total Switching Loss
mJ
nH
LE
Internal Emitter Inductance
Input Capacitance
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
6050
360
66
Output Capacitance
pF
VCC = 30V
= 1.0MHz
See Fig. 7
Reverse Transfer Capacitance
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
VCC = 80%(VCES), VGE = 20V, L = TBD µH,
RG = 5.0Ω. (See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC60FPbF
160
120
80
40
0
Square wave:
Triangular wave:
60% of rated
voltage
Clamp voltage:
80% of rated
Ideal diodes
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
T
= 150°C
100
10
J
100
10
T
= 150°C
J
1
1
T
= 25°C
T
= 25°C
J
J
0.1
0.01
0.1
0.01
V
= 10V
V
= 15V
CC
5µs PULSE WIDTH
GE
20µs PULSE WIDTH
4
5
6
7
8
9
10
11
0.0
1.0
2.0
3.0
4.0
5.0
V
Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE,
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PC60FPbF
3.0
2.0
1.0
100
90
80
70
60
50
40
30
20
10
0
V
= 15V
GE
80µs PULSE WIDTH
V
= 15V
GE
I
= 120A
C
I
= 60A
= 30A
C
I
C
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
, Junction Temperature (°C)
, Case Temperature (°C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
P
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
0.01
1
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T = P
x
Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC60FPbF
100000
10000
1000
100
20
15
10
5
V
= 0V,
f = 1 MHZ
V
I
= 400V
= 40A
CC
C
GE
C
= C + C
,
C
SHORTED
ies
ge gc
ce
C
= C
res
ce
C
= C + C
ce gc
oes
Cies
Coes
Cres
10
0
0
100
200
300
400
500
0
50
100
150
200
250
300
Q
, Total Gate Charge (nC)
V
(V)
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
100
8.00
7.00
6.00
5.00
4.00
V
V
= 480V
= 15V
Ω
= 5.0
R
CC
GE
G
V
V
= 15V
GE
CC
T = 25°C
= 480V
J
I
= 120A
I
= 60A
C
C
10
I
= 60A
= 30A
C
I
C
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
T , Junction Temperature (°C)
R
, Gate Resistance (
)
J
Ω
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4PC60FPbF
30.0
1000
100
10
V
T
= 20V
Ω
= 5.0
TJ = 150°C
R
GE
= 125°
G
J
V
= 15V
GE
CC
V
= 480V
20.0
10.0
0.0
SAFE OPERATING AREA
1
30
50
70
90
110
130
0.1
1
10
100
1000
I , Collector Current (A)
V
DS
, Drain-to-Source Voltage (V)
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4PC60FPbF
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
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7
IRG4PC60FPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S EMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
035H
57
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLYLINE "H"
56
DAT E CODE
YEAR 0 = 2000
WEEK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRG4PC60U-EP
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
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