IRG4RC20F [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.82V ， @ VGE = 15V ， IC = 12A）
| 型号： | IRG4RC20F |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A) |
| 文件： | 总8页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91731A
IRG4RC20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES = 600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation IGBTs.
VCE(on) typ. = 1.82V
G
@VGE = 15V, IC = 12A
• Industry standard TO-252AA package
• Combines very low VCE(on) with low switching
losses
E
N-channel
Benefits
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating
D-Pak
TO-252AA
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
22
IC @ TC = 100°C
12
A
ICM
44
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
44
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5.0
mJ
PD @ TC = 25°C
66
26
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.9
Units
°C/W
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
–––
50
0.3 (0.01)
–––
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
2/22/01
IRG4RC20F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
0.72
V/°C VGE = 0V, IC = 1.0mA
IC = 12A
1.82 2.1
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.42
2.04
—
—
—
IC = 22A
V
See Fig.2, 5
IC = 12A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
5.2 7.75
—
S
VCE = 100V, IC = 12A
VGE = 0V, VCE = 600V
—
—
—
—
—
—
—
—
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
27 40
Conditions
IC = 12A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
4.8 6.8
11.4 17
nC VCC = 400V
VGE = 15V
See Fig. 8
26
24
—
—
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
194 290
226 340
IC = 12A, VCC = 480V
VGE = 15V, RG = 50Ω
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.19
0.92
—
—
Energy losses include "tail"
mJ See Fig. 9, 10, 14
1.11 1.4
td(on)
tr
td(off)
tf
25
26
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 12A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
263
443
1.89
7.5
540
37
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ See Fig. 11, 14
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
7.0
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
ꢀ
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4RC20F
30
20
10
0
For both:
Triangular wave:
Duty cycle: 50%
T
T
= 125°C
= 90°C
J
sink
Gate drive as specified
Power Dissipation = 15W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
°
T = 150 C
J
10
°
T = 25 C
J
V
= 50V
CC
5µs PULSE WIDTH
1
6
8
10
12 14
V
, Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4RC20F
3.0
2.0
1.0
25
V
= 15V
GE
80 us PULSE WIDTH
I
= 18A
C
20
15
10
5
I
I
=
9A
C
= 4.5A
C
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
, Junction Temperature ( C)
°
, Case Temperature ( C)
T
T
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4RC20F
1000
800
600
400
200
0
20
15
10
5
V
= 0V,
f = 1MHz
C
V
I
= 400V
= 12A
GE
CC
C
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
oes
ce
C
ies
C
oes
C
res
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
10
0.72
50Ω
= 15V
= 480V
R
V
=
V
V
T
= 480V
G
GE
CC
GE
J
= 15V
°
V
CC
= 25
C
I
=
A
24
C
I
= 9.0A
0.71
0.70
0.68
0.67
0.66
C
I
I
=
=
A
A
12
6
C
1
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R
G
, Gate Resistance
( Ω )
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
JunctionTemperature
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5
IRG4RC20F
100
10
1
5.0
V
T
= 20V
R
T
=
50 Ω
G
J
GE
J
= 125oC
°
= 150 C
V
V
= 480V
= 15V
GE
CC
4.0
3.0
2.0
1.0
0.0
SAFE OPERATING AREA
10
1
100
1000
5
10
15
20
25
V
, Collector-to-Emitter Voltage (V)
I
, Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
L
D.U.T.
480V
4 X IC@25°C
V
*
RL =
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
6
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IRG4RC20F
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
)
o ff
ts
o n
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
LEAD ASSIGNMENTS
1.02 (.040)
1.64 (.025)
1 - GATE
1
2
3
2 - COLLECTOR
0.51 (.020)
MIN.
3 - EMITTER
- B -
4 - COLLECTOR
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M
A M B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIM ENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP M AX. +0.16 (.006).
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7
IRG4RC20F
D-Pak (TO-252AA) Tape & Reel Information
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
FEED DIRECTIO N
NO T ES :
1. CO NT RO LLING DIM EN SIO N : M ILLIM ET ER.
2. ALL DIM EN SIO NS ARE SH O W N IN M ILLIM ETERS ( INC HES ).
3. O UTLINE CO N FO RM S T O EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO NFO RM S TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 2/01
8
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