IRG8P50N120KDPBF_15 [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRG8P50N120KDPBF_15 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总11页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
C
IC = 50A, TC =100°C
tSC 10µs, TJ(max) = 150°C
CE(ON) typ. = 1.7V @ IC = 35A
G
E
V
IRG8P50N120KDPbF
IRG8P50N120KD‐EPbF
TO‐247AD
n-channel
TO‐247AC
Applications
G
Gate
C
E
• Industrial Motor Drive
• UPS
Collector
Emitter
• Solar Inverters
• Welding
Features
Benefits
Benchmark Low VCE(ON)
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Environmentally friendly
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Quantity
IRG8P50N120KDPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
IRG8P50N120KD-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (see fig. 2)
1200
80
50
V
105
ILM
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
140
45
25
140
±30
350
140
A
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
V
W
Maximum Power Dissipation
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.36
0.83
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
–––
RJA
1
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
1200
—
—
0.93
—
—
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 2mA (25°C-150°C)
—
—
5.0
1.7
2.0
—
2.0
—
6.5
V
IC = 35A, VGE = 15V, TJ = 25°C
IC = 35A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 1.4mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-16
—
mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
20
1
1.2
—
2.1
2.4
—
35
—
±300
2.7
—
S
µA
V
V
CE = 50V, IC = 35A, PW = 20µs
GE = 0V, VCE = 1200V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 1200V, TJ = 150°C
mA
nA VGE = ±30V
V
IF = 35A
IF = 35A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
210
10
315
15
205
—
—
—
—
—
—
—
IC = 35A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 600V
135
2.3
1.9
4.2
35
IC = 35A, VCC = 600V, VGE=15V
RG = 5, TJ = 25°C
Energy losses include tail & diode
reverse recovery
25
ns
190
105
3.8
—
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
3.9
7.7
30
—
—
—
—
—
mJ
IC = 35A, VCC = 600V, VGE=15V
RG = 5, TJ = 150°C
Energy losses include tail & diode
reverse recovery
25
ns
td(off)
Turn-Off delay time
270
tf
Fall time
—
—
—
—
140
3300
200
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
105
TJ = 150°C, IC = 140A
VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
0.52
170
22
—
—
—
mJ
ns
A
VCC = 600V, IF = 35A
VGE = 15V, Rg = 5
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
80
70
60
50
40
30
20
10
0
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 125W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
10
1000
10µsec
100
10
1
100µsec
1
1msec
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
10000
10
100
1000
10000
V
(V)
CE
V
(V)
CE
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 2 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
1000
100
10
1000
100
10
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
Tc = -40°C
Tc = 25°C
Tc = 150°C
1
1.0
0.1
0.1
0
2
4
6
8
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Saturation Voltage
Fig. 4 -Typ. IGBT Output Characteristics
VGE = 15V; tp = 20µs
TJ = 25°C; tp = 20µs
3
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
1000
100
10
16
14
12
10
8
V
V
= 600V
= 400V
CES
CES
6
T = -40°C
J
1
4
T = 25°C
J
2
T = 150°C
J
0.1
0
4
6
8
10
12
14
16
0
50
Q
100
150
200
250
V
(V)
, Total Gate Charge (nC)
GE
G
Fig. 6 - Typ. Transfer Characteristics
Fig. 7 - Typical Gate Charge vs. VGE
VCE = 50V; tp = 20µs
ICE = 35A
14
12
10
8
1000
100
10
E
E
E
@ Tj = 150°C
OFF
td
OFF
@ Tj = 150°C
@ Tj = 150°C
ON
RR
t
F
td
ON
E
E
E
@ Tj = 25°C
OFF
@ Tj = 25°C
@ Tj = 25°C
ON
RR
6
t
R
4
2
1
0
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
I
40
(A)
50
60
70
C
C
Fig. 9 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5.0; VGE = 15V
Fig. 8 - Typ. Energy Loss vs. IC
VCE = 600V, RG = 5.0; VGE = 15V
1000
10
9
8
7
6
5
4
3
2
1
0
E
E
E
Tj = 150°C
ON @
@ Tj = 150°C
OFF
@ Tj = 150°C
td
OFF
RR
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°C
t
F
100
td
ON
t
R
10
3
6
9
12 15 18 21 24 27
5
7
9
11 13 15 17 19 21 23 25 27
Rg ( )
R
( )
G
Fig. 11 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
Fig. 10 - Typ. Energy Loss vs. RG
VCE = 600V, ICE = 35A; VGE = 15V
4
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
30
28
26
24
22
20
1900
V
= 600V
R
= 5.0
CC
Tj = 150°C
G
1700
1500
1300
1100
900
R
= 10
= 22
= 27
G
V
= 15V
GE
= 35A
R
G
I
F
R
R
= 5
G
G
R
= 10
G
R
=
G
700
R
= 27
G
500
200
600
1000
1400
1800
2200
10
20
30
40
(A)
50
60
70
di /dt (A/µs)
I
F
F
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
Fig. 12 - Typ. IRR vs. di/dt
1000
-40°C
25°C
150°C
100
10
1
0.1
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
V
F
Fig. 14 - Typ. Diode Forward Voltage Drop
Characteristics
5
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W)
0.11421
0.15533
0.09137
i (sec)
0.000475
0.003895
0.018752
0.01
J J
CC
1 1
2 2
33
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
0.20
0.1
0.10
0.05
Ri (°C/W)
0.02298
0.13483
0.34628
0.32636
i (sec)
0.000019
0.000197
0.003798
0.051102
R1
R1
R2
R2
R3
R3
R4
R4
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
Ci= iRi
Ci= iRi
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
DUT /
VCC
DRIVER
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
(Board Stray Inductance 180nH)
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
7
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
800
700
600
500
400
300
200
100
0
320
280
VCE
240
200
160
120
80
40
0
ICE
-100
-40
-10.00
0.00
10.00
20.00
Time (uS)
Fig. WF1 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
October 30, 2014
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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October 30, 2014
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
RoHS Compliant
N/A
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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October 30, 2014
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