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IRGBC30FD2 [INFINEON]

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A); 超快软恢复（ VCES = 600V ， VGE @ = 15V ， IC = 31A ），绝缘栅双极晶体管
IRGBC30FD2
型号： IRGBC30FD2
厂家： Infineon    Infineon
描述：

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A)
超快软恢复（ VCES = 600V ， VGE @ = 15V ， IC = 31A ），绝缘栅双极晶体管

晶体 晶体管 栅 软恢复二极管 快速软恢复二极管
文件： 总8页 (文件大小：379K)
中文：  中文翻译
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PD - 9.794  
IRGBC30FD2  
INSULATED GATE BIPOLAR TRANSISTOR  
WITH ULTRAFAST SOFT RECOVERY  
Fast CoPack IGBT  
DIODE  
Features  
C
VCES = 600V  
• Switching-loss rating includes all "tail" losses  
• HEXFREDTM soft ultrafast diodes  
• Optimized for medium operating frequency (1 to  
10kHz) See Fig. 1 for Current vs. Frequency curve  
V
CE(sat) ≤ 2.1V  
G
@VGE = 15V, IC = 31A  
E
n-channel  
Description  
Co-packaged IGBTs are a natural extension of International Rectifier's well  
known IGBT line. They provide the convenience of an IGBT and an ultrafast  
recovery diode in one package, resulting in substantial benefits to a host of  
high-voltage, high-current, motor control, UPS and power supply applications.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
600  
V
IC @ TC = 25°C  
31  
IC @ TC = 100°C  
17  
ICM  
120  
A
ILM  
Clamped Inductive Load Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
120  
IF @ TC = 100°C  
IFM  
12  
120  
VGE  
± 20  
100  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
W
PD @ TC = 100°C Maximum Power Dissipation  
42  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1 N•m)  
Thermal Resistance  
Parameter  
Min.  
Typ.  
—
Max.  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
Wt  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
—
—
—
—
—
1.2  
2.5  
—
—
°C/W  
0.50  
—
80  
—
2 (0.07)  
g (oz)  
Revision 1  
C-101  
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IRGBC30FD2  
Electrical Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameter  
Min. Typ. Max. Units  
Conditions  
VGE = 0V, IC = 250µA  
V(BR)CES  
Collector-to-Emitter Breakdown Voltage  
600  
—
—
—
—
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage  
0.69  
V/°C VGE = 0V, IC = 1.0mA  
IC = 17A  
VCE(on)  
Collector-to-Emitter Saturation Voltage  
—
1.8 2.1  
VGE = 15V  
—
2.4  
2.2  
—
—
—
V
IC = 31A  
See Fig. 2, 5  
—
IC = 17A, TJ = 150°C  
VCE = VGE, IC = 250µA  
VGE(th)  
Gate Threshold Voltage  
3.0  
—
5.5  
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage  
-11  
10  
—
mV/°C VCE = VGE, IC = 250µA  
gfe  
Forward Transconductance  
6.1  
—
—
S
VCE = 100V, IC = 17A  
VGE = 0V, VCE = 600V  
ICES  
Zero Gate Voltage Collector Current  
250  
2500  
µA  
—
—
VGE = 0V, VCE = 600V, TJ = 150°C  
VFM  
IGES  
Diode Forward Voltage Drop  
—
1.4 1.7  
1.3 1.6  
V
IC = 12A  
See Fig. 13  
—
IC = 12A, TJ = 150°C  
VGE = ±20V  
Gate-to-Emitter Leakage Current  
—
—
±100 nA  
Switching Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameter  
Min. Typ. Max. Units  
27 30  
4.1 5.9  
Conditions  
Qg  
Total Gate Charge (turn-on)  
Gate - Emitter Charge (turn-on)  
Gate - Collector Charge (turn-on)  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 17A  
Qge  
Qgc  
td(on)  
tr  
nC  
ns  
VCC = 400V  
See Fig. 8  
TJ = 25°C  
12  
72  
75  
15  
—
—
IC = 17A, VCC = 480V  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
300 450  
220 350  
VGE = 15V, RG = 23Ω  
Energy losses include "tail" and  
diode reverse recovery.  
Eon  
Eoff  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
0.9  
2.1  
—
—
mJ See Fig. 9, 10, 11, 18  
3.0 4.6  
70  
75  
—
—
—
—
—
—
—
—
—
60  
TJ = 150°C,  
See Fig. 9, 10, 11, 18  
ns  
IC = 17A, VCC = 480V  
VGE = 15V, RG = 23Ω  
Energy losses include "tail" and  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
420  
480  
4.7  
7.5  
660  
100  
10  
Ets  
LE  
Total Switching Loss  
Internal Emitter Inductance  
Input Capacitance  
mJ diode reverse recovery.  
nH  
pF  
ns  
A
Measured 5mm from package  
VGE = 0V  
Cies  
Coes  
Cres  
trr  
Output Capacitance  
Reverse Transfer Capacitance  
Diode Reverse Recovery Time  
VCC = 30V  
See Fig. 7  
ƒ = 1.0MHz  
42  
TJ = 25°C See Fig.  
80 120  
3.5 6.0  
TJ = 125°C  
TJ = 25°C See Fig.  
TJ = 125°C 15  
TJ = 25°C See Fig.  
TJ = 125°C 16  
A/µs TJ = 25°C See Fig.  
TJ = 125°C 17  
14  
IF = 12A  
Irr  
Diode Peak Reverse Recovery Current  
Diode Reverse Recovery Charge  
5.6  
10  
VR = 200V  
Qrr  
80 180  
220 600  
nC  
di/dt = 200A/µs  
di(rec)M/dt  
Diode Peak Rate of Fall of Recovery  
During tb  
180  
120  
—
—
Notes:  
VCC=80%(VCES), VGE=20V, L=10µH,  
RG= 23Ω, ( See fig. 19 )  
Pulse width 5.0µs,  
single shot.  
Repetitive rating; VGE=20V, pulse width  
limited by max. junction temperature.  
( See fig. 20 )  
Pulse width ≤ 80µs; duty factor ≤ 0.1%.  
C-102  
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IRGBC30FD2  
20  
16  
12  
Duty cycle: 50%  
T
T
= 125°C  
J
= 90°C  
sink  
Ga te drive as specified  
Turn-on losses include  
effects of reverse recovery  
Power Dissipation = 21W  
60 % of rated  
volta ge  
8
4
A
0
0.1  
1
10  
100  
f, Frequency (kHz)  
Fig. 1 - Typical Load Current vs. Frequency  
(Load Current = IRMS of fundamental)  
1000  
100  
10  
10 00  
1 00  
T
= 25°C  
J
T
= 150°C  
J
T
= 150°C  
J
10  
T
= 25°C  
J
1
V
= 15V  
V
= 100V  
G E  
20µs PULSE W IDTH  
CC  
5µs P ULSE W IDTH  
1
1
0.1  
10  
5
10  
15 20  
V
, G ate-to-E m itter Voltage (V )  
VC E , Collector-to-Emitter Voltage (V)  
G E  
Fig. 3 - Typical Transfer Characteristics  
Fig. 2 - Typical Output Characteristics  
C-103  
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IRGBC30FD2  
40  
30  
20  
10  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
V
= 15V  
V
= 15V  
G E  
G E  
80µs P ULSE W IDTH  
I
= 34A  
C
I
= 17A  
= 8.5A  
C
C
I
25  
50  
75  
100  
125  
150  
-60 -40 -20  
0
20  
40  
60  
80 1 00 120 140 160  
T
, Case Tem perature (°C)  
TC , Case Temperature (°C)  
C
Fig. 5 - Collector-to-Emitter Voltage vs.  
Fig. 4 - Maximum Collector Current vs.  
Case Temperature  
Case Temperature  
10  
1
D
=
0 .50  
0.2 0  
0.1 0  
0.0 5  
P
D M  
0.1  
t
1
0.02  
0.01  
t
2
SIN G LE P UL SE  
(T H ER M A L R ES P O NS E)  
N otes:  
1 . D uty factor D  
=
t
/ t  
1
2
2. Pea k T = P  
x Z  
+ T  
C
D M  
J
thJC  
1
0.01  
0.00001  
0.0001  
0.00 1  
0.01  
0.1  
10  
t
, Rectangular Pulse D ura tion (sec)  
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case  
C-104  
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IRGBC30FD2  
20  
16  
12  
8
1400  
V
I
= 400V  
= 17A  
V
C
C
C
= 0V,  
f = 1MHz  
C E  
C
GE  
ies  
= C + C  
,
C
ce  
SHORTED  
ge  
gc  
= C  
gc  
1200  
1000  
800  
600  
400  
200  
0
res  
oes  
= C + C  
ce  
gc  
C
ies  
C
oes  
4
C
res  
0
0
5
10  
15  
20  
25  
30  
1
10  
100  
Q g , Total Gate Charge (nC)  
V
, C ollector-to-E m itter V oltage (V )  
C E  
Fig. 7 - Typical Capacitance vs.  
Fig. 8 - Typical Gate Charge vs.  
Collector-to-Emitter Voltage  
Gate-to-Emitter Voltage  
3.10  
3.06  
3.02  
2.98  
2.94  
100  
10  
1
VCC = 480V  
VGE = 15V  
TC = 25°C  
IC = 17A  
Ω
RG = 23  
VGE = 15V  
VCC = 480V  
IC = 34A  
IC = 17A  
IC = 8.5A  
A
A
0.1  
0
10  
20  
30  
40  
50  
60  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
T , Case Temperature (°C)  
Ω
R , Gate Resistance ( )  
G
C
Fig. 9 - Typical Switching Losses vs. Gate  
Fig. 10 - Typical Switching Losses vs.  
Resistance  
Case Temperature  
C-105  
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IRGBC30FD2  
12  
1000  
100  
10  
Ω
RG = 23  
V
T
= 20V  
= 125°C  
G E  
J
TC = 150°C  
VCC = 480V  
VGE = 15V  
9
6
3
0
SAFE OPE RA TING A RE A  
A
1
0
10  
20  
30  
40  
1
10  
100  
1000  
V
, C olle ctor-to-E m itter V oltage (V )  
CE  
I
, Collector-to-Emitter Current (A)  
C
Fig. 12 - Turn-Off SOA  
Fig. 11 - Typical Switching Losses vs.  
Collector-to-Emitter Current  
100  
T = 150°C  
J
T = 125°C  
J
10  
T = 25°C  
J
1
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
Forward Voltage Drop - V  
(V)  
FM  
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current  
C-106  
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IRGBC30FD2  
100  
10  
1
160  
120  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
= 24A  
F
I
= 24A  
F
I
= 12A  
F
I
= 12A  
F
80  
40  
0
I
= 6.0A  
F
I
= 6.0A  
F
100  
1000  
100  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 15 - Typical Recovery Current vs. dfi/dt  
Fig. 14 - Typical Reverse Recovery vs. dfi/dt  
10000  
600  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
1000  
400  
I
= 6.0A  
F
I
= 24A  
F
I
= 12A  
F
I
= 12A  
F
100  
200  
I
= 24A  
F
I
= 6.0A  
F
10  
100  
0
100  
1000  
1000  
di /dt - (A/µs)  
di /dt - (A/µs)  
f
f
Fig. 16 - Typical Stored Charge vs. dfi/dt  
Fig. 17 - Typical di(rec)M/dt vs. dif/dt  
C-107  
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IRGBC30FD2  
90% Vge  
+Vge  
Vce  
Same type  
device as  
D.U.T.  
90% Ic  
10% Vce  
Ic  
Ic  
5% Ic  
430µF  
80%  
of Vce  
D.U.T.  
td(off)  
tf  
t1+5µS  
Eoff = Vce ic dt  
t1  
Fig. 18a - Test Circuit for Measurement of  
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf  
t1  
t2  
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining  
Eoff, td(off), tf  
trr  
id dt  
tx  
trr  
GATE VOLTAGE D.U.T.  
Qrr =  
Ic  
10% +Vg  
+Vg  
tx  
10% Irr  
10% Vcc  
Vcc  
DUT VOLTAGE  
AND CURRENT  
Vce  
Vpk  
Irr  
10% Ic  
Vcc  
Ipk  
90% Ic  
Ic  
DIODE RECOVERY  
WAVEFORMS  
5% Vce  
tr  
td(on)  
t2  
Vce ie dt  
Eon =  
t2  
t4  
Erec = Vd id dt  
t3  
t1  
DIODE REVERSE  
t1  
RECOVERY ENERGY  
t3  
t4  
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,  
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,  
Defining Erec, trr, Qrr, Irr  
Defining Eon, td(on), tr  
Refer to Section D for the following:  
Appendix D: Section D - page D-6  
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a  
Fig. 19 - Clamped Inductive Load Test Circuit  
Fig. 20 - Pulsed Collector Current Test Circuit  
Package Outline 1 - JEDEC Outline TO-220AB  
Section D - page D-12  
C-108  
To Order  

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