IRGC75B60KB [INFINEON]
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 0.290 X 0.290 INCH, DIE-2;
| 型号： | IRGC75B60KB |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 0.290 X 0.290 INCH, DIE-2 电动机控制 栅 晶体管 |
| 文件： | 总1页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94617
IRGC75B60KB
Die in Wafer Form
Features
600V
IC(nom)=75A
C
GEN5 Non Punch Through (NPT) Technology
Low VCE(on)
VCE(on) typ.=1.95V
@ IC(nom) @ 25°C
Motor Control IGBT
Short Circuit Rated
10µs Short Circuit Capability
Square RBSOA
Positive VCE(on) Temperature Coefficient
G
Benefits
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
E
150mm Wafer
Excellent Current Sharing in Parallel Operation
Qualified for Industrial Market
Electrical Characteristics (Wafer Form)
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
Description
Guaranteed (min, max)
Test Conditions
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
0.96V min, 1.23V max IC = 10A, TJ = 25°C, VGE = 15V
600V min
3.5V min, 5.5V max
30µA max
TJ = 25°C, ICES = 1mA, VGE = 0V
VGE = VCE , TJ =25°C, IC = 250µA
TJ = 25°C, VCE = 600V
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
IGES
± 1.1µA max
TJ = 25°C, VGE = +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.290" x 0.290"
Wafer Diameter
150mm, with std. < 100 > flat
85µm, +/-7µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5536
100µm
Reject Ink Dot Size
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Die Outline
wwwꢀirfꢀcom
01/21/03
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