IRGIH50FUPBF [INFINEON]
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-259AA;
| 型号： | IRGIH50FUPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-259AA 晶体 晶体管 开关 双极性晶体管 通用开关 栅 局域网 |
| 文件： | 总8页 (文件大小：539K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -90930B
IRGIH50F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
VCES = 1200V
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
VCE(on) max =2.9V
G
• Switching-loss rating includes all "tail" losses
@VGE = 15V, IC = 25A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
sametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
TO-259AA
Absolute Maximum Ratings
Parameter
Max.
1200
45
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
25
A
ICM
180
90
ILM
VGE
20
V
PD @ TC = 25°C
Maximum Power Dissipation
200
80
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
-55 to + 150
TSTG
°C
g
300 (0.063in./1.6mm from case for 10s)
10.5 (typical)
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.625
—
30
°C/W
For footnotes refer to the last page
www.irf.com
1
02/18/02
IRGIH50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 100 µA
VGE = 0V, IC = 1.0 A
V(BR)CES
V(BR)ECS
1200 ––– –––
22 ––– –––
V
V
➂
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 1.1 ––– V/°C VGE = 0V, IC = 1.0 mA
––– 2.1 2.9
––– 2.5 –––
––– 2.4 –––
3.0 ––– 5.5
IC = 25A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
IC = 45A
See Fig.2, 5
V
IC = 25A , TJ = 125°C
VCE = VGE, IC = 250 µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -14 ––– mV/°C VCE = VGE, IC = 250 µA
gfe
Forward Transconductance
7.5 ––– –––
––– ––– 100
––– ––– 1200
S
VCE = 100V, IC = 25A
VGE = 0V, VCE = 960V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 960V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
––– ––– 100 nA VGE = 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 25A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– ––– 100
Qge
Qgc
td(on)
tr
––– ––– 21
––– ––– 43
––– ––– 68
––– ––– 26
––– ––– 480
––– ––– 330
––– 1.4 –––
––– 4.5 –––
––– 5.9 8.2
––– 33 –––
––– 15 –––
––– 590 –––
––– 500 –––
––– 13 –––
––– 6.8 –––
nC VCC = 400V
VGE = 15V
See Fig. 8
➄
➄
IC = 25A, VCC = 400V
VGE = 15V, RG = 2.35Ω
Energy losses include "tail"
See Fig. 9, 10, 14
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
td(on)
tr
td(off)
tf
TJ = 125°C
IC = 25A, VCC = 400V
VGE = 15V, RG = 2.35Ω
Energy losses include "tail"
See Fig. 11, 14
ns
➄
Turn-Off Delay Time
Fall Time
Ets
Total Switching Loss
Total Inductance
mJ
LC+LE
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
VGE = 0V
Cies
Coes
Cres
Input Capacitance
––– 2400 –––
––– 140 –––
––– 28 –––
Output Capacitance
pF
VCC = 30V
See Fig. 7
Reverse Transfer Capacitance
ƒ = 1.0MHz
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
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IRGIH50F
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRGIH50F
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs. Case
JunctionTemperature
Temperature
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRGIH50F
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-EmitterVoltage
Collector-to-EmitterVoltage
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRGIH50F
125°C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-EmitterCurrent
6
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IRGIH50F
L
D.U.T.
960V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 960V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 960V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRGIH50F
Notes:
Pulse width 5.0µs, single shot.
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
➄ Equipment limitation.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Case Outline and Dimensions —TO-259AA
LEGEND
1 = COLLECTOR
2 = EMITTER
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
8
www.irf.com
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