IRGNI0100M12 [INFINEON]

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7;
IRGNI0100M12
型号: IRGNI0100M12
厂家: Infineon    Infineon
描述:

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7

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文件: 总4页 (文件大小:120K)
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