IRGNIN050M12 [INFINEON]

Low conduction loss IGBT; 低导通损耗的IGBT


型号：	IRGNIN050M12
厂家：	Infineon
描述：	Low conduction loss IGBT 低导通损耗的IGBT 双极性晶体管
文件：	总6页 (文件大小：373K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 95A I(C)

ETC

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 110A I(C)

ETC

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 150A I(C)

ETC

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 130A I(C)

ETC

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 150A I(C)

ETC

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 175A I(C)

ETC

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 170A I(C)

ETC

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 200A I(C)

ETC

INSULATED GATE BIPOLAR TRANSISTOR

INFINEON

INSULATED GATE BIPOLAR TRANSISTOR

INFINEON

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

INFINEON

暂无描述

INFINEON