IRGP4086PBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT![IRGP4086PBF](http://pdffile.icpdf.com/pdf1/p00097/img/icpdf/IRGP4086PBF_519108_icpdf.jpg)
型号: | IRGP4086PBF |
厂家: | ![]() |
描述: | PDP TRENCH IGBT |
文件: | 总7页 (文件大小:247K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
PD - 97132
IRGP4086PbF
PDP TRENCH IGBT
Key Parameters
Features
VCE min
300
1.90
250
150
V
V
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C c
TJ max
A
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for Improved Panel Efficiency
)
°C
l
l
High Repetitive Peak Current Capability
Lead Free Package
C
C
E
G
C
G
E
TO-247AC
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
A
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
70
40
250
160
W
63
Power Dissipation
1.3
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount) d
Weight
Typ.
–––
Max.
0.8
Units
°C/W
g (oz)
RθJC (IGBT)
RθCS
d
0.24
–––
–––
40
RθJA
6.0 (0.21)
–––
www.irf.com
1
4/17/08
IRGP4086PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1 mA
Reference to 25°C, ICE = 1mA
Parameter
Min. Typ. Max. Units
BVCES
Collector-to-Emitter Breakdown Voltag 300
–––
–––
–––
V
ΔΒVCES/ΔTJ
Breakdown Voltage Temp. Coefficient –––
0.29
V/°C
V
GE = 15V, ICE = 25A e
–––
–––
1.29 1.46
1.49 1.67
1.90 2.10
2.57 2.96
VGE = 15V, ICE = 40A e
VGE = 15V, ICE = 70A e
VGE = 15V, ICE = 120A e
VGE = 15V, ICE = 70A, TJ = 150°C
VCE = VGE, ICE = 500μA
VCE(on)
Static Collector-to-Emitter Voltage
–––
–––
–––
2.6
V
V
2.27
–––
-11
2.0
5.0
100
–––
–––
29
–––
5.0
VGE(th)
Gate Threshold Voltage
ΔVGE(th)/ΔTJ
ICES
Gate Threshold Voltage Coefficient
–––
––– mV/°C
V
CE = 300V, VGE = 0V
VCE = 300V, VGE = 0V, TJ = 100°C
CE = 300V, VGE = 0V, TJ = 150°C
Collector-to-Emitter Leakage Current –––
25
–––
–––
100
-100
–––
–––
–––
—
μA
–––
–––
V
VGE = 30V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
–––
–––
–––
–––
–––
—
nA
VGE = -30V
VCE = 25V, ICE = 25A
VCE = 200V, IC = 25A, VGE = 15Ve
gfe
Qg
Qgc
td(on)
tr
S
65
nC
22
IC = 25A, VCC = 196V
RG = 10Ω, L=200μH, LS= 200nH
TJ = 25°C
36
—
31
—
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
—
112
65
—
—
—
IC = 25A, VCC = 196V
RG = 10Ω, L=200μH, LS= 200nH
TJ = 150°C
Turn-On delay time
Rise time
—
30
—
—
33
—
Turn-Off delay time
Fall time
—
145
98
—
—
—
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40μF, VGE = 15V
Shoot Through Blocking Time
100
–––
–––
ns
––– 1075 –––
EPULSE
VCC = 240V, RG= 5.1Ω, TJ = 25°C
Energy per Pulse
μJ
L = 220nH, C= 0.40μF, VGE = 15V
––– 1432 –––
––– 2250 –––
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
Ciss
Coss
Crss
LC
Input Capacitance
VCE = 30V
Output Capacitance
–––
–––
–––
110
58
–––
–––
–––
pF
ƒ = 1.0MHz,
Between lead,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
5.0
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13
–––
and center of die contact
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Half sine wave with duty cycle = 0.1, ton=2μsec.
R is measured at TJ of approximately 90°C.
θ
2
www.irf.com
IRGP4086PbF
240
200
160
120
80
240
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
40
40
0
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
240
240
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
200
160
120
80
200
160
120
80
40
40
0
0
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
240
200
10
I
= 25A
C
8
6
4
2
0
T
T
= 25°C
J
J
= 150°C
160
120
80
40
0
T
T
= 25°C
J
J
= 150°C
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
www.irf.com
3
IRGP4086PbF
80
70
60
50
40
30
20
10
0
300
200
100
0
ton= 2μs
Duty cycle = 0.1
Half Sine Wave
25
50
75
100
125
150
0
25
50
75
100
125
150
Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1600
1500
L = 220nH
C = 0.4μF
V
= 240V
1400
1300
1200
1100
1000
900
CC
1400
1200
1000
800
L = 220nH
C = variable
100°C
100°C
25°C
800
25°C
600
700
600
400
500
200
400
150 160 170 180 190 200 210 220 230 240
Collector-to-Emitter Voltage (V)
160 170 180 190 200 210 220 230
V
I , Peak Collector Current (A)
C
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
2000
1000
V
= 240V
CC
L = 220nH
t = 1μs half sine
C= 0.4μF
1600
1200
800
400
0
100
10 μs
100 μs
C= 0.3μF
C= 0.2μF
125
10
1ms
1
1
10
100
1000
25
50
75
100
150
V
(V)
CE
T , Temperature (ºC)
J
Fig 11. EPULSE vs. Temperature
Fig 12. Forward Bias Safe Operating Area
4
www.irf.com
IRGP4086PbF
25
20
15
10
5
10000
1000
100
I = 25A
D
V
V
V
= 240V
= 200V
= 150V
DS
DS
DS
Cies
Coes
Cres
0
10
0
20
40
60
80
100
0
100
200
300
Q
Total Gate Charge (nC)
G
V
(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
τι (sec)
Ri (°C/W)
τ
J τJ
τ
τ
Cτ
0.084697 0.000038
0.374206 0.001255
0.341867 0.013676
0.02
0.01
0.01
τ
1 τ1
τ
2 τ2
3τ3
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
www.irf.com
5
IRGP4086PbF
A
RG
C
PULSEA
PULSEB
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
www.irf.com
IRGP4086PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S EMB LY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
135H
57
56
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly lineposition
indicates "L ead-F ree"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification to
all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational
performance or safety. Please contact your IR representative if
you have specific design or use requirements or for further
information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/08
www.irf.com
7
相关型号:
©2020 ICPDF网 联系我们和版权申明