IRGPC20K-E [INFINEON]
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRGPC20K-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 局域网 电动机控制 栅 晶体管 |
| 文件： | 总8页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1129
IRGPC20K
INSULATEDGATEBIPOLARTRANSISTOR
Short Circuit Rated
UltraFastIGBT
Features
C
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over
VCES =600V
5kHz)
curve
See Fig. 1 for Current vs. Frequency
VCE(sat) ≤ 3.5V
G
@VGE = 15V, IC = 6.0A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor
control and other applications requiring short circuit withstand capability.
T
O -247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
10
IC @ TC = 100°C
6.0
A
ICM
20
ILM
20
tsc
10
µs
V
VGE
±20
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5.0
60
mJ
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.1
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
IRGPC20K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 20
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage— 0.37
V/°C VGE = 0V, IC = 1.0mA
IC = 6.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
—
2.4 3.5
VGE = 15V
3.6
2.9
—
—
—
V
IC = 10A
See Fig. 2, 5
—
IC = 6.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
ꢀ
1.9 3.3
—
S
VCE = 100V, IC = 6.0A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250 µA
1000
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
10
17
26
IC = 6.0A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
4.3 6.8
See Fig. 8
6.4
29
18
58
11
—
—
90
TJ = 25°C
RiseTime
ns
IC = 6.0A, VCC = 480V
VGE = 15V, RG = 50Ω
td(off)
tf
Turn-Off Delay Time
FallTime
120 200
Energy losses include "tail"
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.11
0.13
—
—
mJ
µs
See Fig. 9, 10, 11, 14
0.24 0.31
tsc
—
—
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 50Ω, VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
28
22
—
—
—
—
—
—
—
—
—
ns
IC = 6.0A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
FallTime
200
145
0.50
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
LE
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
360
45
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
4.7
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
ꢀ Pulse width 5.0µs,
Repetitive rating; pulse width limited
single shot.
by maximum juntion temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
IRGPC20K
16
12
8
For both:
Triangular wave:
Duty cycle: 50%
T = 125°C
J
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 15W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
4
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
100
10
1
T = 25°C
J
T = 150°C
J
10
T = 150°C
J
T = 25°C
J
V
= 100V
V
= 15V
CC
GE
5µs PULSE WIDTH
20µs PULSE WIDTH
1
0.1
0.1
5
10
15
20
1
10
V , Gate-to-Emitter Voltage (V)
GE
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGPC20K
10
8
5.0
4.0
3.0
2.0
1.0
V
= 15V
GE
V
= 15V
GE
80µs PULSE WIDTH
I
= 12A
C
6
4
I
= 6.0A
= 3.0A
C
2
I
C
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
, Case Temperature (°C)
C
T
C
, Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Fig. 5 - Collector-to-Emitter Voltage vs.
CaseTemperature
CaseTemperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRGPC20K
700
600
500
400
300
200
100
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
V
I
= 480V
= 6.0A
GE
ies
res
oes
CE
C
= C + C
,
C
SHORTED
ge
gc
ce
= C
gc
= C + C
ce
gc
C
ies
C
oes
C
4
res
0
1
10
100
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
CE
Q , Total Gate Charge (nC)
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
10
0.26
0.25
0.24
0.23
0.22
0.21
0.20
V
= 480V
= 15V
= 25°C
= 6.0A
R
= 50Ω
= 15V
= 480V
CC
G
V
T
I
V
V
GE
C
GE
CC
C
I
I
I
= 12A
= 6.0A
= 3.0A
C
C
1
C
0.1
A
0.01
-60 -40 -20
0
10
20
30
40
50
60
0
20
40
60
80 100 120 140 160
T , Case Temperature (°C)
C
Ω
, Gate Resistance ( )
R
G
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
CaseTemperature
IRGPC20K
1.4
100
10
1
V = 20V
GE
R
T
V
V
= 50Ω
G
T
= 125°C
= 150°C
= 480V
= 15V
J
C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CC
GE
SAFE OPERATING AREA
A
0.1
1
10
100
1000
0
2
4
6
8
10
12
14
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
NOTES:
- D -
3.65 (.143)
1
DIMENSIONS & TOLERANCING
5.30 (.209)
4.70 (.185)
15.90 (.626)
3.55 (.140)
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
CONFORM S TO JEDEC OUTLINE
TO-247AC.
15.30 (.602)
M
0.25 (.010)
5.50 (.217)
D
M
B
2
3
2.50 (.089)
1.50 (.059)
4
- B -
- A -
4
20.30 (.800)
19.70 (.775)
5.50 (.217)
4.50 (.177)
2X
LEAD ASSIGNMENTS
1 - GATE
1
2 - COLLECTOR
3 - EMITTER
2
3
4 - COLLECTOR
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
*
LONGER LEADED (20m m)
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
*
2.40 (.094)
0.80 (.031)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3X
0.40 (.016)
2.00 (.079)
2X
5.45 (.215)
M
S
2.60 (.102)
2.20 (.087)
A
C
3.40 (.133)
3.00 (.118)
2X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
IRGPC20K
L
D.U.T.
4 8 0 V
V *
RL
=
I
C
4
X
50V
0
-
@ 2 5 ° C
C
1000V
4 8 0 V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
D.U.T.
Fig. 14a - Switching
Loss Test Circuit
Driver*
V
C
50V
1000V
*
Driver
same
as
t y p e
D.U.T., VC
4 8 0 V
=
90%
10%
Fig. 14b - Switching Loss
Waveforms
V
C
90%
t
d(off)
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
on
E
off
E = (E +E )
off
ts
on
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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