IRGPC40MD2 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A); 超快软恢复（ VCES = 600V ， VGE @ = 15V ， IC = 24A）绝缘栅双极晶体管
| 型号： | IRGPC40MD2 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A) |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Preliminary Data Sheet PD - 9.1084
IRGPC40MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
Short Circuit Rated
Fast CoPack IGBT
DIODE
Features
C
VCES = 600V
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz)
V
CE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 24A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
40
24
80
V
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
80
15
80
10
± 20
IF @ TC = 100°C
IFM
tsc
VGE
µs
V
PD @ TC = 25°C
Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
0.77
1.7
—
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
—
°C/W
—
0.24
—
—
40
—
6 (0.21)
—
g (oz)
Revision 2
C-397
To Order
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IRGPC40MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
0.70
2.0
2.6
2.4
—
—
—
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
V/°C VGE = 0V, IC = 1.0mA
IC = 24A
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
—
3.0
—
VGE = 15V
—
V
IC = 40A
—
—
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-12
12
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.2
—
—
S
VCE = 100V, IC = 24A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
250
3500
1.7
1.6
µA
—
—
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
VFM
IGES
Diode Forward Voltage Drop
—
1.3
1.2
—
V
—
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
59
8.6
25
26
37
80
10
42
—
—
IC = 24A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
TJ = 25°C
IC = 24A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
240 410
230 420
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.75
1.65
2.4
—
—
mJ
µs
Ets
3.6
—
tsc
—
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω, VCPK < 500V
TJ = 150°C,
td(on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
28
37
—
—
—
—
—
—
—
—
—
60
tr
td(off)
tf
ns
IC = 24A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
Turn-Off Delay Time
Fall Time
380
460
4.5
13
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
Cies
Coes
Cres
trr
1500
190
20
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
ƒ = 1.0MHz
42
TJ = 25°C
74 120
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
4.0
6.5
6.0
10
VR = 200V
di/dt = 200A/µs
Qrr
80 180
220 600
nC
di(rec)M/dt
Notes:
Diode Peak Rate of Fall of Recovery
During tb
188
160
—
—
A/µs TJ = 25°C
TJ = 125°C
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω.
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D for the following:
Package Outline 3 - JEDEC Outline TO-247AC
Section D - page D-13
C-398
To Order
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