IRGS4620DPBF_15 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE;
| 型号： | IRGS4620DPBF_15 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 软恢复二极管 快速软恢复二极管 |
| 文件： | 总15页 (文件大小：893K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGS4620DPbF
IRGB4620DPbF
IRGP4620D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
VCES = 600V
C
C
C
C
IC = 20A, TC =100°C
E
E
E
C
G
E
C
G
C
C
G
tSC ≥ 5µs, TJ(max) = 175°C
CE(ON) typ. = 1.55V @ IC = 12A
G
G
E
IRGP4620D-EPbF
TO-247AD
IRGS4620DPbF
D2Pak
IRGB4620DPbF
TO-220AC
V
n-channel
Applications
G
Gate
C
E
•
•
•
Appliance Drive
Collector
Emitter
Inverters
UPS
Features
Low VCE(ON) and switching losses
Benefits
High efficiency in a wide range of applications and switching
Improved reliability due to rugged hard switching
performance and high power capability
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient and tight
distribution of parameters
Excellent current sharing in parallel operation
5µs Short Circuit SOA
Lead-Free, RoHS Compliant
Enables short circuit protection scheme
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Orderable Part Number
Quantity
50
IRGS4620DPbF
IRGS4620DTRRPbF
IRGS4620DTRLPbF
IRGB4620DPbF
IRGP4620DPbF
IRGP4620D-EPbF
IRGS4620DPbF
D2Pak
800
800
50
25
25
IRGB4620DPbF
IRGP4620DPbF
IRGP4620D-EPbF
TO-220AB
TO-247AC
TO-247AD
Tube
Tube
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
600
32
20
36
48
16
10
48
±20
V
A
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
V
±30
140
70
PD @ TC = 25°C
PD @ TC = 100°C
W
Maximum Power Dissipation
TJ
Operating Junction and
-40 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
C
300
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
10 lbf·in (1.1 N·m)
Notes through are on page 7
1
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IRGS/B/P4620D/EPbF
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
–––
–––
–––
Max. Units
1.07
1.12
3.66
3.71
°C/W
–––
40
40
62
Thermal Resistance Junction-to-Case (D2Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
RθJC (IGBT)
RθJC (Diode)
Thermal Resistance Junction-to-Case (D2Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
RθCS
RθJA
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
—
—
—
Typ.
—
Max. Units
Conditions
VGE = 0V, IC = 100µA
V(BR)CES
ΔV(BR)CES/ΔTJ
—
—
1.85
—
V
0.40
1.55
1.90
1.97
—
-18
7.7
2.0
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 12A, VGE = 15V, TJ = 25°C
V
IC = 12A, VGE = 15V, TJ = 150°C
IC = 12A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 350µA
VCE(on)
Collector-to-Emitter Saturation Voltage
—
VGE(th)
Gate Threshold Voltage
Threshold Voltage Temp. Coefficient
Forward Transconductance
6.5
—
V
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
ΔVGE(th)/ΔTJ
gfe
—
S
V
V
CE = 50V, IC = 12A, PW = 80µs
GE = 0V, VCE = 600V
—
µA
ICES
IGES
VFM
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
—
—
—
—
475
—
2.1
—
VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V
±100
3.1
—
IF = 12A
IF = 12A, TJ = 175°C
1.6
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
25
7.0
11
Max Units
—
Conditions
Qg
IC = 12A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
nC
µJ
VCC = 400V
75
IC = 12A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 25°C
225
300
31
17
83
Energy losses include tail & diode
ns
µJ
ns
pF
td(off)
tf
Turn-Off delay time
Fall time
reverse recovery
24
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
185
355
540
30
18
102
41
765
52
23
IC = 12A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 48A
VCC = 480V, Vp ≤ 600V
RG = 22Ω, VGE = +20V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
CC = 400V, Vp ≤ 600V
SCSOA
Short Circuit Safe Operating Area
5.0
—
—
µs
RG = 22Ω, VGE = +15V to 0V
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
280
68
19
—
—
—
µJ TJ = 175°C
VCC = 400V, IF = 12A, VGE = 15V,
ns
A
Rg = 22Ω, L = 200µH, LS = 150nH
2
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IRGS/B/P4620D/EPbF
40
30
20
10
0
150
125
100
75
50
25
0
25
50
75
100
(°C)
125
150
175
1000
8
25
10
0
50
75
100
(°C)
125
150
175
1000
8
T
T
C
C
Fig. 2 - Power Dissipation vs.
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
100
10
1
100
10µsec
100µsec
10
1msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
100
V
(V)
V
(V)
CE
CE
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
45
45
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
3
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IRGS/B/P4620D/EPbF
45
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
-40°c
25°C
175°C
0
0
1
2
3
4
5
6
7
8
0.0
1.0
2.0
(V)
3.0
4.0
V
(V)
V
CE
F
Fig. 8 - Typ. Diode Forward Voltage Drop
Fig. 7 - Typ. IGBT Output Characteristics
Characteristics
TJ = 175°C; tp = 80µs
20
20
18
16
14
18
16
14
12
10
8
12
10
8
I
I
I
= 6.0A
= 12A
= 24A
I
I
I
= 6.0A
= 12A
= 24A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
50
T
= 25°C
J
40
30
20
10
0
T
= 175°C
J
I
I
I
= 6.0A
= 12A
= 24A
CE
CE
CE
6
4
2
0
5
10
15
20
0
5
10
15
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 175°C
4
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IRGS/B/P4620D/EPbF
800
700
600
500
400
300
200
100
0
1000
100
10
td
t
OFF
E
OFF
F
td
ON
E
ON
t
R
1
0
10
20
30
5
10
15
(A)
20
25
I
(A)
I
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
500
1000
450
400
E
OFF
350
300
td
OFF
100
250
200
150
100
50
E
ON
t
F
td
ON
t
R
10
0
25
50
Rg (
75
100
125
0
25
50
75
(Ω)
100
125
R
Ω
)
G
Fig. 17 - Typ. Switching Time vs. RG
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
25
25
R
10
Ω
G =
20
15
10
5
20
15
10
5
R
22
Ω
G =
R
47
Ω
G =
R
100
Ω
G =
0
0
25
50
75
Ω)
100
125
0
10
20
30
R
(
G
I
(A)
F
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
TJ = 175°C
5
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IRGS/B/P4620D/EPbF
1400
1200
1000
800
25
20
15
10
5
24A
Ω
10
Ω
22
47Ω
12A
600
Ω
100
400
6.0A
200
0
0
500
1000
1500
0
500
1000
1500
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 400V; VGE = 15V; IF = 12A; TJ = 175°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
CC = 400V; VGE = 15V; TJ = 175°C
V
V
400
350
300
250
200
150
100
50
120
110
100
90
20
18
16
14
12
10
8
R
= 10Ω
G
R
= 22
Ω
G
R
= 47Ω
G
80
70
60
R
= 100Ω
G
50
6
40
4
30
2
20
0
0
0
10
20
30
8
10
12
14
(V)
16
18
I
(A)
V
F
GE
Fig. 22 - Typ. Diode ERR vs. IF
Fig. 23 - VGE vs. Short Circuit Time
TJ = 175°C
VCC = 400V; TC = 25°C
10000
1000
100
16
14
12
10
8
V
= 300V
CES
CES
V
= 400V
Cies
6
4
Coes
Cres
2
10
0
0
20
40
60
(V)
80
100
0
5
10
15
20
25
30
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 25 - Typical Gate Charge vs. VGE
CE = 12A; L = 600µH
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
6
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IRGS/B/P4620D/EPbF
10
1
D = 0.50
0.20
R1
R1
R2
R2
R3
R3
Ri (°C/W)
0.358
τi (sec)
0.10
0.05
0.02
0.01
τ
0.1
J τJ
τ
τ
CτC
0.000171
0.001361
0.009475
τ
1 τ1
τ
2 τ2
3τ3
0.424
Ci= τi/Ri
0.287
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W)
0.821094
1.913817
0.926641
τi (sec)
0.1
0.02
0.01
τ
J τJ
τ
τ
CτC
0.000233
0.001894
0.014711
τ
1 τ1
τ
2 τ2
3τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.
Rθ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by maximum junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
7
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IRGS/B/P4620D/EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
Rg
DUT /
VCC
DRIVER
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
8
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IRGS/B/P4620D/EPbF
500
400
300
200
100
0
50
40
30
500
400
300
200
100
0
25
20
15
10
5
tr
tf
TEST
90% ICE
20
90% test
5% ICE
10
10% test current
5% VCE
5% VCE
0
0
EOFF Loss
EON
-100
-10
12.10
-100
-5
11.70
11.90
-0.50
0.50
Time(µs)
1.50
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
250
200
150
100
50
25
20
QRR
400
300
200
100
0
15
tRR
10
VCE
5
0
ICE
-5
-10
-15
-20
-25
10%
Peak
IRR
Peak
IRR
0
-100
-50
-5.00
0.00
5.00
10.00
-0.05
0.05
0.15
time (µS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
9
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IRGS/B/P4620D/EPbF
D2-PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRGS/B/P4620D/EPbF
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E
X A
M
P
L E :
T H I S IS
L O
A
D
N
IR F 1 0 1 0
P
A R T N U M B E R
T
C
O
E 1 7 8 9
IN T E R
N
A
T IO
T IF IE R
L O
N A L
R
E C
A
S
S E
M
B
L E
D
O
N
W
W
1 9 , 2 0 0 0
G
O
IN T H
E
A
S
S
E M
B
L Y L IN "C
E
"
D
A
T E
C O D E
Y E A
R
0
=
2 0 0 0
N
o
t e : "P
"
in a s s e m
b
ly lin e
p o s it io n
A
L O
S S
T C O D E
E M B L Y
W
E E K 1 9
in d ic a t e s "L e a d
-
F r e e "
L IN
E C
TO-220AB package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGS/B/P4620D/EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
135H
57
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGS/B/P4620D/EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
13
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© 2014 International Rectifier
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November 14, 2014
IRGS/B/P4620D/EPbF
D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
14
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© 2014 International Rectifier
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November 14, 2014
IRGS/B/P4620D/EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
D2Pak
MSL1
N/A
Moisture Sensitivity Level
TO-220AB
TO-247AC
TO-247AD
N/A
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
• Added note to IFM Diode Maximum Forward Current on page 1.
11/14/2014
• Added note from switching losses test condition on page 2.
• Updated package outline on page 11.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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© 2014 International Rectifier
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November 14, 2014
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