IRGSL8B60K [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRGSL8B60K |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总13页 (文件大小：469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94545C
IRGB8B60K
IRGS8B60K
INSULATED GATE BIPOLAR TRANSISTOR
IRGSL8B60K
C
Features
VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
IC = 20A, TC=100°C
tsc>10µs, TJ=150°C
VCE(on) typ. = 1.8V
G
• Positive VCE (on) Temperature Coefficient.
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
TO-262
TO-220AB
IRGB8B60K
IRGS8B60K
IRGSL8B60K
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Gate-to-Emitter Voltage
600
V
VCES
IC @ TC = 25°C
28
19
56
A
IC @ TC = 100°C
ICM
56
ILM
VGE
±20
V
Maximum Power Dissipation
167
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
83
Operating Junction and
-55 to +175
TJ
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.90
–––
62
Units
RθJC
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
0.50
–––
°C/W
Rθ
CS
RθJA
Junction-to-Ambient (PCB Mount, Steady State)
Weight
–––
40
Rθ
JA
1.44
–––
g
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1
10/16/03
IRGB/S/SL8B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
V
GE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
600
—
—
—
—
3.5
—
—
—
—
—
—
—
0.57
1.8
2.2
2.3
4.5
-9.5
3.7
1.0
200
—
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 1mA (25°C-150°C)
—
V/°C
IC = 8.0A, VGE = 15V, TJ = 25°C
IC = 8.0A, VGE = 15V, TJ = 150°C
IC = 8.0A, VGE = 15V, TJ = 175°C
2.2
2.5
2.6
5.5
—
5,6,7
V
8,9,10
VGE(th)
∆VGE(th)/∆TJ
gfe
VCE = VGE, IC = 250µA
Gate Threshold Voltage
8,9,10,
11
V
CE = VGE, IC = 1mA (25°C-125°C)
CE = 50V, IC = 8.0A, PW = 80µs
Threshold Voltage temp. coefficient
Forward Transconductance
mV/°C
S
V
—
ICES
VGE = 0V, VCE = 600V
GE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
GE = ±20V
Zero Gate Voltage Collector Current
150
500
V
µA
800 1320
±100 nA
IGES
V
Gate-to-Emitter Leakage Current
—
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
17
Qg
IC = 8.0A
CC = 480V
VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
29
3.7
14
—
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
V
—
nC
µJ
ns
CT1
—
IC = 8.0A, VCC = 400V
VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 25°C
160
160
320
23
268
268
433
27
CT4
CT4
IC = 8.0A, VCC = 400V
Ω
GE = 15V, RG = 50 , L = 1.1mH
V
Rise time
22
26
td(off)
tf
TJ = 25°C
Turn-Off delay time
140
32
150
42
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 8.0A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
220
270
490
22
330
381
608
27
CT4
12,14
WF1,WF2
13,15
CT4
Ω
GE = 15V, RG = 50 , L = 1.1mH
V
µJ
ns
TJ = 150°C
IC = 8.0A, VCC = 400V
VGE = 15V, RG = 50Ω, L = 1.1mH
TJ = 150°C
Rise time
21
25
td(off)
tf
Turn-Off delay time
180
40
198
56
WF1
Fall time
WF2
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
440
38
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
pF
µs
16
16
—
f = 1.0MHz
TJ = 150°C, IC = 34A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50
TJ = 150°C, Vp = 600V, RG = 100Ω
FULL SQUARE
4
Ω
CT2
CT3
WF3
V
CC=360V,VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
—
—
Notes to are on page 13.
2
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IRGB/S/SL8B60K
35
30
25
20
15
10
5
175
150
125
100
75
50
25
0
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
T
(°C)
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
100 µs
10
1ms
1
10ms
0.1
DC
0
0.01
10
100
(V)
1000
1
10
100
(V)
1000
10000
V
V
CE
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
TJ = 150°C; VGE =15V
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3
IRGB/S/SL8B60K
40
40
35
30
25
20
15
10
5
V
= 18V
GE
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
40
35
30
V
= 18V
GE
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
1
2
3
4
5
6
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
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IRGB/S/SL8B60K
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
100
80
60
40
20
0
20
18
16
14
12
10
8
T
= 25°C
J
T
= 150°C
J
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
6
T
= 150°C
J
4
T
J
= 25°C
15
2
0
0
5
10
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 360V; tp = 10µs
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5
IRGB/S/SL8B60K
600
1000
100
10
500
td
OFF
400
E
OFF
300
200
100
0
t
F
E
ON
td
ON
t
R
0
5
10
(A)
15
20
0
5
10
(A)
15
20
I
I
C
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V,
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V
RG= 50Ω; VGE= 15V
RG= 50Ω; VGE= 15V
700
600
500
400
300
200
100
0
10000
E
ON
E
1000
100
10
OFF
td
OFF
td
ON
t
F
t
R
0
100
200
300
400
500
0
100
200
300
400
500
R
(
)
Ω
R
( )
Ω
G
G
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
6
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IRGB/S/SL8B60K
16
14
12
10
8
1000
100
10
Cies
300V
400V
Coes
Cres
6
4
2
1
0
1
10
(V)
100
0
5
10
15
20
25
30
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 16- Typ. Capacitance vs. VCE
Fig. 17 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 8.0A; L = 600µH
10
1
D = 0.50
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.20
0.10
0.05
τ
J τJ
τ
0.491
0.000190
τ
Cτ
0.1
1 τ1
Ci= τi/Ri
τ
2τ2
0.409
0.001153
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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7
IRGB/S/SL8B60K
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
8
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IRGB/S/SL8B60K
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
24
20
tf
Vce
tr
Vce
Ice
16
12
8
90% Ice
5% Vce
90% Ice
10% Ice
6
4
5% Ice
Ic e
2
4
0
5% Vce
Eoff Loss
0
-100
-200
-2
-4
Eon
Loss
-100
-4
0
0.2
0.4
0.6
0.8
1
0.3
0.5
0.7
Time (uS)
0.9
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400
350
300
250
200
150
100
50
80
60
40
20
0
0
0.00
10.00
20.00
30.00
40.00
50.00
Time (uS)
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
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9
IRGB/S/SL8B60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
LEAD ASSIGNMENTS
15.24 (.600)
14.84 (.584)
IGBTs, CoPACK
HEXFET
1.15 (.045)
MIN
1- GATE
1- GATE
2- COLLECTOR
2- DRAIN
1
2
3
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PAR
T NUMBER
INTERNA
TIONAL
RECTIFIER
LOT CODE 1789
ASSEMBLED ON WW19, 199
IN THE ASSEMBLY LINE "C"
7
LOGO
DATE CODE
YEAR 7 = 1997
ASSEMBLY
LOT C
ODE
WEEK
19
LINE C
10
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IRGB/S/SL8B60K
D2Pak Package Outline
D2Pak Part Marking Information
THIS IS AN IRF5
30S WITH
PART NUMBER
F530S
LOT CODE 802
4
INTERNATIO
NAL
RECTIFIER
LOGO
ASSEMBLED ON W
W02, 2000
IN THE ASSEMBLY LINE
"L"
DATE COD
E
YEAR 0 = 2000
ASS
LOT CODE
EMBLY
WEEK
LINE L
02
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11
IRGB/S/SL8B60K
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXA
MPLE:
THIS
IS AN IRL3103L
LOT CODE 178
PART NUMBER
9
INTERNATIONAL
RECTIFI
ASSEMBLED ON WW19, 1
997
IN THE ASSEMBLY LINE "C"
ER
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMB
LY
LOT CODE
L
INE C
12
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IRGB/S/SL8B60K
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 50Ω.
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/03
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13
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