IRH7450SE_15 [INFINEON]

Simple Drive Requirements;


型号：	IRH7450SE_15
厂家：	Infineon
描述：	Simple Drive Requirements
文件：	总8页 (文件大小：122K)
中文：	中文翻译
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PD - 91390B

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-204AA/AE)

IRH7450SE

500V, N-CHANNEL

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number

Radiation Level

RDS(on)

IRH7450SE

100K Rads (Si)

0.51Ω 12A

TO-204AE

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

7.0

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

151

1.2

W/°C

Linear Derating Factor

Gate-to-Source Voltage

±20

500

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

4.2

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10 sec.)

11.5 (Typical)

For footnotes refer to the last page

www.irf.com

5/16/01

IRH7450SE

Pre-Irradiation

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

500

—

= 0V, I = 1.0mA

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.6

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.5

3.0

—

0.51

0.57

4.5

—

= 12V, I = 7.0A

GS D

DS(on)

➀

Ω

= 12V, I = 12A

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 7.0A ➀

250

= 400V ,V =0V

DSS

DS GS

µA

—

= 400V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

100

-100

140

= 20V

= -20V

GSS

=12V, I = 12A

GS D

d(on)

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

= 250V

= 250V, I = 12A,

=12V, R = 2.35Ω

d(off)

+ L

Total Inductance

—

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

Input Capacitance

Output Capacitance

—

2800

640

—

= 0V, V = 25V

f = 1.0MHz

iss

oss

rss

Reverse Transfer Capacitance

250

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.6

500

9.6

T = 25°C, I = 12A, V

= 0V ➀

µC

T = 25°C, I = 12A, di/dt ≤ 100A/µs

≤ 50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Case-to-Sink

—

0.12

—

0.83

—

thJC

thCS

thJA

°C/W

Junction-to-Ambient

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Pre-Irradiation

IRH7450SE

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

100K Rads (Si)

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

500

2.0

—

4.5

= 0V, I = 1.0mA

DSS

GS D

= V , I = 1.0mA

GS(th)

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

100

-100

= 20V

GSS

µA

—

= -20V

GSS

—

= 400V, V =0V

DS GS

DSS

DS(on)

On-State Resistance

—

0.51

1.6

Ω

= 12V, I = 7.0A

= 0V, I = 12A

Diode Forward Voltage

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

V_DS(V)

Ion

LET

Energy

(MeV)

Range

MeV/(mg/cm²))

(µm)

375

350

375

@V_GS=0V @V_GS=-5V @V_GS=-10V@V_GS=-15V @V_GS=-20V

285

305

265

375

350

—

375

350

—

375

325

—

375

300

—

36.8

26.6

400

300

200

100

-5

-10

-15

-20

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRH7450SE

Pre-Irradiation

100

VGS

15V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V

20µs PULSE WIDTH

T = 150 C

T = 25 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

3.0

2.5

2.0

1.5

1.0

0.5

0.0

12A

T = 25 C

T = 150 C

= 50V

20µs PULSE WIDTH

= 12V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

10 11

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

www.irf.com

Pre-Irradiation

IRH7450SE

5000

= 12 A

= 0V,

f = 1MHz

C SHORTED

= 400V

= 250V

= 100V

= C + C

iss

gd ,

= C

rss

= C + C

4000

3000

2000

1000

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

120

150

100

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

100

10us

100us

1ms

T = 25 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.0

0.1

0.4

0.8

1.2

1.6

2.0

100

1000

10000

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

www.irf.com

IRH7450SE

Pre-Irradiation

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRH7450SE

1200

1000

800

600

400

200

TOP

5.4A

7.6A

BOTTOM 12A

15V

DRIVER

D S

D.U.T

D D

₂V_0V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature ( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRH7450SE

Footnotes:

Pre-Irradiation

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀➀➀Total Dose Irradiation with V Bias.

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

➀➀➀V

= 50V, starting T = 25°C, L= 6.9 mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 12A, V

= 12V

➀➀Total Dose Irradiation with V Bias.

➀➀ I

≤ 12A, di/dt ≤ 400A/µs,

= 0 during

400 volt V

applied and V

≤ 500V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions —TO-204AE (Modified TO-3)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/01

www.irf.com

IRH7450SE_15 [INFINEON]

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