IRHE4110 [INFINEON]
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18;
| 型号： | IRHE4110 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90732E
IRHE7110
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(LCC-18)
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHE7110
IRHE3110
IRHE4110
IRHE8110
100K Rads (Si) 0.60Ω
300K Rads (Si) 0.60Ω
600K Rads (Si) 0.60Ω
1000K Rads (Si) 0.60Ω
3.5A
3.5A
3.5A
3.5A
LCC-18
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
3.5
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
2.2
14
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
15
W
W/°C
V
D
C
0.12
±20
68
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
—
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
—
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 ( for 5s)
0.42 (Typical )
For footnotes refer to the last page
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1
04/15/02
IRHE7110
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.10
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
0.8
—
—
—
—
—
—
—
0.60
0.69
4.0
—
Ω
V
= 12V, I =2.2A
D
DS(on)
GS
GS
➀
V
= 12V, I = 3.5A
D
V
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 2.2A ➀
DS
V
DS
I
25
250
= 80V ,V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
11
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I =3.5A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
3.0
3.3
20
V
= 50V
DS
t
t
t
t
V
= 50V, I =3.5A
DD D
V =12V, R = 7.5Ω
GS
25
40
G
ns
d(off)
f
40
L
+ L
Total Inductance
—
Measured from the center of drain
pad to center of source pad
S
D
nH
C
Input Capacitance
—
—
—
290
100
15
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
26
104
1.4
820
12
S
A
SM
V
T = 25°C, I = 26A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
µC
T = 25°C, I = 26A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
8.3
—
thJC
Junction-to-PC Board
27
°C/W
Soldered to a copper clad PB Board
thJ-PCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHE7110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
Min
Drain-to-Source Breakdown Voltage 100
100K Rads(Si)1
300 - 1000K Rads (Si) Units
Min Max
Test Conditions
Max
BV
—
4.0
100
-100
25
100
1.25
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
2.0
—
—
—
—
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (LCC-18)
Diode Forward Voltage
V
GS
= 20V
GSS
nA
I
—
V
GS
= -20 V
GSS
I
—
µA
V =80V, V
DS
=0V
GS
DSS
R
➀
0.60
—
0.80
Ω
V
= 12V, I =2.2A
D
GS
DS(on)
DS(on)
SD
R
➀
—
—
0.60
1.5
—
—
0.80
1.5
Ω
V
= 12V, I =2.2A
D
GS
V
➀
V
V
= 0V, I = 3.5A
GS S
1. Part numbers IRHE7110
2. Part number IRHE3110, IRHE4110, IRHE8110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
Energy
(MeV)
285
Range
(µm)
VDS(V)
@VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
Cu
Br
28
43
39
100
100
100
90
100
70
80
50
60
36.8
305
—
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Post-Irradiation
IRHE7110
Fig 2. Typical Response of On-State Resistance
Fig 1. Typical Response of Gate Threshhold
Vs. Total Dose Exposure
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Fig 4. Typical Response of Drain to Source
Vs. Total Dose Exposure
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
IRHE7110
Fig 5. Typical Zero Gate Voltage Drain
Fig 6. Typical On-State Resistance Vs.
Current Vs. Total Dose Exposure
NeutronFluenceLevel
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
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5
RadiationCharacteristics
IRHE7110
GS
DS
Note: Bias Conditions during radiation:V = 12 Vdc, V = 0 Vdc
Fig 9. Typical Output Characteristics
Fig 10. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation100KRads(Si)
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
6
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Radiation Characteristics
IRHE7110
GS
DS
Note: Bias Conditions during radiation: V = 0 Vdc, V = 80 Vdc
Fig 13. Typical Output Characteristics
Fig 14. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Pre-Irradiation
Fig 15. Typical Output Characteristics
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
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7
IRHE7110
Pre-Irradiation
Fig 17. Typical Output Characteristics
Fig 18. Typical Output Characteristics
Fig 19. Typical Transfer Characteristics
Fig 20. Normalized On-Resistance
Vs.Temperature
8
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Pre-Irradiation
IRHE7110
Fig 22. Typical Gate Charge Vs.
Fig 21. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 24. Maximum Safe Operating
Fig 23. Typical Source-Drain Diode
Area
ForwardVoltage
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9
IRHE7110
Pre-Irradiation
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 26a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 25. Maximum Drain Current Vs.
CaseTemperature
d(on)
d(off)
Fig 26b. Switching Time Waveforms
Fig27. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
10
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Pre-Irradiation
IRHE7110
15V
DRIVER
L
V
D S
D.U.T
AS
R
G
+
-
V
D D
I
A
V
2
GS
0.01
Ω
t
p
Fig 28a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
Fig 28c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig28b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
Fig 29a. Basic Gate Charge Waveform
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11
IRHE7110
Pre-Irradiation
Foot Notes:
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
= 25V, starting T = 25°C, L=11.1mH
J
GS
DS
DD
Peak I = 3.5A, V
irradiation per MIL-STD-750, method 1019, condition A.
=12V
L
GS
➀➀Total Dose Irradiation with V Bias.
➀➀ I
≤ 3.5A, di/dt ≤ 140A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
GS
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/02
12
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