IRHF53130PBF [INFINEON]
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN;
| 型号： | IRHF53130PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93789A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57130
100V, N-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF57130
IRHF53130
IRHF54130
IRHF58130
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
0.08Ω 11.7A
0.08Ω 11.7A
0.08Ω 11.7A
1000K Rads (Si) 0.10Ω 11.7A
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
11.7
7.4
47
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
0.2
±20
V
GS
E
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
173
11.7
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
4.9
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
Lead Temperature
Weight
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
3/2/00
IRHF57130
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.12
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.08
Ω
V
= 12V, I = 7.4A
GS D
DS(on)
➃
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
8.7
—
—
—
—
—
4.0
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 7.4A ➃
DS
I
10
25
V
= 80V ,V =0V
DSS
DS GS
µA
—
V
= 80V,
DS
= 0V, T = 125°C
V
GS
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 11.7A
g
gs
gd
d(on)
r
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
7.4
20
V
DS
= 50V
t
t
t
t
25
V
DD
= 50V, I = 11.7A
D
100
35
R
G
= 7.5Ω
ns
d(off)
f
30
L
S
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
D
nH
C
C
C
Input Capacitance
—
—
—
1038
362
45
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
11.7
47
S
A
SM
V
t
1.5
202
982
V
ns
µC
T = 25°C, I = 11.7A, V
= 0V ➃
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 11.7A, di/dt ≥ 100A/µs
j
F
V
Q
Reverse Recovery Charge
≤ 25V ➃
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
5.0
thJC
thJA
°C/W
Junction-to-Ambient
175
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHF57130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➄➅
1
Parameter
Up to 600K Rads(Si) 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
100
2.0
—
—
4.0
100
-100
10
100
1.5
—
—
4.0
100
-100
10
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
➃
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
GS
= 20V
GSS
nA
I
—
—
V
= -20 V
GSS
GS
I
—
—
—
—
µA
Ω
V
V
= 80V, V =0V
GS
= 12V, I =7.4A
D
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
➃
0.064
0.08
R
DS(on)
➃
—
—
0.08
1.5
—
—
0.10
1.5
Ω
V
V
= 12V, I =7.4A
D
GS
GS
V
SD
➃
V
= 0V, I = 11.7A
S
1. Part numbers IRHF57130, IRHF53130 and IRHF54130
2. Part number IRHF58130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br
I
Au
36.7
59.8
82.3
309
341
350
39.5
32.5
28.4
100
100
100
100
100
100
100
100
80
100
35
25
100
25
—
120
100
80
60
40
20
0
Br
I
Au
0
-5
-10
-15
-20
VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57130
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
100
10
1
5.0V
5.0V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
11.7A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
1
5
7
9
11 13
15
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHF57130
2000
1600
1200
800
20
16
12
8
V
= 0V,
f = 1MHz
C
GS
I
D
= 11.7A
C
= C + C
SHORTED
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
gd ,
ds
DS
DS
DS
C
= C
rss
C
= C + C
gd
oss
ds
C
iss
C
oss
400
4
C
rss
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
1000
°
T = 25 C
J
OPERATION IN THIS AREA LIMITED
BY R
100
10
1
DS(ON)
°
T = 150 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.1
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
3.5
1
10
100
1000
,Source-to-Drain Voltage (V)
SD
V
Drain-to-Source Voltage (V)
DS,
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHF57130
Pre-Irradiation
RD
12
10
8
VDS
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig 10a. Switching Time Test Circuit
V
DS
2
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
0.05
1
P
0.02
0.01
DM
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x
Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF57130
400
320
240
160
80
I
D
TOP
5.2A
7.4A
BOTTOM 11.7A
15V
DRIVER
L
V
D S
D.U.T
.
R
G
+
V
D D
-
I
AS
12V
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHF57130
Pre-Irradiation
Footnotes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➁ V
= 50V, starting T = 25°C, L= 2.53 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 11.7A, V
= 12V
GS
L
➅ Total Dose Irradiation with V Bias.
➂ I
≤ 11.7A, di/dt ≤ 216A/µs,
DS
= 0 during
SD
DD
80 volt V
DS
applied and V
GS
V
≤ 100V, T ≤ 150°C
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-205AF (ModifiedTO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 3/00
8
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相关型号：
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Power Field-Effect Transistor, 12A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN
INFINEON
IRHF54130PBF
Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
INFINEON
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