IRHF597110 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39); 抗辐射功率MOSFET直通孔（ TO- 39 ）
| 型号： | IRHF597110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |
| 文件： | 总8页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94176C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF597110
100V, P-CHANNEL
TECHNOLOGY
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHF597110 100K Rads (Si)
IRHF593110 300K Rads (Si)
1.0Ω
1.0Ω
-2.6A
-2.6A
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-2.6
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
-1.6
-10.4
15
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.12
±20
V
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
30
mJ
A
AS
I
-2.6
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
1.5
mJ
V/ns
AR
dv/dt
6.6
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
For footnotes refer to the last page
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1
12/03/03
IRHF597110
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.13
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
1.2
1.0
-4.0
—
Ω
V
V
= -12V, I = -2.6A
D
DS(on)
GS
GS
➀
= -12V, I = -1.6A
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
1.3
—
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> -15V, I
= -1.6A ➀
DS
V
DS
I
-10
-25
= -80V ,V =0V
DSS
DS
GS
GS
µA
—
V
= -80V,
DS
= 0V, T = 125°C
V
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
11
V
= -20V
GSS
GS
nA
nC
V
= 20V
GSS
GS
Q
Q
Q
V
=-12V, I = -2.6A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
3.0
4.0
20
V
= -50V
DS
t
t
t
t
V
= -50V, I = -2.6A
DD
GS
D
G
20
V
=-12V, R = 7.5Ω
ns
Turn-Off Delay Time
Fall Time
30
d(off)
f
95
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
—
—
—
370
100
7.0
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-2.6
-10.4
-5.0
100
S
A
SM
SD
V
T = 25°C, I = -2.6A, V
= 0V ➀
j
S
GS
Reverse Recovery Time
ns
T = 25°C, I = -2.6A, di/dt ≤−100A/µs
j
rr
F
V
Q
Reverse Recovery Charge
250
nC
≤ -25V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
8.3
175
thJC
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHF597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads(Si)1
Min Max
300K Rads (Si)2 Units
Min Max
Test Conditions
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
-100
-2.0
—
—
-4.0
-100
100
-100
-2.0
—
—
-5.0
V
= 0V, I = -1.0mA
GS D
DSS
V
V
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
-100
100
V
= -20V
= 20 V
GS
GSS
GS
nA
—
—
V
GSS
I
—
-10
—
-10
µA
V
= -80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
➀
—
0.916
—
0.916
Ω
V
= -12V, I =-1.6A
D
GS
DS(on)
V
SD
➀
—
-5.0
—
-5.0
V
V
= 0V, I = -2.6A
S
GS
1. Part number IRHF597110
2. Part number IRHF593110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
MeV/(mg/cm2)
28.0
Energy
(MeV)
285
Range
(µm) @VGS=0V @VGS=5V @ VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
43.0
39.0
32.6
-100
-100
-60
-100
-100
—
-100
-70
—
-70
- 50
—
-60
-40
—
36.8
305
59.8
343
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF597110
Pre-Irradiation
10
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
TOP
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-5.0V
BOTTOM -5.0V
BOTTOM -5.0V
1
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-2.6A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
=-12V
GS
5
6
7
8
9
10
11
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHF597110
600
20
16
12
8
V
= 0V,
f = 1MHz
C
I
D
= -2.6A
GS
V
V
V
=-80V
=-50V
=-20V
C
= C + C
SHORTED
ds
DS
DS
DS
iss
gs
gd ,
gd
C
= C
gd
rss
500
400
300
200
100
0
C
= C + C
oss
ds
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
2
4
6
8
10
12
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
°
T = 150 C
J
1
°
T = 25 C
J
1ms
Tc = 25°C
10ms
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHF597110
Pre-Irradiation
RD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
0.05
1
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHF597110
L
V
D S
60
50
40
30
20
10
0
I
D
TOP
-1.2A
-1.6A
BOTTOM -2.6A
D .U .T
R
G
V
D D
A
I
A S
D R IV ER
-VGS
0.0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
25
50
75
100
125
150
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+ DS
Q
Q
GS
GD
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
IRHF597110
Footnotes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
=-25V, starting T = 25°C, L= 8.9 mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
J
Peak I = -2.6A, V
= -12V
GS
L
➀ Total Dose Irradiation with V
Bias.
➀ I
≤ -2.6A, di/dt ≤ -120A/µs,
DS
applied and V = 0 during
GS
SD
DD
-80 volt V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions —TO-205AF (ModifiedTO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/03
8
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