IRHF7330SESCSPBF [INFINEON]

Power Field-Effect Transistor, 3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN;


型号：	IRHF7330SESCSPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN 开关脉冲晶体管
文件：	总8页 (文件大小：123K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91864

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHF7330SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Product Summary

Part Number

400Volt, 1.2Ω, SEE RAD HARD HEXFET

International Rectifier’s SEE RAD HARD technology

HEXFETs demonstrate immunity to SEE failure. Ad-

ditionally, under identical pre- and post-irrradiation

test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal op-

eration within a few microseconds.Since the SEE pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

BVDSS

RDS(on)

IRHF7330SE

400V

1.2Ω

3.0A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments.

Electrically Isolated

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHF7330SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

3.0

@ V

= 12V, T = 100°C Continuous Drain Current

1.9

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.2

±20

140

3.0

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

2.5

V/ns

dv/dt

6.7

-55 to 150

Storage Temperature Range

Lead Temperature

^oC

STG

300 (0.063 in. (1.6mm) from

case for 10 sec.)

Weight

0.98 (typical)

www.irf.com

2/26/99

IRHF7330SE Devices

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

400

—

= 0V, I = 1.0mA

DSS

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.50

V/°C

DSS

Voltage

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

1.2

Ω

= 12V, I = 1.9A

GS D

DS(on)

2.5

1.3

—

4.5

—

= V , I = 1.0mA

GS(th)

Ω

S ( )

> 15V, I

= 1.9A

250

= 0.8 x Max Rating,V =0V

DSS

DS GS

µ A

—

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

5.0

100

-100

= 20V

= -20V

GSS

= 12V, I = 3.0A

V = Max Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

7.0

d(on)

= 200V, I = 3.0A,

DD D

Rise Time

Turn-Off Delay Time

= 7.5Ω

d(off)

Fall Time

symbol show-

Measured from drainlead,

6mm (0.25 in) from package

tocenterofdie.

Measured from source lead,

6mm (0.25 in) from package

to source bonding pad.

Modified MOSFET

ingtheinternal inductances.

Internal Drain Inductance

—

Internal Source Inductance

—

Input Capacitance

—

555

160

—

= 0V, V

= 25V

f = 1.0MHz

iss

GS DS

Output Capacitance

Reverse Transfer Capacitance

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

—

3.0

Modified MOSFET symbol showingtheintegral

reversep-njunctionrectifier.

Pulse Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.4

516

3.0

T = 25°C, I = 3.0A, V

= 0V

µC

T = 25°C, I = 3.0A, di/dt ≤ 100A/µs

≤ 50V

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

5.0

thJC

thJA

°C/W

Junction-to-Ambient

175

Typical socket mount

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Radiation Characteristics

IRHF7330SE Devices

Radiation Performance of Rad Hard HEXFETs

dose rate test circuits that are used. Both pre- and

post-irradiation performance are tested and specified

using the same drive circuitry and test conditions in

order to provide a direct comparison. It should be

noted that at a radiation level of 1 x 10⁵Rads (Si) the

only parameter limit change is V_GSThminimum .

International Rectifier Radiation Hardened HEXFETs

are tested to verify their hardness capability.The hard-

ness assurance program at International Rectifier

comprises 3 radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019 condition A. International Rectifier has

imposed a standard gate condition of 12 volts per note

High dose rate testing may be done on a special

request basis using a dose rate up to 1 x 10¹²Rads

(Si)/Sec ( See Table 2).

bias condition equal to 80% of the de-

5 and a V

vice rated voltage per note 6. Post-irradiation limits

of the devices irradiated to 1 x 10⁵Rads (Si) are pre-

sented in Table 1, column 1, IRHF7330SE. The val-

International Rectifier radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environments. Single Event Effects

ues in Table 1 will be met for either of the two low characterization is shown in Table 3.

Table 1. Low Dose Rate ꢀ

IRHF7330SE

Parameter

100K Rads (Si)

Units

Test Conditions

= 0V, I = 1.0mA

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

400

2.0

—

4.5

100

-100

DSS

= V , I = 1.0mA

GS(th)

= 20V

GSS

DSS

—

= -20V

—

µA

Ω

=0.8 x Max Rating, V =0V

DS GS

—

1.2

V = 12V, I = 1.9A

DS(on)1

On-State Resistance One

Diode Forward Voltage

—

1.4

= 25°C, I = 3.0A,V

= 0V

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Min Typ Max Min Typ Max Units

Parameter

Test Conditions

Drain-to-Source Voltage

—

320

—

320

Applied drain-to-source voltage during

gamma-dot

DSS

—

133

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

(µm)

Bias

(V)

Bias

(V)

Ion

(MeV/mg/cm²)

(ions/cm²)

3x 10⁵

~43

400

-5

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IRHF7330SE Devices

Pre-Irradiation

100

VGS

15V

TOP

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

0.1

5.0V

0.1

0.01

20µs PULSE WIDTH

T = 25 C

T = 150 C

0.001

.001

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

100

T = 150 C

T = 25 C

= 50V

20µs PULSE WIDTH

= 12V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160

10 11

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

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Pre-Irradiation

IRHF7330SE Devices

1200

= 3A

= 0V,

f = 1MHz

C SHORTED

= C + C

= 320V

= 200V

= 80V

iss

gd ,

= C

rss

1000

800

600

400

200

= C + C

oss

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

24 32

100

, Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

10us

100us

1ms

T = 25 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

0.1

0.0

0.1

0.4

0.8

1.2

1.6

2.0

100

1000

,Source-to-Drain Voltage (V)

, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRHF7330SE Devices

Pre-Irradiation

R_D

4.0

3.0

2.0

1.0

0.0

V_DS

V_GS

12V

D.U.T.

R_G

⁺V_DD

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P

+ T

thJC C

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation

IRHF7330SE Devices

400

300

200

100

TOP

1.3A

1.9A

BOTTOM 3.0A

15V

DRIVER

D S

D.U.T

D D

1202VV

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature( C)

(BR )D SS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHF7330SE Devices

Pre-Irradiation

ꢀTotal Dose Irradiation with V

Bias.

= 0 during

Repetitive Rating; Pulse width limited by

maximum junction temperature.

12 volt V

applied and V

irradiation per MIL-STD-750, method 1019, condition A.

Refer to current HEXFET reliability report.

Total Dose Irradiation with V Bias.

(pre-irradiation)

@ Starting T = 25°C,

= 0.8 rated BV

= [0.5 L

(I ²) ], V_DD=50V

applied and V

DSS

Peak I = 3.0A, V

* * L

= 0 during irradiation per

=12 V, 25 ≤ R ≤ 200Ω

MlL-STD -750, method 1019, condition A.

≤ 3.0A, di/dt ≤ 400A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV

, T ≤ 150°C

DSS J

Suggested RG = 7.5Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

All Pre-Irradiation and Post-Irradiation test

conditions are identical to facilitate direct

comparison for circuit applications.

Case Outline and Dimensions —TO-205AF (Modified TO-39)

All dimensions are shown millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

http://www.irf.com/

Data and specifications subject to change without notice. 2/99

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IRHF7330SESCSPBF [INFINEON]

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