IRHG3110 [INFINEON]
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PIN;
| 型号： | IRHG3110 |
| 厂家： | 
INFINEON TECHNOLOGIES AG |
| 描述： | Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PIN CD 开关 晶体管 |
| 文件： | 总8页 (文件大小：121K) |
| 下载： | 下载PDF数据表文档文件 |
IRHG3214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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6
IRF
IRHG3214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
IRF
IRHG3214PBF
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
IRHG3214PBF
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
IRHG4110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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29
IRF
IRHG4110PBF
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
INFINEON
IRHG4214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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11
IRF
IRHG4214
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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19
IRF
IRHG4214PBF
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
IRHG53110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
IRF
IRHG53110PBF
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
IRHG54110
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
IRF
IRHG54110PBF
Power Field-Effect Transistor, 1.6A I(D), 100V, 0.29ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
IRF
IRHG563110
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNELWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
IRF
IRHG563110
TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIPWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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15
ETC
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