IRHG9110 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB); 抗辐射功率MOSFET直通孔（ MO- 036AB ）
| 型号： | IRHG9110 |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
| 文件： | 总8页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93819B
IRHG9110
100V, QUAD P-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
MOSFET TECHNOLOGY
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHG9110
100K Rads (Si)
1.1Ω
-0.75A
-0.75A
IRHG93110
300K Rads (Si) 1.1Ω
MO-036AB
Features:
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
-0.75
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
-0.5
-3.0
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
DM
@ T = 25°C
P
1.4
W
W/°C
V
D
C
0.011
±20
V
GS
E
AS
75
mJ
A
I
-0.75
0.14
AR
E
AR
dv/dt
mJ
V/ns
2.4 ➀
-55 to 150
T
J
T
Storage Temperature Range
Lead Temperature
oC
g
STG
300 (0.63in./1.6mm from case for 10s)
1.3 (Typical)
Weight
For footnotes refer to the last page
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1
02/20/03
IRHG9110
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-100
—
—
—
—
V
V
= 0V, I = -1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.11
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
1.2
1.1
V
= -12V, I = -0.75A
DS(on)
GS D
➀
Ω
V
= -12V, I =- 0.5A
D
GS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
0.6
—
-4.0
—
V
S ( )
V
DS
= V , I = -1.0mA
GS(th)
fs
GS
D
Ω
g
V
> -15V, I
= -0.5A ➀
DS
DS
I
-25
-250
V
= -80V, V = 0V
GS
DSS
DS
µA
—
V
= -80V,
DS
= 0V, T =125°C
V
GS
J
I
I
Q
Q
Q
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
15
V
= - 20V
= 20V
GSS
GSS
GS
nA
nC
V
GS
V
= -12V, I = -0.75A,
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
4.0
4.3
22
V
= -50V
DS
t
t
t
t
V
DD
V
= -50V, I = -0.75A,
D
19
= -12V, R = 24Ω
GS G
ns
Turn-Off Delay Time
Fall Time
66
51
d(off)
f
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
335
100
22
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
oss
rss
GS DS
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-0.75
-3.0
-2.5
90
S
A
V
SM
V
T = 25°C, I = -0.75A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS T = 25°C, I = -0.75A, di/dt ≥ -100A/µs
j
F
nC
rr
RR
257
V
DD
≤ -25V ➀
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
For footnotes refer to the last page
2
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Radiation Characteristics
IRHG9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀ (Per Die)
Parameter
Min
Drain-to-Source Breakdown Voltage -100
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Max
Min
Max
BV
—
- 4.0
-100
100
-25
-100
-2.0
—
—
-5.0
-100
100
-25
V = 0V, I = -1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
- 2.0
—
V
= V , I = -1.0mA
GS(th)
GS
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
—
—
V
GS
GSS
I
—
—
µA
V =-80V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
➀
—
1.06
—
1.06
Ω
V
= -12V, I =-0.5A
D
GS
DS(on)
R
DS(on)
➀
—
—
1.1
—
—
1.1
Ω
V
GS
= -12V, I =-0.5A
D
V
SD
➀
-2.5
-2.5
V
V
= 0V, I = -0.75A
GS S
1. Part number IRHG9110
2. Part number IRHG93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
MeV/(mg/cm2))
28.0
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
43.0
39.0
32.6
-100
-100
-60
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
36.8
59.8
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHG9110
Pre-Irradiation
100
100
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
10
BOTTOM -5.0V
BOTTOM-5.0V
-5.0V
-5.0V
1
0.1
1
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.01
0.01
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-0.75A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
= -12V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
7
9
11 13
15
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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Pre-Irradiation
IRHG9110
20
16
12
8
600
500
400
300
200
100
I
D
= -0.75A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
iss
gs
gd ,
gd
ds
V
V
V
=-80V
=-50V
=-20V
C
= C
gd
DS
DS
DS
rss
C
= C + C
ds
oss
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
0
10
100
0
2
4
6
8
10
12
14
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
1ms
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHG9110
Pre-Irradiation
RD
0.8
0.6
0.5
0.3
0.2
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0.0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
6
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Pre-Irradiation
IRHG9110
L
V
D S
200
160
120
80
I
D
TOP
-0.34A
-0.47A
BOTTOM-0.75A
D .U .T
R
G
.
V
D D
A
I
A S
D R IV ER
V
GS
-20V
0.0 1
Ω
t
p
15V
40
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHG9110
Pre-Irradiation
Footnotes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
applied and V = 0 during
DS
-12 volt V
➀ V
= - 25V, starting T = 25°C, L= 267mH,
GS
irradiation per MIL-STD-750, method 1019, condition A
DD
J
Peak I = - 0.75A, V
GS
= -12V
L
➀ Total Dose Irradiation with V Bias.
➀ I
≤ - 0.75A, di/dt ≤ - 132A/µs,
DS
applied and V = 0 during
GS
SD
DD
-80 volt V
V
≤ -100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A
J
Case Outline and Dimensions — MO-036AB
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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