IRHLNJ797034A [INFINEON]
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached;![IRHLNJ797034A](http://pdffile.icpdf.com/pdf2/p00293/img/icpdf/IRHLNJ793034_1775777_icpdf.jpg)
型号: | IRHLNJ797034A |
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描述: | Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached 开关 脉冲 晶体管 |
文件: | 总9页 (文件大小:218K) |
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PD-97302C
2N7624U3
IRHLNJ797034
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHLNJ797034
IRHLNJ793034
Radiation Level RDS(on)
100K Rads (Si) 0.072Ω
300K Rads (Si) 0.072Ω
ID
22A*
22A*
SMD-0.5
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Light Weight
n
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@V
@V
= -4.5V,T = 25°C Continuous Drain Current
-22*
D
D
GS
GS
C
A
I
= -4.5V,T = 100°C Continuous Drain Current
-14.9
-88
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
57
W
W/°C
V
D
C
0.45
±10
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
GS
E
79
mJ
A
AS
I
-22
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
5.7
mJ
V/ns
AR
dv/dt
-12.3
-55 to 150
T
J
°C
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/02/16
IRHLNJ797034, 2N7624U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
-60
—
—
V
V
= 0V, I = -250µA
D
DSS
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
-0.055
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.072
Ω
V
= -4.5V, I = -14.9A
DS(on)
GS D
-1.0
—
16
—
—
3.5
—
—
—
-2.0
—
—
-1.0
-15
V
mV/°C
S
V
= V , I = -250µA
GS(th)
DS
GS
D
∆V
g
/∆T
J
GS(th)
fs
V
= -10V, I
= -14.9A
DS
DS
V
I
= -48V ,V = 0V
DSS
DS
GS
µA
—
V
= -48V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Q
Q
Q
t
t
t
t
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
36
10
18
V
V
= -10V
= 10V
GSS
GSS
GS
GS
nA
V
= -4.5V, I = -22A
g
gs
gd
d(on)
r
GS D
nC
V
= -30V
DS
32
V
= -30V, I = -22A,
DD D
V = -5.0V, R = 7.5Ω
GS
250
100
102
—
G
ns
d(off)
f
L
+ L
Measured from the center of
S
D
nH
drain pad to center of source pad
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2261
583
91
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
GS
DS
C
C
pF
oss
rss
f = 1.0MHz, open drain
Ω
R
g
Gate Resistance
20
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
-22*
-88
-5.0
110
132
S
SM
SD
rr
A
V
ns
nC
T = 25°C, I = -22A, V
= 0V
j
S
GS
T = 25°C, I = -22A, di/dt ≤ -100A/µs
j
F
Q
V
DD
≤ -50V
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
2.2 °C/W
thJC
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHLNJ797034, 2N7624U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ꢀ
Parameter
Upto 300K Rads (Si)1 Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
-60
-1.0
—
—
—
—
V
= 0V, I = -250µA
GS D
DSS
V
V
-2.0
-100
100
-1.0
V
GS
= V , I = -250µA
GS(th)
DS
D
I
V
GS
= -10V
GSS
nA
µA
I
V
= 10V
GS
GSS
I
V
= -48V, V = 0V
DS GS
DSS
R
DS(on)
On-State Resistance (TO-3)
—
0.076
Ω
V
= -4.5V, I = -14.9A
D
GS
R
DS(on)
Static Drain-to-Source On-state
Resistance (SMD-0.5)
—
—
0.072
-5.0
Ω
V
= -4.5V, I = -14.9A
D
GS
V
SD
Diode Forward Voltage
V
V
= 0V, I = -22A
GS
D
1. Part numbers IRHLNJ797034, IRHLNJ793034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm2))
(MeV)
(µm)
@VGS=
0V
@VGS=
2V
@VGS=
4V
@VGS=
5V
@VGS=
6V
@VGS=
7V
38 ± 5%
62 ± 5%
85 ± 5%
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-60
-
-40
-
-
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHLNJ797034, 2N7624U3
Pre-Irradiation
100
10
1
100
VGS
VGS
TOP
-10V
-5.0V
-4.5V
-4.0V
-3.0V
-2.7V
-2.5V
TOP
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
BOTTOM -2.3V
BOTTOM -2.3V
-2.3V
10
-2.3V
µ
20 s PULSE WIDTH
Tj = 150°C
µ
20 s PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
0.1
1
10
100
1000
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= -22A
D
T
= 150°C
J
T
= 25°C
J
V
= -25V
DS
V
= -4.5V
GS
µ
60 s PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
2.5
3
3.5
4
4.5
5
-V , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHLNJ797034, 2N7624U3
160
140
120
100
80
140
130
120
110
100
90
I
= -22A
D
T
= 150°C
= 25°C
J
T
T
= 150°C
J
J
80
60
70
T
J
60
40
= 25°C
50
20
Vgs = -4.5V
40
0
30
2
4
6
8
10
12
0
10 20 30 40 50 60 70 80
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 5. Typical On-Resistance Vs
Fig 6. Typical On-Resistance Vs
GateVoltage
DrainCurrent
75
70
65
60
55
2.5
2.0
1.5
1.0
0.5
0.0
I
= -1.0mA
D
I
I
I
I
= -50µA
D
D
D
D
= -250µA
= -1.0mA
= -150mA
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Temperature ( °C )
T
T
J
J
Fig 7. Typical Drain-to-Source
BreakdownVoltageVsTemperature
Fig 8. Typical Threshold Voltage Vs
Temperature
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5
IRHLNJ797034, 2N7624U3
Pre-Irradiation
3600
12
10
8
V
= 0V,
= C
f = 1 MHz
GS
V
= -48V
DS
C
C
C
+ C , C
SHORTED
I
= -22A
iss
gs
gd
ds
3200
2800
2400
2000
1600
1200
800
D
VDS = -30V
VDS = -12V
= C
rss
oss
gd
= C + C
ds
gd
C
iss
6
C
4
oss
2
FOR TEST CIRCUIT
SEE FIGURE 17
400
C
rss
0
0
1
10
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
Q
G,
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
25
20
15
10
5
100
LIMITED BY PACKAGE
T
= 150°C
J
10
1
T
= 25°C
J
V
= 0V
5
GS
0.1
0
0
1
-V
2
3
4
6
25
50
T
75
100
125
150
, Source-to-Drain Voltage (V)
, Case Temperature (°C)
SD
C
Fig 12. Maximum Drain Current Vs.
Fig 11. Typical Source-to-Drain Diode
CaseTemperature
ForwardVoltage
6
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Pre-Irradiation
IRHLNJ797034, 2N7624U3
140
120
100
80
1000
I
OPERATION IN THIS AREA LIMITED
BY R (on)
D
TOP
-9.8A
-13.9A
BOTTOM -22A
DS
100
10
1
100 s
µ
60
1ms
10ms
DC
40
Tc = 25°C
Tj = 150°C
Single Pulse
20
0.1
0
1
10
, Drain-to-Source Voltage (V)
100
25
50
75
100
125
150
-V
DS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. DrainCurrent
10
D = 0.50
1
P
DM
0.20
0.10
t
1
t
2
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHLNJ797034, 2N7624U3
Pre-Irradiation
L
I
AS
V
DS
-
+
D.U.T
R
G
VDD
A
I
AS
DRIVER
V
-2
GS
0.01
t
Ω
p
t
p
15V
V
(BR)DSS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
-12V
1
-4.5V
.3µF
-
Q
V
GS
GD
+
DS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
RD
VDS
t
t
r
t
t
f
d(on)
d(off)
V
GS
VGS
D.U.T.
10%
RG
-
+
VDD
VGS
90%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
DS
Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
8
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Pre-Irradiation
Footnotes:
IRHLNJ797034, 2N7624U3
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Repetitive Rating; Pulse width limited by
maximum junction temperature.
ꢀTotal Dose Irradiation with V
Bias.
GS
= 0 during
-10 volt V
applied and V
V
= -25V, starting T = 25°C, L = 0.32mH
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
J
Peak I = -22A, V
GS
= -10V
L
Total Dose Irradiation with V
Bias.
I
≤ -22A, di/dt ≤ -350A/µs,
DS
= 0 during
SD
-48 volt V
applied and V
V
DD
≤ -60V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 101 N. Sepulveda, El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2016
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9
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