IRHM2C50SEUPBF [INFINEON]
Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;型号: | IRHM2C50SEUPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:98K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91252A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM2C50SE
IRHM7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Product Summary
600Volt, 0.6Ω, (SEE) RAD HARD HEXFET
Part Number
IRHM2C50SE
IRHM7C50SE
BVDSS
600V
600V
RDS(on)
0.60Ω
0.60Ω
ID
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under identical pre- and post-irrradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal op-
eration within a few microseconds.Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
10.4A
10.4A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Electrically Isolated
Ceramic Eyelets
Pre-Irradiation
Absolute Maximum Ratings
Parameter
IRHM2C50SE, IRHM7C50SE Units
I
D
@ V
= 12V, T = 25°C Continuous Drain Current
10.4
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
6.5
41.6
151
GS
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
W
W/°C
V
D
C
1.2
V
GS
±20
E
Single Pulse Avalanche Energy
Avalanche Current
500
mJ
A
AS
I
10.4
15.1
4.0
AR
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
mJ
V/ns
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
STG
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
www.irf.com
1
1/6/99
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
600
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.6
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.5
3.0
—
—
—
—
—
—
—
0.60
0.65
4.5
—
V
= 12V, I = 6.5A
GS D
DS(on)
Ω
V
= 12V, I = 10.4A
GS
D
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 6.5A
DS
DS
I
50
250
V
= 0.8 x Max Rating,V =0V
DSS
DS GS
µ A
—
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
150
30
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 10.4A
g
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
V
DS
= Max Rating x 0.5
gs
75
gd
d(on)
r
t
t
t
t
28
V
= 300V, I = 10.4A,
DD D
Rise Time
Turn-Off Delay Time
75
75
R
= 2.35Ω
G
ns
d(off)
f
Fall Time
75
symbol show-
Measured from drainlead,
6mm (0.25 in) from package
tocenterofdie.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET
ingtheinternal inductances.
L
Internal Drain Inductance
—
D
nH
L
Internal Source Inductance
—
8.7
—
S
C
C
C
Input Capacitance
—
—
—
2510
400
110
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
10.4
41.6
Modified MOSFET symbol showingtheintegral
reversep-njunctionrectifier.
S
A
Pulse Source Current (Body Diode)
SM
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.6
750
9.8
V
T = 25°C, I = 10.4A, V
= 0V
GS
j
SD
S
ns
µC
T = 25°C, I = 10.4A, di/dt ≤ 100A/µs
j
rr
F
V
≤ 50V
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.83
—
°C/W
Junction-to-Ambient
48
Typical socket mount
2
www.irf.com
Radiation Characteristics
IRHM2C50SE, IRHM7C50SE Devices
Radiation Performance of Rad Hard HEXFETs
met for either of the two low dose rate test circuits
that are used. Both pre- and post-irradiation perfor-
mance are tested and specified using the same drive
circuitry and test conditions in order to provide a di-
rect comparison. It should be noted that at a radiation
level of 1 x 105 Rads (Si) the only parameter limit
change is VGSTh minimum .
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability.The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per note
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec ( See Table 2).
5 and a V
bias condition equal to 80% of the de-
DS
vice rated voltage per note 6. Pre and Post-irradia-
tion limits of the devices irradiated to 0.5 x 105 Rads
(Si) and 1 x 105 Rads (Si) are identical and pre-
sented in Table 1, column 1, IRHM2C50SE and col-
umn 2, IRHM7C50SE. The values in Table 1 will be
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
Table 1. Low Dose Rate ꢀ
IRHM2C50SE IRHM7C50SE
50 K Rads (Si) 100 K Rads (Si) Units
Parameter
Test Conditions
= 0V, I = 1.0mA
Min Max
Min
Max
BV
Drain-to-Source Breakdown Voltage 600
—
4.5
100
-100
50
600
2.0
—
—
4.5
100
-100
50
V
GS
DSS
D
V
V
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
2.5
—
—
—
—
V
= V , I = 1.0mA
GS(th)
GS
DS
GS
D
I
I
I
V
= 20V
GSS
GSS
DSS
nA
—
—
V
= -20 V
GS
µA
V
=0.8 x Max Rating, V
DS
=0V
GS
R
0.6
—
0.6
Ω
V
= 12V, I =6.5A
GS
D
DS(on)1
On-State Resistance One
V
Diode Forward Voltage
—
1.6
—
1.6
V
T
= 25°C, I = 10.4A,V
= 0V
GS
SD
C
S
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Parameter
Test Conditions
V
Drain-to-Source Voltage
—
—
480
—
—
480
V
Applied drain-to-source voltage during
gamma-dot
DSS
I
—
—
—
6.4
16
20
—
—
—
—
—
—
6.4
2.3
137
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
A/µsec Rate of rise of photo-current
µH Circuit inductance required to limit di/dt
L
1
Table 3. Single Event Effects
LET (Si)
Fluence
Range
(µm)
V
Bias
(V)
V
Bias
(V)
DS
GS
Ion
(MeV/mg/cm2)
(ions/cm2)
1x 105
Ni
28
~28
480
-5
www.irf.com
3
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
100
10
1
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
1
5.0V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10.4A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
5
6
7
8
9
10 11
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHM2C50SE, IRHM7C50SE Devices
20
5000
I
D
= 10.4A
V
= 0V,
f = 1MHz
C SHORTED
ds
V
V
V
= 480V
= 300V
= 120V
GS
C
DS
DS
DS
= C + C
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
gd
16
12
8
4000
3000
2000
1000
0
oss
ds
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
30
Q
60
90
120
150
1
10
100
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
10us
J
100us
1ms
°
T = 25 C
1
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.6
1.0
1.4
1.8
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
5
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
RD
12
10
8
VDS
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig 10a. Switching Time Test Circuit
V
DS
2
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHM2C50SE, IRHM7C50SE Devices
1200
I
D
TOP
4.7A
6.6A
BOTTOM 10.4A
1000
800
600
400
200
0
15V
DRIVER
L
V
D S
D.U.T
R
G
+
V
D D
-
I
AS
122V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHM2C50SE, IRHM7C50SE Devices
Pre-Irradiation
ꢀTotal Dose Irradiation with V
Bias.
GS
= 0 during
Repetitive Rating; Pulse width limited by
maximum junction temperature.
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
Refer to current HEXFET reliability report.
Total Dose Irradiation with V Bias.
DS
(pre-irradiation)
@ Starting T = 25°C,
J
V
= 0.8 rated BV
E
= [0.5 L
(I 2) ], VDD =50V
DS
applied and V
DSS
AS
Peak I = 10.4A, V
* * L
= 0 during irradiation per
GS
=12 V, 25 ≤ R ≤ 200Ω
L
GS
G
MlL-STD -750, method 1019, condition A.
I
SD
≤ 10.4A, di/dt ≤ 400A/µs,
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
V
≤ BV
, T ≤ 150°C
DSS J
DD
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
All Pre-Irradiation and Post-Irradiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-254AA
.12
( .005 )
13.84
13.59
(
(
.545
.535
)
)
-B-
6.60
6.32
(
(
.260
.249
)
)
3.78
3.53
(
(
.149
.139
)
)
1.27
1.02
(
(
.050
.040
)
)
-A-
20.32
20.07
(
(
.800
.790
)
)
17.40
16.89
(
(
.685
.665
)
)
13.84
13.59
(
(
.545
.535
)
)
1
2 3
W
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14
0.89
(
(
.045
.035
)
)
3X
3.81
(
.150
)
3.81
( .150 )
2X
.50
.25
(
(
.020
.010
)
)
M
M
C
C
A
M
B
LEGEND
1- DRAIN
2- SOURCE
3- GATE
LEGEND
1- DRAIN
2- SOURCE
3- GATE
NOTE S:
1. D IM EN SION IN G
&
TO LERANC IN G PER AN SI Y14.5M , 1982.
IN M ILLIM ETERS INCH ES ).
2. ALL DIM ENSIO NS AR E SHO W
N
(
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted,
machined, or have other operations perfomed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 1/99
8
www.irf.com
相关型号:
IRHM3054D
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM3054DPBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM3054PBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
IRHM3054U
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM3054UPBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM3064D
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM3064DPBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM3064PBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
IRHM3064U
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
IRHM3064UPBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明