IRHM54064DPBF [INFINEON]

Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN;


型号：	IRHM54064DPBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, 3 PIN 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总8页 (文件大小：173K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ꢁ

PD - 93792D

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

IRHM57064

60V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHM57064

IRHM53064

IRHM54064

IRHM58064

100K Rads (Si) 0.012Ω 35A*

300K Rads (Si) 0.012Ω 35A*

600K Rads (Si) 0.012Ω 35A*

1000K Rads (Si) 0.013Ω 35A*

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Single Event Effect (SEE) Hardened

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

35*

140

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

1090

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

20.8

4.8

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6 mm from case for10s )

9.3 (Typical )

* Current is limited by package

For footnotes refer to the last page

07/19/04

IRHM57064

Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

—

= 0V, I = 1.0mA

Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

—

0.063

V/°C

DSS

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

0.012

Ω

= 12V, I = 35A

GS D

DS(on)

2.0

—

4.0

—

S ( )

= V , I = 1.0mA

GS(th)

Ω

>= 15V, I

= 35A Ã

= 48V ,V =0V

DSS

DS GS

µA

—

= 48V,

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

—

6.8

100

-100

160

125

= 20V

= -20V

GSS

=12V, I = 35A

d(on)

GS D

= 50V

= 30V, I = 35A

=12V, R = 2.35Ω

GS G

d(off)

+ L

—

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

6300

2300

—

= 0V, V

= 25V

f = 1.0MHz

iss

oss

rss

GS DS

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

35*

140

1.2

200

818

T = 25°C, I = 35A, V

= 0V Ã

T = 25°C, I = 35A, di/dt ≤100A/µs

≤ 25V Ã

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

—

0.21

—

0.6

—

thJC

thCS

thJA

°C/W

Typical socket mount

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHM57064

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter

Up to 600K Rads(Si) 1000K Rads (Si)²Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

2.0

—

4.0

100

-100

0.0061

—

4.0

100

-100

0.0071

= 0V, I = 1.0mA

DSS

GS D

1.5

—

= V , I = 1.0mA

DS D

GS(th)

= 20V

GSS

= -20 V

GSS

µA

Ω

= 48V, V =0V

DSS

DS GS

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (TO-254)

Diode Forward Voltage

= 12V, I = 35A

DS(on)

—

0.012

1.2

—

0.013

1.2

Ω

= 12V, I = 35A

—

= 0V, I = 35A

GS S

1. Part numbers IRHM57064, IRHM53064 and IRHM54064

2. Part number IRHM58064

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

VDS (V)

Ion

LET

Energy

Range

(MeV/(mg/cm²)) (MeV)

(µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V

37.3

86.6

285

300

2068

36.8

106

-5

-10

VGS

-15

-20

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHM57064

Pre-Irradiation

1000

100

VGS

15V

TOP

15V

TOP

12V

10V

9.0V

8.0V

7.0V

6.0V

12V

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

BOTTOM5.0V

100

5.0V

20µs PULSE WIDTH

T = 25 C

20µs PULSE WIDTH

T = 150 C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

2.0

1.5

1.0

0.5

0.0

35A

T = 150 C

T = 25 C

= 25V

=12V

20µs PULSE WIDTH

5.0

-60 -40 -20

20 40 60 80 100 120 140 160

6.0

7.0

8.0 9.0 10.0

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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Pre-Irradiation

IRHM57064

10000

= 35A

= 0V,

f = 1MHz

= 48V

= 30V

= 12V

= C + C

SHORTED

iss

gd ,

= C

rss

= C + C

8000

6000

4000

2000

oss

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

100

120

160

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

T = 150 C

100µs

1ms

T = 25 C

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

2.0

0.1

0.0

0.5

1.0

1.5

2.5

100

1000

,Source-to-Drain Voltage (V)

, Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRHM57064

Pre-Irradiation

R_D

120

100

V_DS

LIMITED BY PACKAGE

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1

0.10

0.05

0.02

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation

IRHM57064

3000

2400

1800

1200

600

TOP

15.7A

22A

BOTTOM 35A

15V

DRIVER

D.U.T

20V

0.01

Ω

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T_J,Junction Temperature (°C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50KΩ

.2µF

12V

.3µF

12 V

D.U.T.

3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHM57064

Footnotes:

Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with V Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

12 volt V

applied and V

Á V

= 25V, starting T = 25°C, L= 1.8mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = 35A, V

= 12V

Å Total Dose Irradiation with V

Bias.

Â I

≤ 35A, di/dt ≤ 265A/µs,

= 0 during

48 volt V

applied and V

≤ 60V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — TO-254AA

0.12 [.005]

13.84 [.545]

13.59 [.535]

6.60 [.260]

6.32 [.249]

3.78 [.149]

3.53 [.139]

1.27 [.050]

1.02 [.040]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

13.84 [.545]

13.59 [.535]

14.48 [.570]

12.95 [.510]

0.84 [.033]

MAX.

1.14 [.045]

0.89 [.035]

3.81 [.150]

0.36 [.014]

B A

NOTES:

PIN ASSIGNMENTS

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: INCH.

1 = DRAIN

2 = SOURCE

3 = GATE

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 08/2004

www.irf.com

IRHM54064DPBF [INFINEON]

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