IRHM7250SE [INFINEON]
RADIATION HARDENED POWER MOSFET; 抗辐射功率MOSFET型号: | IRHM7250SE |
厂家: | Infineon |
描述: | RADIATION HARDENED POWER MOSFET |
文件: | 总8页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91779A
IRHM7250SE
200V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHM7250SE
100K Rads (Si)
0.10Ω
26A
TO-254AA
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
26
16
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
104
DM
@ T = 25°C
P
D
150
W
W/°C
V
C
Linear Derating Factor
1.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
26
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
5.9
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
For footnotes refer to the last page
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1
5/15/01
IRHM7250SE
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.26
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.5
7.5
—
—
—
—
—
—
—
0.10
0.105
4.5
V
V
= 12V, I = 16A
D
DS(on)
GS
GS
➀
Ω
= 12V, I = 26A
D
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
—
S ( )
V
> 15V, I
= 16A ➀
DS
DS
I
25
250
V
= 160V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
180
35
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 26A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
= 100V
DS
83
t
t
t
t
33
V
= 100V, I =26A,
DD D
V =12V, R = 2.35Ω
GS
140
140
140
—
G
ns
d(off)
f
L
+ L
Total Inductance
S
D
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
C
C
C
Input Capacitance
Output Capacitance
—
—
—
3100
990
—
—
—
V
= 0V, V = 25V
DS
f = 1.0MHz
iss
oss
rss
GS
pF
Reverse Transfer Capacitance
380
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
26
S
A
Pulse Source Current (Body Diode) ➀
104
SM
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.9
550
8.8
V
T = 25°C, I = 26A, V
= 0V ➀
j
SD
S
GS
nS
µC
T = 25°C, I = 26A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 50V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.83
—
thJC
thCS
°C/W
R
Junction-to-Ambient
48
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHM7250SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
100K Rads (Si)
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
200
2.0
—
—
4.5
V
= 0V, I = 1.0mA
DSS
GS D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
50
V
= 20V
GSS
GS
nA
µA
I
—
V
GS
= -20V
GSS
I
—
V
= 160V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254
Diode Forward Voltage
DS(on)
—
0.10
Ω
V
GS
= 12V, I = 16A
D
R
DS(on)
—
—
0.10
1.9
Ω
V
V
= 12V, I = 16A
D
= 0V, I = 26A
GS
D
GS
V
V
SD
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
Range
(µm)
43
MeV/(mg/cm2)) (MeV)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
28
285
305
200
200
200
200
200
200
200
180
200
140
36.8
39
250
200
150
100
50
Cu
Br
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7250SE
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM 5.0V
BOTTOM 5.0V
100
10
1
5.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
5.0V
°
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
26A
=
I
D
°
T = 25 C
100
10
1
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
5
6
7
8
9
10 11 12 13
-60 -40 -20
0
20 40 60 80 100 120 140 16
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHM7250SE
6000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
D
= 26A
C
= C + C
iss
gs
gd ,
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C
rss
gd
5000
4000
3000
2000
1000
0
C
= C + C
gd
oss
ds
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
80
120
160
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
10ms
°
T = 25 C
J
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
1
0.4
1
10
100
100
0.8
1.2
1.6
2.0
2.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHM7250SE
Pre-Irradiation
RD
30
25
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJC C
DM
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7250SE
1200
1000
800
600
400
200
0
I
D
TOP
12A
16A
15V
BOTTOM 26A
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
A
2V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM7250SE
Footnotes:
Pre-Irradiation
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
= 50V, starting T = 25°C, L= 1.5 mH
GS
DS
DD
J
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 26A, V
= 12V
GS
L
➀➀Total Dose Irradiation with V Bias.
➀➀ I
≤ 26A, di/dt ≤ 400A/µs,
DS
= 0 during
SD
DD
160 volt V
DS
applied and V
V
≤ 200V, T ≤ 150°C
GS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions —TO-254AA
.12
( .005 )
13.84
13.59
(
(
.545
.535
)
)
-B-
6.60
6.32
(
(
.260
.249
)
)
3.78
3.53
(
(
.149
.139
)
)
1.27
1.02
(
(
.050
.040
)
)
-A-
20.32
20.07
(
(
.800
.790
)
)
17.40
16.89
(
(
.685
.665
)
)
13.84
13.59
(
(
.545
.535
)
)
LEG END
1
2
3
-
-
-
COLL
EMIT
GATE
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14
0.89
(
(
.045
.035
)
)
3X
3.81
(
.150
)
3.81
( .150 )
2X
.50
.25
(
(
.020
.010
)
)
M
M
C
C
A
M
B
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
8
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