IRHM7450SEDPBF [INFINEON]
Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;型号: | IRHM7450SEDPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 12A I(D), 500V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 局域网 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:128K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91223C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHM7450SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Product Summary
Part Number
500Volt, 0.51Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under identical pre- and post-irrradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal op-
eration within a few microseconds.Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
BVDSS
RDS(on)
ID
IRHM7450SE
500V
0.51Ω
12A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Electrically Isolated
Ceramic Eyelets
Pre-Irradiation
Absolute Maximum Ratings
Parameter
IRHM7450SE
Units
I
D
@ V
= 12V, T = 25°C Continuous Drain Current
12
GS
C
A
I
D
@ V
= 12V, T = 100°C Continuous Drain Current
C
7.0
GS
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
48
DM
@ T = 25°C
P
151
1.2
W
W/°C
V
D
C
V
±20
500
12
GS
E
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
15
mJ
V/ns
AR
dv/dt
4.2
T
-55 to 150
J
T
Storage Temperature Range
Lead Temperature
oC
STG
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
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1
1/6/99
IRHM7450SE Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
500
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.6
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.5
3.0
—
—
—
—
—
—
—
0.51
0.57
4.5
—
V
= 12V, I = 7.0A
GS D
DS(on)
Ω
V
= 12V, I = 12A
GS
D
V
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 7.0A
DS
DS
I
50
250
V
= 0.8 x Max Rating,V =0V
DSS
DS GS
µ A
—
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
140
35
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
= 12V, I = 12A
GS D
= Max Rating x 0.5
g
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
V
gs
DS
75
gd
d(on)
r
t
t
t
t
35
V
= 250V, I = 12A,
DD D
Rise Time
Turn-Off Delay Time
60
75
R
= 2.35Ω
G
ns
d(off)
f
Fall Time
60
symbol show-
Measured from drainlead,
6mm (0.25 in) from package
tocenterofdie.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET
ingtheinternal inductances.
L
Internal Drain Inductance
—
D
nH
L
Internal Source Inductance
—
8.7
—
S
C
C
C
Input Capacitance
—
—
—
2800
640
250
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
12
48
Modified MOSFET symbol showingtheintegral
reversep-njunctionrectifier.
S
A
Pulse Source Current (Body Diode)
SM
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.6
500
9.6
V
T = 25°C, I = 12A, V
= 0V
j
SD
S
GS
ns
µC
T = 25°C, I = 12A, di/dt ≤ 100A/µs
j
rr
F
V
≤ 50V
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
—
—
—
—
0.21
—
0.83
—
°C/W
Junction-to-Ambient
48
Typical socket mount
2
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Radiation Characteristics
IRHM7450SE Devices
Radiation Performance of Rad Hard HEXFETs
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 105 Rads (Si) the
only parameter limit change is VGSTh minimum .
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability.The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per note
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec ( See Table 2).
bias condition equal to 80% of the de-
5 and a V
DS
vice rated voltage per note 6. Post-irradiation limits
of the devices irradiated to 1 x 105 Rads (Si) are pre-
sented in Table 1, column 1, IRHM7450SE. The val-
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
ues in Table 1 will be met for either of the two low characterization is shown in Table 3.
Table 1. Low Dose Rate ꢀ
IRHM7450SE
Parameter
100K Rads (Si)
Units
Test Conditions
= 0V, I = 1.0mA
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
500
2.0
—
—
4.5
100
-100
50
V
GS
DSS
D
V
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
I
V
= 20V
GSS
GSS
DSS
GS
nA
—
V
= -20V
GS
—
µA
Ω
V
=0.8 x Max Rating, V =0V
DS GS
R
—
0.51
V = 12V, I = 7.0A
GS
D
DS(on)1
On-State Resistance One
V
Diode Forward Voltage
—
1.6
V
T
= 25°C, I = 12A,V
= 0V
GS
SD
C
S
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Parameter
Test Conditions
V
Drain-to-Source Voltage
—
—
400
—
—
400
V
Applied drain-to-source voltage during
gamma-dot
DSS
I
—
—
—
8
15
27
—
—
—
—
—
—
8
3
133
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
A/µsec Rate of rise of photo-current
µH Circuit inductance required to limit di/dt
L
1
Table 3. Single Event Effects
LET (Si)
Fluence
Range
(µm)
V
Bias
(V)
V
Bias
(V)
DS
GS
Ion
(MeV/mg/cm2)
(ions/cm2)
1x 105
Ni
28
~35
400
-5
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3
IRHM7450SE Devices
Pre-Irradiation
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
1
5.0V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 150 C
J
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7
8
9
10 11
12
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
4
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Pre-Irradiation
IRHM7450SE Devices
5000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 12 A
GS
V
V
V
= 400V
= 250V
= 100V
C
= C + C
DS
DS
DS
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
4000
3000
2000
1000
0
oss
ds
gd
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
30
60
90 120
150
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
10ms
1
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.0
0.1
0.4
SD
0.8
1.2
1.6
2.0
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
IRHM7450SE Devices
Pre-Irradiation
RD
12
9
VDS
VGS
12V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7450SE Devices
1200
1000
800
600
400
200
0
I
D
TOP
5.4A
7.6A
BOTTOM 12A
15V
DRIVER
L
V
D S
D.U.T
R
G
+
V
D D
-
I
AS
122V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHM7450SE Devices
Pre-Irradiation
ꢀTotal Dose Irradiation with V
Bias.
GS
= 0 during
Repetitive Rating; Pulse width limited by
maximum junction temperature.
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
Refer to current HEXFET reliability report.
Total Dose Irradiation with V Bias.
DS
(pre-irradiation)
@ Starting T = 25°C,
J
V
= 0.8 rated BV
E
= [0.5 L
(I 2) ], VDD =50V
DS
applied and V
DSS
AS
Peak I = 12A, V
* * L
= 0 during irradiation per
GS
=12 V, 25 ≤ R ≤ 200Ω
L
GS
G
MlL-STD -750, method 1019, condition A.
I
SD
≤ 12A, di/dt ≤ 400A/µs,
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
V
≤ BV
, T ≤ 150°C
DSS J
DD
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
All Pre-Irradiation and Post-Irradiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions — TO-254AA
.12
( .005 )
13.84
13.59
(
(
.545
.535
)
)
-B-
6.60
6.32
(
(
.260
.249
)
)
3.78
3.53
(
(
.149
.139
)
)
1.27
1.02
(
(
.050
.040
)
)
-A-
20.32
20.07
(
(
.800
.790
)
)
17.40
16.89
(
(
.685
.665
)
)
13.84
13.59
(
(
.545
.535
)
)
1
2 3
W
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14
0.89
(
(
.045
.035
)
)
3X
3.81
(
.150
)
3.81
( .150 )
2X
.50
.25
(
(
.020
.010
)
)
M
M
C
C
A
M
B
LEGEND
1- DRAIN
2- SOURCE
3- GATE
LEGEND
1- DRAIN
2- SOURCE
3- GATE
NOTE S:
1. D IM EN SION IN G
&
TO LERANC IN G PER AN SI Y14.5M , 1982.
IN M ILLIM ETERS INCH ES ).
2. ALL DIM ENSIO NS AR E SHO W
N
(
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted,
machined, or have other operations perfomed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 1/99
8
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