IRHMB54Z60PBF [INFINEON]
Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN;
| 型号： | IRHMB54Z60PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 45A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TABLESS TO-254AA, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁ
PD-96973
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB57Z60
30V, N-CHANNEL
TECHNOLOGY
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHMB57Z60 100K Rads (Si) 0.0045Ω 45A*
IRHMB53Z60 300K Rads (Si) 0.0045Ω 45A*
IRHMB54Z60 600K Rads (Si) 0.0045Ω 45A*
IRHMB58Z60 1000K Rads (Si) 0.0045Ω 45A*
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
of low R
and low gate charge reduces the
DS(on)
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Electrically Isolated
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
45*
45*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
180
DM
@ T = 25°C
P
D
208
W
W/°C
V
C
1.67
±20
V
GS
E
Single Pulse Avalanche Energy Á
Avalanche Current À
1250
45
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
20.8
1.08
-55 to 150
mJ
V/ns
AR
dv/dt
T
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/08/05
IRHMB57Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
30
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
—
0.03
—
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
0.0045
Ω
V
= 12V, I = 45A Ã
DS(on)
GS D
2.0
73
—
—
—
—
—
4.0
—
10
25
V
S ( )
V
V
= V , I = 1.0mA
GS(th)
fs
DS
DS
DS
GS
D
Ω
g
= 15V, I
= 45A Ã
DS
I
V
= 24V ,V
= 0V
DSS
GS
µA
—
V
= 24V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
240
60
55
35
175
80
40
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 45A
g
gs
gd
d(on)
r
GS D
V
= 15V
DS
t
t
t
t
V
DD
= 15V, I = 45A
D
V
=12V, R = 2.35Ω
GS G
ns
d(off)
f
L
+ L
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
8884
4334
270
—
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
pF
oss
rss
g
R
0.73
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
—
—
—
45*
180
1.2
140
350
S
SM
SD
rr
A
V
ns
µC
T = 25°C, I = 45A, V
= 0V Ã
j
S
GS
T = 25°C, I = 45A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
—
—
—
—
0.21
—
0.60
—
48
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHMB57Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
30
2.0
—
—
—
—
—
4.0
100
-100
10
30
1.5
—
—
—
—
4.0
100
-100
25
0.0045
V
V
= 0V, I = 1.0mA
DSS
GS D
V
V
= V , I = 1.0mA
GS(th)
GS
DS
D
I
I
V
GS
= 20V
GSS
nA
V
GS
= -20 V
GSS
I
µA
Ω
V
V
= 24V, V
= 0V
GS
DSS
DS
R
DS(on)
0.0040
—
=12V, I = 45A
D
GS
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance (Low-Ohmic TO-254)
R
—
—
0.0045
1.2
—
—
0.0050
1.2
Ω
V
=12V, I = 45A
D
GS
DS(on)
V
SD
Diode Forward Voltage
Ã
V
V
= 0V, I = 45A
GS S
1. Part numbers IRHMB57Z60 , IRHMB53Z60 and IRHMB54Z60
2. Part number IRHMB58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
Energy
(MeV)
261
285
344
Range
MeV/(mg/cm2))
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
I
28
37
60
40
37
33
30
30
25
30
30
25
30
30
20
25
23
15
15
15
8
35
30
25
20
15
10
5
Cu
Br
I
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMB57Z60
Pre-Irradiation
1000
100
10
1000
100
10
VGS
VGS
15V
12V
10V
8.0V
6.0V
5.0V
4.5V
TOP
15V
12V
10V
8.0V
6.0V
5.0V
4.5V
TOP
BOTTOM 4.0V
BOTTOM 4.0V
4.0V
4.0V
1
µ
60 s PULSE WIDTH
Tj = 150°C
µ
60 s PULSE WIDTH
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 45A
D
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
V
= 12V
GS
60µs PULSE WIDTH
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
4
4.5
5
5.5
6
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHMB57Z60
16000
20
16
12
8
f = 1 MHz
V
= 0V,
= C
GS
I
= 45A
C
C
C
+ C , C
SHORTED
D
V
= 24V
iss
gs
gd
ds
DS
14000
12000
10000
8000
6000
4000
2000
0
= C
rss
oss
gd
V
= 15V
DS
= C + C
ds
gd
C
iss
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
40 80 120 160 200 240 280 320
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
Q
DS
G,
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T = 25°C
J
T = 150°C
J
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
10ms
GS
0.1
0
1
10
100
0.0
0.4
0.8
1.2
1.6
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHMB57Z60
Pre-Irradiation
RD
160
120
80
40
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.01
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMB57Z60
4000
3200
2400
1600
800
I
D
TOP
20.1A
28.5A
BOTTOM 45A
15V
DRIVER
+
L
V
DS
.
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V
(BR)DSS
Starting TJ , - Junction Temperature (°C)
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHMB57Z60
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á V
= 25V, starting T = 25°C, L= 1.1 mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = 45A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 45A, di/dt ≤ 150A/µs,
DS
= 0 during
SD
DD
24 volt V
applied and V
V
≤ 30V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
J
Case Outline and Dimensions — Tabless - Low-Ohmic TO-254AA
0.13 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
A
13.84 [.545]
13.59 [.535]
B
1
2
3
C
0.84 [.033]
MAX.
17.40 [.685]
12.95 [.510]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOT ES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2005
8
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